MRF19060

Freescale Semiconductor Technical Data Document Number: MRF19060 Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical CDMA Performance: 1960 MHz, 26 Volts IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 7.5 Watts Power Gain — 12.5 dB Adjacent Channel Power — 885 kHz: - 47 dBc @ 30 kHz BW 1.25 MHz: - 55 dBc @ 12.5 kHz BW 2.25 MHz: - 55 dBc @ 1 MHz BW • Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 60 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. MRF19060LR3 MRF19060LSR3 1930- 1990 MHz, 60 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF19060LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF19060LSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 180 1.03 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 0.97 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 1 (Minimum) M3 (Minimum) © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF19060LR3 MRF19060LSR3 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 μAdc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 500 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Functional Tests (In Freescale Test Fixture, 50 ohm system) Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Pout, 1 dB Compression Point (VDD = 26 Vdc, Pout = 60 W CW, f = 1990 MHz) 1. Part is internally matched both on input and output. Gps 11 12.5 — dB Crss — 2.7 — pF VGS(th) VGS(Q) VDS(on) 2 2.5 — — 3.9 0.27 4 4.5 — V V V V(BR)DSS IDSS IGSS 65 — — — — — — 6 1 Vdc μAdc μAdc Symbol Min Typ Max Unit η 33 36 — % IMD — - 31 - 28 dBc IRL — - 12 — dB P1dB — 60 — W MRF19060LR3 MRF19060LSR3 2 RF Device Data Freescale Semiconductor R4 VGG + + C1 C2 R2 C3 C4 C5 R1 R3 + C6 B2 C7 C8 B3 VDD + Z9 Z10 Z11 RF INPUT Z1 Z2 C10 C9 Z3 Z4 Z5 Z6 Z7 Z8 DUT Z12 Z13 Z14 Z15 Z16 C11 Z17 Z18 RF OUTPUT C12 B2 - B3 C1 C2, C7 C3, C8 C4 C5 C6 C9 C10, C11 C12 R1 R2 R3 R4 Z1 Z2 Z3 Ferrite Beads, Fair Rite, 2743019447 10 μF, 50 V Electrolytic Capacitor, Panasonic #ECEV1HV100R 1000 pF Chip Capacitors, ATC #100B102JCA500X 0.10 μF Chip Capacitors, Kemet #CDR33BX104AKWS 5.1 pF Chip Capacitor, ATC #100B5R1JCA500X 6.2 pF Chip Capacitor, ATC #100B6R2JCA500X 22 μF, 35 V Tantalum Capacitor, SMT, Sprague 0.8 pF - 8.0 pF Variable Capacitor, Johanson Gigatrim 10 pF Chip Capacitors, ATC #100B100JCA500X 0.4 pF - 2.5 pF Variable Capacitor, Johanson Gigatrim 1 kΩ, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″ 560 kΩ, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″ 15 Ω, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″ 10 Ω, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″ 0.580″ x 0.074″ Microstrip 0.100″ x 0.074″ Microstrip 0.384″ x 0.074″ Microstrip Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Board 0.152″ x 0.140″ Microstrip 0.090″ x 0.102″ Microstrip 0.245″ x 0.217″ Microstrip 0.090″ x 0.737″ Microstrip 0.530″ x 0.941″ Microstrip 1.010″ x 0.050″ Microstrip 1.060″ x 0.050″ Microstrip 0.446″ x 1.137″ Microstrip 0.152″ x 0.567″ Microstrip 0.183″ x 0.220″ Microstrip 0.100″ x 0.338″ Microstrip 0.480″ x 0.142″ Microstrip 0.140″ x 0.080″ Microstrip 0.173″ x 0.080″ Microstrip 0.420″ x 0.080″ Microstrip 0.030″ Glass Teflon® Arlon GX - 0300- 55- 22, 2 oz Cu Figure 1. MRF19060L Test Circuit Schematic MRF19060LR3 MRF19060LSR3 RF Device Data Freescale Semiconductor 3 TO GATE BIAS FEEDTHRU C1 C2 R2 R1 R3 