MMBTH11

MPSH11 / MMBTH11 Discrete POWER & Signal Technologies MPSH11 MMBTH11 C E C BE TO-92 SOT-23 Mark: 3G B NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 25 30 3.0 50 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSH11 350 2.8 125 357 Max *MMBTH11 225 1.8 556 Units mW mW/ °C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ©1997 Fairchild Semiconductor Corporation MPSH11 / MMBTH11 NPN RF Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Sustaining Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current I C = 1.0 mA, IB = 0 I C = 100 µA, I E = 0 I E = 10 µA, I C = 0 VCB = 25 V, IE = 0 VEB = 2.0 V, IC = 0 25 30 3.0 100 100 V V V nA nA ON CHARACTERISTICS hFE VCE(sat ) VBE( on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage I C = 4.0 mA, VCE = 10 V I C = 4.0 mA, IB = 0.4 mA I C = 4.0 mA, VCE = 10 V 60 0.5 0.95 V V SMALL SIGNAL CHARACTERISTICS fT Ccb Crb rb’Cc Current Gain - Bandwidth Product Collector-Base Capacitance Collector Base Time Constant I C = 4.0 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz I C = 4.0 mA, VCB = 10 V, f = 31.8 MHz 650 0.7 0.6 0.9 9.0 MHz pF pF pS Common-Base Feedback Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% DC Typical Characteristics 300 VCE = 5V 250 1 25 ºC VCESAT- COLLECTOR-EMITTER VOLTAGE (V) DC Current Gain vs Collector Current h FE - DC PULSED CURRENT GAIN Collector-Emitter Saturation Voltage vs Collector Current 0.2 β = 10 0.15 125 ºC 200 150 100 50 0 0.01 0.1 1 10 I C- COLLECTOR CURRENT (mA) P4 25 °C 0.1 25 °C - 4 0 ºC 0.05 - 40 ºC 100 0.1 1 10 I C - COLLECTOR CURRENT (mA) P4 20 30 MPSH11 / MMBTH11 NPN RF Transistor (continued) DC Typical Characteristics Base-Emitter Saturation Voltage vs Collector Current 1 0.8 0.6 0.4 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) P 47 (continued) VBE(ON) BASE-EMITTER ON VOLTAGE (V) - VBESAT- BASE-EMITTER VOLTAGE (V) Base-Emitter ON Voltage vs Collector Current 1 - 40 ºC - 40 ºC 25 °C 125 ºC 0.8 25 °C 0.6 125 ºC β = 10 0.4 V CE = 5V 0.1 1 10 I C - COLLECTOR CURRENT (mA) P4 20 30 0.2 0.01 100 Collector-Cutoff Current vs Ambient Temperature ICBO- COLLECTOR CURRENT (nA) 10 VCB= 30V 1 0.1 25 50 75 100 125 T A - AMBIENT TEMPERATURE ( º C) P4 150 AC Typical Characteristics Capacitance vs. Reverse Bias Voltage Contours of Constant Gain Bandwidth Product (fT) MPSH11 / MMBTH11 NPN RF Transistor (continued) Common Emitter Y Parameters Input Admittance vs. Collector Current Input Admittance vs. Collector Current Input Admittance vs. Collector Voltage Input Admittance vs. Frequency Forward Transfer Admittance vs. Collector Current Forward Transfer Admittance vs. Collector Current MPSH11 / MMBTH11 NPN RF Transistor (continued) Common Emitter Y Parameters Forward Transfer Admittance vs. Collector Voltage (continued) Forward Transfer Admittance vs. Frequency Reverse Transfer Admittance vs. Collector Current Reverse Transfer Admittance vs. Collector Current Reverse Transfer Admittance vs. Collector Voltage Reverse Transfer Admittance vs. Frequency MPSH11 / MMBTH11 NPN RF Transistor (continued) Common Emitter Y Parameters Output Admittance vs. Collector Current (continued) Output Admittance vs. Collector Current Output Admittance vs. Collector Voltage Output Admittance vs. Frequency Power Gain and Noise Figure vs. Collector Current Conversion Gain vs. Collector Current MPSH11 / MMBTH11 NPN RF Transistor (continued) AC Typical Characteristics POWER DISSIPATION vs AMBIENT TEMPERATURE P D - POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( ° C) 125 150 TO-92 SOT-23 Test Circuits VCC = 12 V 270 Ω 1000 pF 1000 pF L2 RL 100 pF 200 mHz Input 0.8-10 pF L1 RS 200 mHz Output into 50Ω 1000 pF 1000 pF 390 Ω L1 - Ohmite Z-235 RFC L2 - L6 turns No. 14 wire, 1 inch L x 1/4 inch ID tapped 1 1/2 turns from cold side 2.2 K Ω VBB FIGURE 1: Unneutralized 200 MHz PG NF Test Circuit MPSH11 / MMBTH11 NPN RF Transistor (continued) Test Circuits (continued) T1 0.002 µF 50 Ω Input 2.2 K Ω 1/2 W 1000 pF 4.0-30 pF 2KΩ 50 Ω Output 1000 pF 1000 pF 390 Ω 1/2 W 270 Ω 1/2 W R.F. Beads VCC = 12 V VAGC T1 - Q3 Toroid 4:1 ratio 8 turns Pri. 2 turns Sec. } No. 22 wire FIGURE 2: 45 MHz Power Gain Circuit 200 mHz Output into 50Ω RFin 1.1 pF 2.0 pF LOin 245 mHz Output into 50 Ω 47 KΩ L1 - Ohmite RFC Z235 T1 - Primary 5 turns No. 34 wire 1/4 inch diameter. Secondary runs No. 34 wire closer wound over a Q100 core (10.7 mHz). When terminated onm secondary side with 50Ω primary measures 1.5 K, -25 pF. L1 1000 pF 1000 pF 20pF 45 mHz Output into 50Ω 300 pF T1 VBB VCE VCE = 15 V FIGURE 3: 200 MHz Conversion Gain Test Circuit