SSP5N60A

Advanced Power MOSFET FEATURES ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 25 μA (Max.) @ VDS = 600V ! Lower RDS(ON) : 1.81Ω (Typ.) SSP5N60A BVDSS = 600 V RDS(on) = 2.2Ω ID = 4.5 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds ② ① ① ③ ① Value 600 4.5 2.8 18 ±30 331 4.5 11 3.0 110 0.88 - 55 to +150 Units V A A V mJ A mJ V/ns W W/℃ ℃ 300 Thermal Resistance Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 1.14 -62.5 ℃/W Units Rev. A SSP5N60A Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol BVDSS ΔBV/ΔTJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(＂Miller＂) Charge Min. Typ. Max. Units 600 -2.0 -----------------3.72 70 28 15 17 52 24 31 4.1 15.4 -0.66 ------4.0 100 -100 25 250 2.2 -105 40 40 50 120 60 40 --nC ns μA Ω S pF V V/℃ V nA N-CHANNEL POWER MOSFET Test Condition VGS=0V,ID=250μA ID=250μA VGS=30V VGS=-30V VDS=600V VDS=480V,TC=125℃ VGS=10V,ID=2.25A VDS=50V,ID=2.25A ④ ④ See Fig 7 VDS=5V,ID=250μA 625 810 VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=300V,ID=4.5A, RG=11Ω See Fig 13 VDS=480V,VGS=10V, ID=4.5A See Fig 6 & Fig 12 ④ ⑤ ④⑤ Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ① ④ Min. Typ. Max. Units --------360 2.39 4.5 18 1.4 --A V ns μC Test Condition Integral reverse pn-diode in the MOSFET TJ=25℃,IS=4.5A,VGS=0V TJ=25℃,IF=4.5A diF/dt=100A/μs ④ Notes ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=30mH, IAS=4.5A, VDD=50V, RG=25Ω, Starting TJ =25℃ ③ ISD≤4.5A, di/dt≤100A/μs, VDD≤BVDSS , Starting TJ =25℃ ④ Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2% ⑤ Essentially Independent of Operating Temperature N-CHANNEL POWER MOSFET Fig 1. Output Characteristics 11 0 VGS Top : 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V SSP5N60A Fig 2. Transfer Characteristics 11 0 ID , Drain Current [A] ID , Drain Current [A] 10 0 1 0 oC 5 10 0 2 oC 5 @Nts: oe 1 V =0V . GS 2 V =5 V . DS 0 3 2 0 µs P l e T s .5 us et 6 8 1 0 1 0 -1 @Nts: oe 1 2 0 µs P l e T s .5 us et 2 T = 2 oC .C 5 1 -1 0 10 0 11 0 - 5 oC 5 1 -1 0 2 4 VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current 5 Fig 4. Source-Drain Diode Forward Voltage IDR , Reverse Drain Current [A] 11 0 RDS(on) , [ Ω ] Drain-Source On-Resistance 4 V =1 V 0 GS 3 10 0 2 V =2 V 0 GS 1 @ N t : T = 2 oC oe J 5 0 0 2 4 6 8 1 0 1 2 1 0 oC 5 2 oC 5 @Nts: oe 1 V =0V . GS us et 2 2 0 µs P l e T s .5 08 . 10 . 12 . 1 -1 0 04 . 06 . ID , Drain Current [A] VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage 90 0 C =C +C (C =sotd) iss gs gd ds h r e C =C +C oss ds gd C =C rss gd Fig 6. Gate Charge vs. Gate-Source Voltage VGS , Gate-Source Voltage [V] C iss 1 0 V =10V 2 DS V =30V 0 DS V =40V 8 DS Capacitance [pF] 60 0 5 30 0 C oss C rss 00 1 0 1 @Nts: oe 1 V =0V . GS 2 f=1Mz . H @Nts:I =45A oe . D 0 0 5 1 0 1 5 2 0 2 5 3 0 3 5 1 0 VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC] SSP5N60A Fig 7. Breakdown Voltage vs. Temperature 12 . 30 . N-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature BVDSS , (Normalized) Drain-Source Breakdown Voltage 11 . RDS(on) , (Normalized) Drain-Source On-Resistance 25 . 20 . 10 . 15 . 10 . @Nts: oe 1 V =1 V . GS 0 2 I =22 A . D .5 09 . @Nts: oe 1 V =0V . GS 2 I = 2 0 µA .D 5 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 05 . 08 . -5 7 00 . -5 7 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 TJ , Junction Temperature [oC] TJ , Junction Temperature [oC] Fig 9. Max. Safe Operating Area 12 0 Oeaini Ti Ae prto n hs ra i L m t d b R DS(on) s iie y Fig 10. Max. Drain Current vs. Case Temperature 5 ID , Drain Current [A] 11 0 1m 0s 10 0 D C 1 0 µs 0 1m s 1 µs 0 ID , Drain Current [A] 4 3 2 1 -1 0 @Nts: oe 1 T = 2 oC .C 5 2 T = 1 0 oC .J 5 3 Snl Ple . ige us 1 1 -2 0 0 1 0 11 0 12 0 13 0 0 2 5 5 0 7 5 10 0 15 2 10 5 VDS , Drain-Source Voltage [V] Tc , Case Temperature [oC] Fig 11. Thermal Response Thermal Response 100 D=0.5 0.2 10- 1 0.1 0.05 @ Notes : 1. Zθ J C (t)=1.14 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Zθ J C (t) PDM Z JC (t) , 0.02 0.01 single pulse t1 t2 θ 10- 2 - 5 10 10- 4 10- 3 10- 2 10- 1 100 101 t1 , Square Wave Pulse Duration [sec] N-CHANNEL POWER MOSFET Fig 12. Gate Charge Test Circuit & Waveform SSP5N60A * Current Regulator ” 50KΩ 12V 200nF 300nF Same Type as DUT VGS Qg 10V VDS VGS DUT 3mA Qgs Qgd R1 Current Sampling (IG) Resistor R2 Current Sampling (ID) Resistor Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vin RG DUT Vin 10V td(on) t on tr td(off) t off tf 10% Vout VDD ( 0.5 rated VDS ) 90% Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms LL VDS Vary tp to obtain required peak ID BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD tp ID RG DUT 10V tp ID (t) VDS (t) Time SSP5N60A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms N-CHANNEL POWER MOSFET DUT + VDS -- IS L Driver RG VGS Same Type as DUT VGS VDD • dv/dt controlled by “RG” • IS controlled by Duty Factor “D” VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H7