C3 C4 C5 R4 C7 C6 B2 B3 C8 TO DRAIN BIAS FEEDTHRU C9 C10 C11 C12 MRF19060 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF19060L Test Circuit Component Layout MRF19060LR3 MRF19060LSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 40 35 30 25 20 15 10 5 0 1900 1920 IRL VDD = 26 Vdc Pout = 60 W (PEP), IDQ = 500 mA Two−Tone Measurement, 100 kHz Tone Spacing Gps IMD η 0 −5 −10 −15 −20 −25 −30 −35 2000 −40 2020 η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 45 VDD = 26 Vdc IDQ = 700 mA, f = 1960 MHz, Channel Spacing (Channel Bandwidth): 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz) 2.25 MHz −60 885 kHz 1.25 MHz Gps CDMA 9 Channels Forward Pilot:0, Paging:1, Traffic:8−13, Sync:32 4 12 8 16 Pout, OUTPUT POWER (WATTS Avg.) CDMA η −70 −80 −90 −100 20 −20 −30 −40 −50 ADJACENT CHANNEL POWER RATIO (dB) IMD, INTERMODULATION DISTORTION (dBc) 40 35 30 25 20 15 10 5 1940 1960 1980 f, FREQUENCY (MHz) Figure 3. Class AB Broadband Circuit Performance Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power −25 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) −30 −35 −40 −45 −50 −55 −60 −65 0.1 10 1.0 Pout, OUTPUT POWER (WATTS) PEP 100 500 mA 700 mA VDD = 26 Vdc f = 1960 MHz Two−Tone Measurement, 100 kHz Tone Spacing 900 mA −20 −30 −40 3rd Order −50 −60 −70 −80 0.1 5th Order 7th Order VDD = 26 Vdc IDQ = 700 mA, f = 1960 MHz Two−Tone Measurement, 100 kHz Tone Spacing 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 5. Intermodulation Distortion versus Output Power Figure 6. Intermodulation Products versus Output Power 14 900 mA G ps , POWER GAIN (dB) 13 700 mA 13.5 Pout = 60 W (PEP), IDQ = 500 mA f = 1960 MHz Two−Tone Measurement, 100 kHz Tone Spacing −22 −24 −26 −28 13 G ps , POWER GAIN (dB) 12 500 mA 12.5 Gps −30 −32 IMD 12 11 VDD = 26 Vdc f = 1960 MHz Two−Tone Measurement, 100 kHz Tone Spacing 1.0 10 100 −34 −36 10 0.1 11.5 22 24 26 28 30 −38 32 Pout, OUTPUT POWER (WATTS) PEP VDD, DRAIN VOLTAGE (VOLTS) Figure 7. Power Gain versus Output Power Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage MRF19060LR3 MRF19060LSR3 RF Device Data Freescale Semiconductor 5 Zo = 2 Ω Zload f = 1930 MHz 1990 MHz 1990 MHz Zsource f = 1930 MHz VDD = 26 V, IDQ = 500 mA, Pout = 60 W PEP f MHz 1930 1960 1990 Zsource Ω 1.65 - j0.67 1.64 - j0.45 1.60 - j0.20 Zload Ω 1.85 + j0.50 1.89 + j0.74 1.96 + j0.94 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF19060LR3 MRF19060LSR3 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M 3 (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF B 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N H (LID) M TA B M ccc M TA M B M S M (INSULATOR) ccc C TA M B M aaa M TA M B M F E A (FLANGE) A T SEATING PLANE CASE 465 - 06 ISSUE G NI - 780 MRF19060LR3 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 4X U (FLANGE) B 1 4X Z (LID) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF (FLANGE) B 2 2X K D bbb M TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C M TA B M M M F T SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE E A (FLANGE) A CASE 465A - 06 ISSUE H NI - 780S MRF19060LSR3 MRF19060LR3 MRF19060LSR3 RF Device Data Freescale Semiconductor 7 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF19060LR3 MRF19060LSR3 8Rev. 9, 5/2006 Document Number: MRF19060 RF Device Data Freescale Semiconductor