SGH20N120RUFD

SGH20N120RUFD IGBT SGH20N120RUFD Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • • • • • Short circuit rated 10µs @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A High input impedance CO-PAK, IGBT with FRD : trr = 80ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G TO-3P GCE E TC = 25°C unless otherwise noted Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ T C = 2 5° C @ TC = 100°C @ TC = 100°C @ TC = 100°C @ T C = 2 5° C @ TC = 100°C SGH20N120RUFD 1200 ± 25 32 20 60 20 120 10 230 92 -55 to +150 -55 to +150 300 Units V V A A A A A µs W W °C °C °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.54 0.84 40 Units °C/W °C/W °C/W ©2002 Fairchild Semiconductor Corporation SGH20N120RUFD Rev. B2 SGH20N120RUFD Electrical Characteristics of the IGBT T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 1mA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1200 ----0.6 ----1 ± 100 V V/°C mA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 20mA, VCE = VGE IC = 20A, VGE = 15V IC = 32A, VGE = 15V 3.5 --5.5 2.3 2.8 7.5 3.0 -V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---2000 170 60 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance --------------10 ----30 60 70 150 1.30 1.30 2.60 30 70 90 200 1.50 2.00 3.50 -95 15 43 14 --130 300 --3.65 --165 400 --5.08 -140 25 65 -ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ µs nC nC nC nH VCC = 600 V, IC = 20A, RG = 15Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 600 V, IC = 20A, RG = 15Ω, VGE = 15V, Inductive Load, TC = 125°C @ TC = VCC = 600 V, VGE = 15V 100°C VCE = 600 V, IC = 20A, VGE = 15V Measured 5mm from PKG = 25°C unless otherwise noted Electrical Characteristics of DIODE T Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge C Test Conditions T C = 2 5° C IF = 20A TC = 100°C T C = 2 5° C TC = 100°C IF = 20A dI/dt = 200 A/µs T C = 2 5° C TC = 100°C T C = 2 5° C TC = 100°C Min. --------- Typ. 2.8 2.5 80 95 8.0 9.5 320 450 Max. 3.5 -110 -10.0 -500 -- Units V ns A nC ©2002 Fairchild Semiconductor Corporation SGH20N120RUFD Rev. B2 SGH20N120RUFD 140 TC = 25℃ 120 20V 17V 15V 100 Common Emitter VGE = 15V TC = 25℃ TC = 125℃ 80 Collector Current, IC [A] Collector Current, IC [A] 100 80 60 40 VGE = 10V 20 0 0 2 4 6 8 10 12V 60 40 20 0 0 2 4 6 8 10 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 3.2 3.0 2.8 2.6 2.4 2.2 2.0 1.8 25 50 75 100 125 150 Common Emitter VGE = 15V 32A 40 VCC = 600V Load Current : peak of square wave 30 Collector - Emitter Voltage, VCE [V] Load Current [A] 20 IC = 20A 10 Duty cycle : 50% T C = 100℃ Power Dissipation = 45W 0 0.1 1 10 100 1000 Case Temperature, TC [℃] Frequency [KHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 Common Emitter T C = 25℃ 20 Common Emitter T C = 125℃ 16 Collector - Emitter Voltage, V E [V] C 16 12 Collector - Emitter Voltage, VCE [V] 12 8 8 40A 4 20A I C = 10A 0 40A 4 20A IC = 10A 0 0 4 8 12 16 20 0 4 8 12 16 20 Gate - Emitter Voltage, V GE [V] Gate - Emitter Voltage, V GE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE SGH20N120RUFD Rev. B2 SGH20N120RUFD 3000 Common Emitter VGE = 0V, f = 1MHz TC = 2 5 ℃ 2500 Capacitance [pF] 2000 Cies Switching