SGH15N60RUFD

SGH15N60RUFD IGBT SGH15N60RUFD Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • • • • • Short circuit rated 10us @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 15A High input impedance CO-PAK, IGBT with FRD : trr = 42ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G TO-3P GCE E TC = 25°C unless otherwise noted Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ T C = 2 5° C @ TC = 100°C @ TC = 100°C @ TC = 100°C @ T C = 2 5° C @ TC = 100°C SGH15N60RUFD 600 ± 20 24 15 45 15 160 10 160 64 -55 to +150 -55 to +150 300 Units V V A A A A A us W W °C °C °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.77 0.7 40 Units °C/W °C/W °C/W ©2002 Fairchild Semiconductor Corporation SGH15N60RUFD Rev. A1 SGH15N60RUFD Electrical Characteristics of the IGBT T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 ± 100 V V/°C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 15mA, VCE = VGE IC = 15A, VGE = 15V IC = 24A, VGE = 15V 5.0 --6.0 2.2 2.5 8.5 2.8 -V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---948 101 33 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance --------------10 ----17 33 44 118 320 356 676 20 34 48 212 340 695 1035 -42 7 17 14 --65 200 --950 --70 350 --1450 -60 10 24 -ns ns nS ns uJ uJ uJ ns ns ns ns uJ uJ uJ us nC nC nC nH VCC = 300 V, IC = 15A, RG = 13Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 15A, RG = 13Ω, VGE = 15V, Inductive Load, TC = 125°C @ TC = VCC = 300 V, VGE = 15V 100°C VCE = 300 V, IC = 15A, VGE = 15V Measured 5mm from PKG = 25°C unless otherwise noted Electrical Characteristics of DIODE T Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge C Test Conditions T C = 2 5° C IF = 15A TC = 100°C T C = 2 5° C TC = 100°C IF= 15A, di/dt = 200 A/us T C = 2 5° C TC = 100°C T C = 2 5° C TC = 100°C Min. --------- Typ. 1.4 1.3 42 60 3.5 5.6 80 220 Max. 1.7 -60 -6.0 -180 -- Units V ns A nC ©2002 Fairchild Semiconductor Corporation SGH15N60RUFD Rev. A1 SGH15N60RUFD 50 45 40 Common Emitter T C = 25℃ 20V 45 15V 12V 40 Common Emitter VGE = 15V TC = 25℃ ━━ TC = 125℃ ------ Collector Current, IC [A] 8 35 30 25 20 15 10 5 0 Collector Current, IC [A] 35 30 25 20 15 10 5 0 0 2 4 6 VGE = 10V 1 10 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, V CE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 4.0 24 Common Emitter V GE = 15V Collector - Emitter Voltage, VC E [V] V CC = 3 00V Load Current : peak of square wave 3.5 30A 20 3.0 Load Current [A] 16 2.5 15A 2.0 I C = 8A 1.5 12 8 4 1.0 -50 0 50 100 150 0 Duty cycle : 50% T C = 1 00 ℃ Power Dissipation = 25W 0.1 1 10 100 1000 Case Temperature, T C [℃ ] Frequency [KHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 Common Emitter T C = 25 ℃ 20 Common Emitter T C = 1 25℃ 16 Collector - Emitter Voltage, V C E [V] 16 12 Collector - Emitter Voltage, V CE [V] 12 8 8 30A 4 IC = 7 A 0 15A 30A 4 I C = 7A 0 0 4 8 12 16 20 15A 0 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Gate - Emitter Voltage, V GE [ V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE SGH15N60RUFD Rev. A1 SGH15N60RUFD 1800 1500 Common Emitter VGE = 0V, f = 1MHz T C = 2 5℃ Cies Capacitance [pF] Common Emitter V CC = 300V, V GE = ± 15V IC = 15A T C = 25℃ ━━ T C = 125℃ ------ Ton 1200 Switching Time [ns] 100 Tr 900 Coes 600 Cres 300 0 1 10 10 1 10 100 Collector - Emitter Voltage, VCE [V] Gate Resistance, R G [Ω ] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 1000 Switching Time [ns] Common Emitter V CC = 3 00V, VGE = ± 15V IC = 1 5A T C = 2 5℃ ━━ T C = 1 25℃ ------ Common Emitter V CC = 300V, VGE = ± 15V IC = 15A T C = 2 5℃ ━━ T C = 125 ℃ ------ Switching Loss [uJ] Toff 1000 Eoff Eon Eoff Toff Tf Tf 100 100 1 10 100 1 10 100 Gate Resistance, R G [Ω ] Gate Resistance, RG [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 1000 Common Emitter V GE = ± 15V, RG = 13 Ω T C = 2 5 ℃ ━━ T C = 125 ℃ -----Common Emitter V GE = ± 15V, RG = 13Ω T C = 25 ℃ ━━ T C = 125 ℃ ------ Switching Time [ns] Ton 100 Switching Time [ns] Tr Toff Tf Toff 100 Tf 10 5 10 15 20 25 30 5 10 15 20 25 30 Collector Current, IC [A] Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2002 Fairchild Semiconductor Corporation Fig 12. Turn-Off Characteristics vs. Collector Current SGH15N60RUFD Rev. A1 SGH15N60RUFD 15 Common Emitter V GE = ± 15V, RG = 1 3 Ω T C = 25 ℃ ━━ T C = 1 25 ℃ ------ Gate - Emitter Voltage, VGE [ V ] 12 Common Emitter R L = 20 Ω T C = 25 ℃ VCC = 100 V 300 V Switching Loss [uJ] Eoff 1000 Eoff 9 200 V 6 Eon 3 100 5 10 15 20 25 30 0 0 10 20 30 40 50 Collector Current, IC [A] Gate Charge, Q g [ n C ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 100 IC MAX. (Pulsed) 50us 100us 1㎳ 100 Collector Current, IC [A] 10 DC Operation Collector Current, IC [A] IC MAX. (Continuous) 10 1 Single Nonrepetitive Pulse T C = 25 ℃ Curves must be derated linearly with increase in temperature 0.1 1 10 100 1000 Safe Operating Area VGE = 20V, TC = 100℃ 1 1 10 100 1000 0.1 Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, V CE [ V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics Thermal Response, Zthjc [℃/W] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Pdm t1 single pulse 1E-3 10 -5 t2 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2002 Fairchild Semiconductor Corporation SGH15N60RUFD Rev. A1 SGH15N60RUFD 100 T C = 25℃ ━━ T C = 100℃ ------ 100 VR = 200V IF = 15A TC = 25℃ ━━ TC = 100℃ ------ Reverse Recovery Current, Irr [A] 0 1 2 3 Forward Current, IF [A] 10 10 1 1 100 1000 Forward Voltage Drop, V FM [V] di/dt [A/us] Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current 800 V R = 2 00V IF = 1 5A T C = 2 5 ℃ ━━ T C = 1 00℃ - ----- 120 V R = 2 00V IF = 1 5A T C = 25 ℃ ━━ T C = 1 00 ℃ ------ Stored Recovery Charge, Qr [nC] r Reverce Recovery Time, t r r [ns] 100 600 80 400 60 200 40 0 100 1000 20 100 1000 di/dt [A/us] di/dt [A/us] Fig 20. Stored Charge Fig 21. Reverse Recovery Time ©2002 Fairchild Semiconductor Corporation SGH15N60RUFD Rev. A1 SGH15N60RUFD Package Dimension TO-3P 15.60 ±0.20 3.80 ±0.20 13.60 ±0.20 ø3.20 ±0.10 9.60 ±0.20 4.80 ±0.20 1.50 –0.05 +0.15 12.76 ±0.20 19.90 ±0.20 16.50 ±0.30 3.00 ±0.20 1.00 ±0.20 3.50 ±0.20 2.00 ±0.20 13.90 ±0.20 23.40 ±0.20 18.70 ±0.20 1.40 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 +0.15 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation SGH15N60RUFD Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ SPM™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. H5