KSC5338D

KSC5338D/KSC5338DW KSC5338D/KSC5338DW D2-PAK High Voltage Power Switch Switching Application • • • • • Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices : TO-220 or D2-PAK B Equivalent Circuit C 1 TO-220 E 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Power Dissipation(TC=25°C) Junction Temperature Storage Temperature Value 1000 450 12 5 10 2 4 75 150 - 55 ~ 150 Units V V V A A A A W °C °C * Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10% Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Rθja TL Thermal Resistance Characteristics Junction to Case Junction to Ambient Maximun Lead Temperature for Soldering Rating 1.65 62.5 270 °C Unit °C/W ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5338D/KSC5338DW Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO ICES ICEO IEBO hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC=1mA, IE=0 IC=5mA, IB=0 IE=1mA, IC=0 VCB=800V, IE=0 VCES=1000V, IEB=0 VCE=450V, IB=0 VEB=10V, IC=0 VCE=1V, IC=0.8A VCE=1V, IC=2A VCE=2.5V, IC=1A VCE(sat) Collector-Emitter Saturation Voltage IC=0.8A, IB=0.08A IC=2A, IB=0.4A IC=0.8A, IB=0.04A IC=1A, IB=0.2A VBE(sat) Base-Emitter Saturation Voltage ICS=0.8A, IB=0.08A IC=2A, IB=0.4A Cib Cob fT VF Input Capacitance Output Capacitance Current Gain Bandwidth Product Diode Forward Voltage TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=125°C VEB=10V, IC=0.5A, f=1MHz VCB=10V, IE=0, f=1MHz IC=0.5A,VCE=10V IF=1A, IC=1mA, IE=0 IF=2A tfr Diode Froward Recvery Time (di/dt=10A/µs) Dynamic Saturation Voltage IF=0.4A IF=1A IF=2A IC=1A, IB1=100mA VCC=300V at 1 µs IC=1A, IB1=100mA VCC=300V at 3 µs IC=2A, IB1=400mA VCC=300V at 1 µs IC=2A, IB1=400mA VCC=300V at 3 µs TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=125°C 15 10 6 4 18 14 25 14 9 6 25 18 0.35 0.55 0.47 0.9 0.9 1.8 0.22 0.3 0.8 0.65 0.9 0.8 550 60 11 0.86 0.79 0.95 0.88 460 360 325 8 15 2.9 8 9 17 1.9 8.5 1.5 1.3 0.5 0.75 0.75 1.1 1.5 2.5 0.5 0.6 1.0 0.9 1.0 0.9 750 100 V V V V V V V V V V V V pF pF MHz V V V V ns ns ns V V V V V V V V TC=25°C TC=125°C TC=25°C TC=125°C Min. 1000 450 12 10 100 500 100 500 10 Typ. Max. Units V V V µA µA µA µA µA µA VCE(DSAT) ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5338D/KSC5338DW Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=40µs) tON tSTG tF tON tSTG tF tON tSTG tF Turn ON Time Storage Time Fall Time Turn ON Time Storage Time Fall Time Turn ON Time Storage Time Fall Time IC=2A, IB1=400mA IB2=1A, VCC=300V RL = 150Ω TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=125°C IC=2.5A, IB1=500mA IB2=5mA, VCC=300V RL = 120Ω TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=125°C INDUCTIVE LOAD SWITCHING (VCC=15V) tSTG tF tC tSTG tF tC tSTG tF tC Storage Time Fall Time Cross-over Time Storage Time Fall Time Cross-over Time Storage Time Fall Time Cross-over Time IC=2.5A, IB1=500mA IB2=0.5A, VZ=350V LC=300µH TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=125°C IC=2A, IB1=400mA IB2=0.4A, VZ=300V LC=200µH TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=125°C IC=1A, IB1=100mA IB2=0.5A, VZ=300V LC=200µH TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=125°C 1.95 2.9 120 270 300 700 0.6 1.0 70 110 80 170 130 0.8 450 150 1.9 2.4 160 330 350 750 2.25 500 200 2.2 µs µs ns ns ns ns µs µs ns ns ns ns µs µs ns ns ns ns 1.8 2.6 110 160 150 IC=2.5A, IB1=500mA IB2=1A, VCC=250V, RL = 100Ω Min Typ. 500 1.2 100 100 150 1.4 1.7 90 