SGL50N60

SGL50N60RUF IGBT SGL50N60RUF Short Circuit Rated IGBT General Description Fairchild's RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • • • • Short circuit rated 10us @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 50A High input impedance Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G TO-264 G C E TC = 25°C unless otherwise noted E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) TSC PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes,1/8” from Case for 5 Seconds @ T C = 2 5° C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C SGL50N60RUF 600 ± 20 80 50 150 10 250 100 -55 to +150 -55 to +150 300 Units V V A A A us W W °C °C °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --Max. 0.5 25 Units °C/W °C/W ©2002 Fairchild Semiconductor Corporation SGL50N60RUF Rev. A1 SGL50N60RUF Electrical Characteristics of the IGBT T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 ± 100 V V/°C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Ic = 50mA, VCE = VGE IC = 50A, VGE = 15V IC = 80A, VGE = 15V 5.0 --6.0 2.2 2.5 8.5 2.8 -V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE=30V, VGE = 0V, f = 1MHz ---3311 399 139 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance --------------10 ----26 89 66 118 1.68 1.03 2.71 28 91 68 261 1.7 2.31 4.01 -145 25 70 18 --100 200 --3.8 --110 400 --5.62 -210 35 100 -ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ us nC nC nC nH VCC = 300 V, IC = 50A, RG = 5.9Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 50A, RG = 5.9Ω, VGE = 15V, Inductive Load, TC = 125°C @ TC = VCC = 300 V, VGE = 15V, 100°C VCE = 300 V, IC = 50A, VGE = 15V Measured 5mm from PKG ©2002 Fairchild Semiconductor Corporation SGL50N60RUF Rev. A1 SGL50N60RUF 140 120 Common Emitter T C = 2 5℃ 20V 15V 140 120 12V Common Emitter VGE = 15V TC = 25℃ ━━ TC = 125℃ ------ Collector Current, IC [A] Collector Current, I C [A] 8 100 80 60 40 20 0 100 80 60 40 20 0 0 2 4 6 VGE = 10V 1 10 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [ V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 5 60 Common Emitter V GE = 1 5V Collector - Emitter Voltage, VC E [V] VCC = 3 00V Load Current : peak of square wave 4 100A 50 Load Current [A] 40 3 50A 2 IC = 3 0A 30 20 1 10 0 -50 0 50 100 150 0 Duty cycle : 50% TC = 1 00℃ Power Dissipation = 70W 1 10 100 1000 Case Temperature, T C [ ℃ ] Frequency [KHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 Common Emitter T C = 2 5℃ 16 20 Common Emitter TC = 125 ℃ 16 Collector - Emitter Voltage, V C E [V] Collector - Emitter Voltage, V CE [V] 12 12 8 8 100A 4 IC = 30A 0 50A 4 IC = 3 0A 0 0 4 8 100A 50A 12 16 20 0 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE SGL50N60RUF Rev. A1 SGL50N60RUF 7000 6000 5000 Cies 4000 3000 Coes 2000 Cres 1000 0 1 Common Emitter VGE = 0V, f = 1MHz T C = 2 5℃ 1000 Common Emitter VCC = 300V, VGE = ± 15V IC = 50A T C = 25℃ ━━ T C = 125℃ ------ Capacitance [pF] Ton Switching Time [ns] Tr 100 10 10 100 Collector - Emitter Voltage, V CE [V] Gate Resistance, RG [Ω ] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 1000 Switching Time [ns] Common Emitter V CC = 300V, V GE = ± 15V IC = 50A T C = 2 5 ℃ ━━ T C = 125 ℃ - ----- 10000 Common Emitter VCC = 3 00V, V GE = ± 15V IC = 5 0A TC = 25℃ ━━ TC = 1 25℃ ------ Toff Toff Eon Switching Loss [uJ] Eoff Tf Eoff 1000 Tf 100 10 100 10 100 Gate Resistance, R G [Ω ] Gate Resistance, R G [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 1000 Common Emitter V GE = ± 15V, RG = 5.9Ω T C = 2 5 ℃ ━━ T C = 125 ℃ - ----- 1000 Switching Time [ns] Switching Time [ns] Ton Tr 100 Toff Tf Toff 100 Tf Common Emitter VGE = ± 15V, RG = 5.9Ω TC = 2 5℃ ━━ TC = 125℃ - ----- 10 10 20 40 60 80 100 10 20 40 60 80 100 Collector Current, IC [A] Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2002 Fairchild Semiconductor Corporation Fig 12. Turn-Off Characteristics vs. Collector Current SGL50N60RUF Rev. A1 SGL50N60RUF 10000 Common Emitter V GE = ± 15V, RG = 5 .9 Ω T C = 25 ℃ ━━ T C = 1 25 ℃ - ----- 15 Common Emitter RL = 6Ω TC = 25℃ VCC = 100 V 300 V Eoff Eon Eoff Gate - Emitter Voltage, V [ V ] GE 12 Switching Loss [uJ] 9 200 V 1000 6 3 100 10 20 40 60 80 100 0 0 30 60 90 120 150 180 Collector Current, IC [A] Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 500 IC MAX. (Pulsed) 100 IC MAX. (Continuous) 1㎳ 10 DC Operation 50us 100us 100 Collector Current, IC [A] Collector Current, IC [A] 10 1 Single Nonrepetitive Pulse T C = 25 ℃ Curves must be derated linearly with increase in temperature 0.3 1 10 100 1000 Safe Operating Area VGE = 20V, TC = 100℃ 1 1 10 100 1000 0.1 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, V CE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics Thermal Response, Zthjc [℃/W] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Pdm t1 t2 single pulse 1E-3 10 -5 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2002 Fairchild Semiconductor Corporation SGL50N60RUF Rev. A1 SGL50N60RUF Package Dimension TO-264 6.00 ±0.20 20.00 ±0.20 (4.00) (8.30) (8.30) (2.00) (1.00) (9.00) (9.00) (11.00) (0.50) 20.00 ±0.20 2.50 ±0.10 1.50 ±0.20 (R1 (7.00) (7.00) 4.90 ±0.20 (1.50) 2.50 ±0.20 (1.50) 3.00 ±0.20 1.00 –0.10 +0.25 (2.00) 20.00 ±0.50 (R 2.0 ø3.3 0 ±0 .20 .00 0) ) (1.50) 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.10 +0.25 2.80 ±0.30 5.00 ±0.20 3.50 ±0.20 (0.15) (1.50) (2.80) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation SGL50N60RUF Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ SPM™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. H5