MPSA64

MPSA64 / MMBTA64 / PZTA64 Discrete POWER & Signal Technologies MPSA64 MMBTA64 C PZTA64 C E C B E C B TO-92 E SOT-23 Mark: 2V B SOT-223 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol VCES VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 30 30 10 1.2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA64 625 5.0 83.3 200 Max *MMBTA64 350 2.8 357 **PZTA64 1,000 8.0 125 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. © 1997 Fairchild Semiconductor Corporation A64, Rev A MPSA64 / MMBTA64 / PZTA64 PNP Darlington Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CES ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 100 µ A, IB = 0 VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 30 100 100 V nA nA ON CHARACTERISTICS* hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage IC = 10 mA, VCE = 5.0 V IC = 100 mA, VCE = 5.0 V IC = 100 mA, IB = 0.1 mA IC = 100 mA, VCE = 5.0 V 10,000 20,000 1.5 2.0 V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 5.0 V, f = 100 MHz 125 MHz *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Typical Characteristics 50 40 30 20 10 0 0.01 - 40 °C V CESAT - COLLECTOR EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN (K) Typical Pulsed Current Gain vs Collector Current VCE = 5V Collector-Emitter Saturation Voltage vs Collector Current 1.6 β = 1000 1.2 - 40 ºC 125 °C 0.8 25 °C 125 ºC 25 °C 0.4 0.1 I C - COLLECTOR CURRENT (A) 1 0 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 MPSA64 / MMBTA64 / PZTA64 PNP Darlington Transistor (continued) Typical Characteristics (continued) VBEON - BASE EMITTER ON VOLTAGE (V) VBESAT- BASE EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 2 β = 1000 - 40 ºC 25 °C 125 ºC Base Emitter ON Voltage vs Collector Current 2 1.6 1.2 125 ºC 1.6 1.2 0.8 0.4 0 0.001 - 40 ºC 25 °C 0.8 0.4 0 0.001 V CE = 5V 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 Collector-Cutoff Current vs. Ambient Temperature ICBO- COLLECTOR CURRENT (nA) 100 V 10 CAPACITANCE (pF) CB Input and Output Capacitance vs Reverse Bias Voltage 16 f = 1.0 MHz 12 = 15V 1 8 C ib 4 C ob 0.1 0.01 25 50 75 100 TA - AMBIENT TEMPERATURE ( º C) 125 0 0.1 1 10 REVERSE VOLTAGE (V) 100 Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) 0.75 SOT-223 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150