150 120 150 2.1 150 150 2.2 Max. 750 1.5 200 150 Units ns µs ns ns ns µs µs ns ns ns ns µs µs ns ns ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5338D/KSC5338DW Typical Characteristics 5 100 IB = 1A IC[A], COLLECTOR CURRENT hFE, DC CURRENT GAIN 4 0.9A 0.8A 0.7A 0.6A 0.5A 0.4A 0.3A 0.2A VCE = 1V Tj = +25 C O Tj = -25 C O 3 10 2 IB = 0.1A Tj = 125 C O 1 IB = 0 0 0 2 4 6 8 10 1 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 100 VCE(sat)[V], COLLECTOR-EMITTER VOLTAGE 10 Tj = +25 C O VCE = 5V IC = 5 IB hFE, DC CURRENT GAIN Tj = -25 C O Tj = 125 C O 10 1 Tj = 125 C O Tj = +25 C O Tj = -25 C 0.1 1E-3 0.01 0.1 1 10 O 1 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation Voltage VCE(sat)[V], COLLECTOR-EMITTER VOLTAGE 10 10 IC = 10IB Tj = 125 C O 1 VBE(sat)[V], BASE-EMITTER VOLTAGE IC = 5 IB 1 Tj = -25 C Tj = 125 C Tj = +25 C O O O Tj = +25 C O Tj = -25 C O 0.1 1E-3 0.01 0.1 1 10 0.1 1E-3 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 5. Collector-Emitter Saturation Voltage Figure 6. Base-Emitter Saturation Voltage ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5338D/KSC5338DW Typical Characteristics (Continued) 10 2000 VBE(sat)[V], BASE-EMITTER VOLTAGE IC = 10IB 1000 f = 1MHz Cob, Cib[pF], CAPACITANCE C ib 1 Tj = -25 C Tj = 125 C Tj = +25 C O O O 100 C ob 0.1 1E-3 10 0.01 0.1 1 10 1 10 100 IC[A], COLLECTOR CURRENT REVERSE VOLTAGE [V] Figure 7. Base-Emitter Saturation Voltage Figure 8. Collector Output Capacitance 500 10 tfr,[nS], FORWARD RECOVERY TIME di/dt = 10A/µS tSTG, tF[nS], SWITCHING TIME 450 T C = 25 C O VCC = 250V IC = 5IB1 = 2.5IB2 tSTG 1 400 350 0.1 tF 300 250 0.25 0.01 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.2 1 10 IF[A], FORWARD CURRENT IC[A], COLLECTOR CURRENT Figure 9. Forward Recovery Time Figure 10. Switching Time 5 2000 IBon = IBoff V CC = 15V V Z = 300V IBon = IBoff V CC = 15V V Z = 300V IC = 2A @ Tj=125 C O tC[nS], CROSSOVER TIME tSTG[µS], STORAGE TIME LC = 200µ H 4 1500 LC = 200µ H IC = 2A @ Tj=125 C O 1000 IC = 1A @ Tj=125 C 3 O O IC = 1A @ Tj=125 C IC = 2A @ Tj=25 C 500 O O IC = 2A @ Tj=25 C IC = 1A @ Tj=25 C 2 0 5 10 15 20 0 2 4 6 8 10 12 14 O IC = 1A @ Tj=25 C 16 18 20 O hFE , FORCED GAIN hFE, FORCED GAIN Figure 11. Induction Storage Time Figure 12. Inductive Crossover Time ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5338D/KSC5338DW Typical Characteristics (Continued) 1000 100 IBon = IBoff V CC = 15V 800 IC = 2A @ Tj=125 C O V Z = 300V LC = 200µ H IC[A], COLLECTOR CURRENT 10 1µS 10µS 5mS 1mS tF[nS], FALL TIME 600 IC = 1A @ Tj=125 C 400 O 1 DC IC = 2A @ Tj=25 C 200 O 0.1 IC = 1A @ Tj=25 C 0 2 4 6 8 10 12 14 16 18 20 0.01 10 100 1000 O hFE, FORCED GAIN VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 13. Inductive Fall Time Figure 14. Safe Operating Area 6 100 T C = 25 C O IC[A], COLLECTOR CURRENT PC[W], POWER DISSIPATION 5 LC = 2mH 75 4 3 50 2 -5V 1 25 -1.5V 0V 0 200 0 300 400 500 600 700 800 900 1000 0 25 50 75 100 125 150 175 VCE [V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE O Figure 15. Reverse Bias Safe Operating Figure 16. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5338D/KSC5338DW Package Demensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 4.50 ±0.20 (8.70) ø3.60 ±0.10 (1.70) 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ DISCLAIMER HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2000 Fairchild Semiconductor International Rev. E