SSP4N60AS

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) SSP4N60AS BVDSS = 600 V RDS(on) = 2.5 Ω ID = 4 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 oC) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds 2 O 1 O 1 O 3 O o Value 600 4 2.5 1 O Units V A A V mJ A mJ V/ns W W/ C o 16 + 30 _ 262 4 10 3.0 100 0.8 - 55 to +150 o C 300 Thermal Resistance Symbol R θJC R θCS R θJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 1.25 -62.5 o Units C/W Rev. B ©1999 Fairchild Semiconductor Corporation SSP4N60AS Electrical Characteristics (TC=25oC unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min. Typ. Max. Units 600 -2.0 -----------------0.68 ------3.32 545 63 25 14 16 49 22 25 4 11.9 --4.0 100 -100 25 250 2.5 -710 75 30 40 45 110 55 34 --nC ns pF µA Ω Ω V V nA N-CHANNEL POWER MOSFET Test Condition VGS=0V,ID=250µA See Fig 7 VDS=5V,ID=250 µA VGS=30V VGS=-30V VDS=600V VDS=480V,TC=125 C VGS=10V,ID=2A VDS=50V,ID=2A 4 O 4 O o o V/ C ID=250 µA VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=300V,ID=4A, RG=12 Ω See Fig 13 VDS=480V,VGS=10V, ID=4A See Fig 6 & Fig 12 45 OO 45 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O Min. Typ. Max. Units --------350 2.15 4 16 1.4 --A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25oC,IS=4A,VGS=0V TJ=25oC ,IF=4A diF/dt=100A/µ s 4 O O 4 Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O 2 C O L=30mH, I AS=4A, VDD=50V, RG=27Ω, Starting T J =25 oo 3 _ _ _ O ISD < 4A, di/dt < 100A/ µs, V DD < BVDSS , Starting T J =25 C _ 4 O Pulse Test : Pulse Width = 250 µs, Duty Cycle