Time [ns] Common Emitter VCC = 600V, VGE = ± 15V IC = 20A TC = 25℃ TC = 125℃ 100 tr 1500 td(on) 1000 500 Coes Cres 0 1 10 10 10 100 Collector - Emitter Voltage, VCE [V] Gate Resistance, RG [Ω ] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance Switching Time [ns] Switching Loss [µJ] Common Emitter VCC = 600V, VGE = ± 15V IC = 20A T C = 25℃ T C = 125℃ td(off) Common Emitter VCC = 600V, VGE = ± 15V IC = 20A T C = 25℃ T C = 125℃ Eon Eoff tf 100 Eoff 1000 10 100 10 100 Gate Resistance, RG [Ω ] Gate Resistance, RG [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance Common Emitter VGE = ± 15V, RG = 15Ω TC = 2 5 ℃ TC = 125℃ tr Common Emitter VGE = ± 15V, RG = 15Ω TC = 2 5 ℃ TC = 125℃ Switching Time [ns] Switchig Time [ns] 100 tf 100 td(off) td(on) 10 10 15 20 25 30 35 40 10 15 20 25 30 35 40 Collector Current, IC [A] Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2002 Fairchild Semiconductor Corporation Fig 12. Turn-Off Characteristics vs. Collector Current SGH20N120RUFD Rev. B2 SGH20N120RUFD 16 Gate - Emitter Voltage, VGE [V] Common Emitter VGE = ± 15V, RG = 15Ω TC = 25℃ TC = 125℃ Eoff Eon Eoff 14 12 10 8 6 4 2 0 Common Emitter RL = 30Ω TC = 25℃ 600V Switching Loss [µJ] 400V 1000 VCC = 200V 10 15 20 25 30 35 40 0 20 40 60 80 100 Collector Current, I C [A] Gate Charge, Qg [nC] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 100 IC MAX. (Pulsed) 10 IC MAX. (Continuous) 1ms DC Operation 1 100µ s 50µ s 100 Collector Current, I C [A] Collector Current, I C [A] 10 0.1 Single Nonrepetitive Pulse T C = 25℃ Curves must be derated linearly with increase in temperature 0.1 1 10 100 1000 0.01 1 1 Safe Operating Area VGE = 20V, TC = 100℃ 10 100 1000 Collector - Emitter Voltage, V CE [V] Collector - Emitter Voltage, VCE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA 10 Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.1 0.05 0.01 0.02 0.01 single pulse 1E-3 10 -5 Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2002 Fairchild Semiconductor Corporation SGH20N120RUFD Rev. B2 SGH20N120RUFD 100 25 VR = 200V IF = 20A TC = 2 5 ℃ TC = 100℃ Reverse Recovery Current, Irr [A] 6 20 Forward Current, IF [A] 10 15 10 1 5 T C = 2 5℃ T C = 100℃ 0.1 0 2 4 0 100 500 Forward Voltage Drop, VFM [V] di/dt [A/µs] Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current 1000 VR = 200V IF = 20A T C = 25℃ T C = 100℃ 160 VR = 200V IF = 20A TC = 25℃ TC = 100℃ Stored Recovery Charge, Qrr [nC] 800 Reverse Recovery Time, trr [ns] 500 140 600 120 400 100 200 80 0 100 60 100 500 di/dt [A/µs] di/dt [A/µs] Fig 20. Stored Charge Fig 21. Reverse Recovery Time ©2002 Fairchild Semiconductor Corporation SGH20N120RUFD Rev. B2 SGH20N120RUFD Package Dimension TO-3P (FS PKG CODE AF) 15.60 ±0.20 3.80 ±0.20 13.60 ±0.20 ø3.20 ±0.10 9.60 ±0.20 4.80 ±0.20 1.50 –0.05 +0.15 12.76 ±0.20 19.90 ±0.20 16.50 ±0.30 3.00 ±0.20 1.00 ±0.20 3.50 ±0.20 2.00 ±0.20 13.90 ±0.20 23.40 ±0.20 18.70 ±0.20 1.40 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 +0.15 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation SGH20N120RUFD Rev. B2 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ SMP™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. H5