KSC5367

KSC5367 KSC5367 High Voltage and High Reliability • High speed Switching • Wide Safe Operating Area • High Collector Base Voltage 1 TO-220 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current *Base Current (Pulse) Power Dissipation(Tc=25) Junction Temperature Storage Temperature Value 1600 800 12 3 6 2 4 80 150 - 65 ~ 150 Units V V V A A A A W °C °C * Pulse Test: Pulse Width=5ms, Duty Cycle≤10% Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Rθja Thermal Resistance Characteristics Junction to Case Junction to Ambient Rating 1.56 62.5 Unit °C/W ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC5367 Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IC =0.5mA, IC = 0 VCB = 1,600V, IE = 0 VEB = 12V, IC = 0 VCE = 3V, IC = 0.4A VCE = 10V, IC = 5mA IC = 250mA, IB = 25mA IC = 500mA, IB = 50mA IC = 1A, IB= 0.2A IC = 3A, IB = 0.6A IC = 500mA, IB = 50mA VCC = 125V, IC = 0.5A IB1 = 42mA, IB2 = -333mA RL = 250Ω VCC = 250V, IC = 1A IB1 = 0.2A, IB2 = -0.4A RL = 250Ω Min. 1600 800 12 12 8 Typ. 40 0.5 2.2 0.5 0.5 4.0 0.5 Max. 20 20 35 2.5 4.5 2.5 1.5 V V V V pF µs µs µs µs µs µs Units V V V µA µA VBE(sat) Cob tON tSTG tF tON tSTG tF Base-Emitter Saturation Voltage Output Capacitance Turn ON Time Storage Time Fall Time Turn ON Time Storage Time Fall Time ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC5367 Typical Characteristics 5 100 V CE = 5V V CE = 3V IC[A], COLLECTOR CURRENT 4 hFE, DC CURRENT GAIN 10 3 IB = 1.4A IB = 1.2A IB = 1 A IB = 0.8A IB = 0.6A IB = 0.4A 10 2 IB = 0.2A 1 1 0 0 2 4 6 8 0.1 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 10 IC = 10IB tSTG V CC=250V IC=5IB1=-2.5IB1 1 tON[µs], tSTG[µ s], tF[µ s], TIME V BE(sat) 1 tF tON 0.1 VCE(sat) 0.1 0.01 0.01 0.1 1 10 0.01 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Switching Time 10 IC[A], COLLECTOR CURRENT tON[µs], tSTG[µs], tF[µs], TIME VCC=125V IC=0.5A IB1=42mA tSTG 1 10 PULSE DC 1ms 100 µ s 1 5ms tON tF 0.1 0.1 0.01 0.01 0.01 1E-3 0.1 1 10 1 10 100 1000 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR EMITTER VOLTAGE Figure 5. Switching Time Figure 6. Safe Operating Area ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC5367 Typical Characteristics (Continued) 10 100 IB2=200mA IC[A], COLLECTOR CURRENT L=200µ H 90 PC[W], POWER DISSIPATION 1000 10000 80 70 60 50 40 30 20 10 1 0.1 0.01 100 0 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 7. Reverse Bias Safe Operating Area Figure 8. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC5367 Package Demensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 4.50 ±0.20 (8.70) ø3.60 ±0.10 (1.70) 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2001 Fairchild Semiconductor Corporation Rev. H3