KSC5321

KSC5321 KSC5321 High Voltage and High Reliability • High speed Switching • Wide Safe Operating Area 1 TO-220 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Power Dissipation(TC=25°C) Junction Temperature Storage Temperature Value 800 500 7 5 10 2 4 100 150 - 55 ~ 150 Units V V V A A A A W °C °C * Pulse Test: Pulse Width = 5ms, Duty Cycle≤10% Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Rθja Thermal Resistance Characteristics Junction to Case Junction to Ambient Rating 1.25 62.5 Unit °C/W ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5321 Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Cib tON tSTG tF tON tSTG tF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain bandwidth Product Output Capacitance Input Capacitance Turn ON Time Storage Time Fall Time Turn ON Time Storage Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IC =1mA, IC = 0 VCB = 800V, IE = 0 VEB = 7V, IC = 0 VCE = 5V, IC = 0.6A VCE = 5V, IC = 3A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCE= 10V, IC = 0.6A VCB = 10V, IE = 0, f = 1MHz VEB = 7V, IC = 0, f = 1MHz VCC = 125V, IC = 1A IB1 = -IB2 = 0.2A RL = 125Ω VCC = 250V, IC = 4A IB1 = 0.8A, IB2 = -1.6A RL = 62.5Ω Min. 800 500 7 15 8 Typ. 14 65 1400 Max. 100 10 40 1.0 1.5 100 2000 0.5 6.5 0.3 0.5 3.0 0.3 V V MHz pF pF µs µs µs µs µs µs Units V V V µA µA ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5321 Typical Characteristics 5 IB = 0m 70 A 100 IC[A], COLLECTOR CURRENT 4 3 IB = 200 2 mA hFE, DC CURRENT GAIN 00m A IB = 6 0m A I B = 50 0m A I B = 40 300m A IB = VCE = 5V 10 I B = 100m A 1 0 0 2 4 6 8 10 1 0.01 0.1 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 1000 IC = 5 I B f = 1MHz IE = 0 1 Cob[pF], CAPACITANCE V BE(sat) 100 0.1 V CE(sat) 10 0.01 0.01 1 0.1 1 10 1 10 100 1000 IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 10 100 IC[A], COLLECTOR CURRENT tON, tSTG, tF [µs], TIME tSTG 1 10 Pulse DC 50µ s 0 10 µs s 1m 1 tON 0.1 m 10 tF s 0.1 0.01 0.1 0.01 1 10 1 10 100 1000 IC[A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Switching Time Figure 6. Safe Operating Area ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5321 Typical Characteristics (Continued) 100 120 IB2 = -1A L = 200µ H 100 IC[A], COLLECTOR CURRENT 10 PC[W], POWER DISSIPATION 80 1 60 40 0.1 20 0.01 10 100 1000 10000 0 0 25 50 o 75 100 125 150 175 VCE [V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 7. Reverse Bias Safe Operating Area Figure 8. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5321 Package Demensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 4.50 ±0.20 (8.70) ø3.60 ±0.10 (1.70) 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ DISCLAIMER HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2000 Fairchild Semiconductor International Rev. E