SGH30N60RUF

SGH30N60RUF IGBT SGH30N60RUF Short Circuit Rated IGBT General Description Fairchild's RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • • • • Short circuit rated 10us @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 30A High input impedance Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G E TC = 25°C unless otherwise noted TO-3P GCE Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) TSC PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ TC = 25°C @ TC = 100°C @ TC =100°C @ T C = 25° C @ TC = 100°C SGH30N60RUF 600 ± 20 48 30 90 10 235 90 -55 to +150 -55 to +150 300 Units V V A A A us W W °C °C °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --Max. 0.53 40 Units °C/W °C/W ©2002 Fairchild Semiconductor Corporation SGH30N60RUF Rev. A1 SGH30N60RUF Electrical Characteristics of the IGBT T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 ± 100 V V/°C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 30mA, VCE = VGE IC = 30A, VGE = 15V IC = 48A, VGE = 15V 5.0 --6.0 2.2 2.5 8.5 2.8 -V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---1970 310 74 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance --------------10 ----30 65 54 138 919 814 1733 34 67 60 281 921 1556 2477 -85 17 39 14 --80 200 --2430 --90 400 --3470 -120 25 55 -ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ us nC nC nC nH VCC = 300 V, IC = 30A, RG = 7Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 30A, RG = 7Ω, VGE = 15V, Inductive Load, TC = 125°C @ TC = VCC = 300 V, VGE = 15V 100°C VCE = 300 V, IC = 30A, VGE = 15V Measured 5mm from PKG ©2002 Fairchild Semiconductor Corporation SGH30N60RUF Rev. A1 SGH30N60RUF 90 80 70 Common Emitter TC = 25℃ 20V 15V 90 80 Common Emitter VGE = 15V T C = 25℃ ━━ T C = 125℃ ------ Collector Current, IC [A] 70 60 50 40 30 20 10 0 Collector Current, IC [A] 60 12V 50 40 30 20 10 0 0 2 4 6 8 VGE = 10V 1 10 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 5 40 Common Emitter V GE = 1 5V 60A 35 30 45A Collector - Emitter Voltage, V C E [V] VCC = 3 00V Load Current : peak of square wave 4 Load Current [A] 3 30A 2 IC = 1 5A 25 20 15 10 1 5 0 -50 0 50 100 150 0 Duty cycle : 50% TC = 1 00℃ Power Dissipation = 45W 0.1 1 10 100 1000 Case Temperature, T C [ ℃ ] Frequency [KHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 Common Emitter T C = 25 ℃ 20 Common Emitter T C = 125 ℃ Collector - Emitter Voltage, VCE [V] 16 Collector - Emitter Voltage, VCE [V] 16 12 12 8 8 60A 4 IC = 15A 0 30A 4 IC = 15A 0 4 8 30A 60A 12 16 20 4 8 12 16 20 Gate - Emitter Voltage, V GE [V] Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE SGH30N60RUF Rev. A1 SGH30N60RUF 3500 3000 2500 2000 1500 1000 Cres 500 0 1 Coes Cies 1000 Common Emitter VGE = 0V, f = 1MHz T C = 2 5℃ Common Emitter VCC = 300V, VGE = ± 15V IC = 30A T C = 25℃ ━━ T C = 125℃ ------ Ton Capacitance [pF] Switching Time [ns] Tr 100 10 10 1 10 100 Collector - Emitter Voltage, V CE [V] Gate Resistance, RG [Ω ] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 1000 Switching Time [ns] Common Emitter V CC = 3 00V, V GE = ± 15V IC = 3 0A T C = 2 5℃ ━━ T C = 1 25℃ -----Toff Toff Tf 10000 Common Emitter V CC = 3 00V, VGE = ± 15V IC = 3 0A T C = 25 ℃ ━━ T C = 1 25 ℃ ------ Switching Loss [uJ] Eon Eoff 1000 Eoff Tf 100 100 1 10 100 1 10 100 Gate Resistance, R G [Ω ] Gate Resistance, R G [ Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 1000 Common Emitter V GE = ± 15V, RG = 7 Ω T C = 25 ℃ ━━ T C = 1 25 ℃ ------ 1000 Common Emitter V GE = ± 15V, RG = 7Ω T C = 2 5℃ ━━ T C = 125℃ -----Ton Switching Time [ns] Switching Time [ns] Toff 100 Tr Tf Toff 100 Tf 10 15 30 45 60 15 30 45 60 Collector Current, IC [A] Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2002 Fairchild Semiconductor Corporation Fig 12. Turn-Off Characteristics vs. Collector Current SGH30N60RUF Rev. A1 SGH30N60RUF 10000 Common Emitter VGE = ± 15V, RG = 7 Ω TC = 2 5℃ ━━ TC = 1 25℃ ------ 15 Common Emitter R L = 10 Ω T C = 25 ℃ V CC = 100 V 3 00 V 2 00 V 9 Switching Loss [uJ] Eoff Eon 1000 Eoff Gate - Emitter Voltage, V [ V ] GE 60 12 6 3 100 15 30 45 0 0 20 40 60 80 100 Collector Current, IC [A] Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 200 100 IC M AX. (Pulsed) 50us IC M AX. (Continuous) 100us 1㎳ 10 DC Operation 100 Collector Current, IC [A] Collector Current, IC [A] 10 1 Single Nonrepetitive Pulse TC = 2 5℃ Curves must be derated linearly with increase in temperature 0.3 1 10 100 1000 0.1 Safe Operating Area VGE = 2 0V, T C = 1 00 ℃ 1 1 10 100 1000 Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, V CE [ V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics Thermal Response, Zthjc [℃/W] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Pdm t1 t2 single pulse 1E-3 10 -5 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2002 Fairchild Semiconductor Corporation SGH30N60RUF Rev. A1 SGH30N60RUF Package Dimension TO-3P 15.60 ±0.20 3.80 ±0.20 13.60 ±0.20 ø3.20 ±0.10 9.60 ±0.20 4.80 ±0.20 1.50 –0.05 +0.15 12.76 ±0.20 19.90 ±0.20 16.50 ±0.30 3.00 ±0.20 1.00 ±0.20 3.50 ±0.20 2.00 ±0.20 13.90 ±0.20 23.40 ±0.20 18.70 ±0.20 1.40 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 +0.15 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation SGH30N60RUF Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ SPM™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. H5