KSH45H11

KSH45H11 KSH45H11 General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications • • • • • Lead Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular KSE45H Fast Switching Speeds Low Collector Emitter Saturation Voltage 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value - 80 -5 -8 - 16 20 1.75 150 - 55 ~ 150 Units V V A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) ICEO IEBO hFE VCE(sat) VBE(on) fT Cob tON tSTG tF Parameter Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Collector Capacitance Turn On Time Storage Time Fall Time Test Condition IC = - 30mA, IB = 0 VCE = - 80V, IB = 0 VBE = - 5V, IC = 0 VCE = - 1V, IC = - 2A VCE = - 1V, IC = - 4A IC = - 8A, IB = - 0.4A IC = - 8A, IB = - 0.8A VCE= - 10A, IC = - 0.5A VCB = - 10V, f = 1MHz I C = - 5A IB1= - IB2 = - 0.5A 40 230 135 500 100 60 40 -1 - 1.5 V V MHz pF ns ns ns Min. - 80 Typ. Max. - 10 - 50 Units V µA µA * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002 KSH45H11 Typical Characteristics 1000 -100 VCE = -1V IC[A], COLLECTOR CURRENT ICP (max) -10 10 hFE, DC CURRENT GAIN 100 IC(max) DC 50 0µ 1m 5m s 0µ s s s -1 10 -0.1 1 -0.01 -0.01 -0.1 -1 -10 -1 -10 -100 -1000 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. DC current Gain Figure 2. Safe Operating Area 25 PC[W], POWER DISSIPATION 20 15 10 5 0 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE Figure 3. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002 KSH45H11 Package Dimensions D-PAK 6.60 ±0.20 5.34 ±0.30 (0.50) (4.34) (0.50) 0.70 ±0.20 2.30 ±0.10 0.50 ±0.10 0.60 ±0.20 6.10 ±0.20 2.70 ±0.20 9.50 ±0.30 0.91 ±0.10 0.80 ±0.20 MAX0.96 2.30TYP [2.30±0.20] 0.76 ±0.10 2.30TYP [2.30±0.20] 0.89 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30 ±0.20 (0.70) (0.90) (0.10) (3.05) 6.10 ±0.20 9.50 ±0.30 2.70 ±0.20 (2XR0.25) 0.76 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002 (1.00) 6.60 ±0.20 (5.34) (5.04) (1.50) MIN0.55 KSH45H11 Package Dimensions (Continued) I-PAK 6.60 ±0.20 5.34 ±0.20 (0.50) (4.34) (0.50) 0.50 ±0.10 2.30 ±0.20 ±0.20 ±0.20 0.60 0.70 ±0.10 6.10 ±0.20 0.80 ±0.20 1.80 MAX0.96 0.76 ±0.10 9.30 ±0.30 2.30TYP [2.30±0.20] 2.30TYP [2.30±0.20] 0.50 ±0.10 ©2002 Fairchild Semiconductor Corporation 16.10 ±0.30 Dimensions in Millimeters Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1