MRF6S19060NR1

Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 610 mA, Pout = 12 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 16 dB Drain Efficiency — 26% IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Bandwidth ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 60 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • 200_C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF6S19060NR1 MRF6S19060NBR1 1930- 1990 MHz, 12 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S19060NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6S19060NBR1 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value - 0.5, +68 - 0.5, +12 - 65 to +175 200 Unit Vdc Vdc °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 60 W CW Case Temperature 79°C, 12 W CW Symbol RθJC Value (1,2) 0.84 1.0 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF6S19060NR1 MRF6S19060NBR1 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 610 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2.0 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.5 — pF VGS(th) VGS(Q) VDS(on) 1.5 2 0.2 2.2 2.8 0.3 2.5 4 0.4 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 610 mA, Pout = 12 W Avg., f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps ηD IM3 ACPR IRL 14.5 24.5 — — — 16 26 - 37 - 51 - 12 18.5 — - 35 - 48 - 10 dB % dBc dBc dB MRF6S19060NR1 MRF6S19060NBR1 2 RF Device Data Freescale Semiconductor R1 VBIAS R2 C6 C1 C2 Z6 Z17 RF INPUT R3 Z1 C7 Z2 Z3 Z4 Z5 Z7 Z16 DUT VSUPPLY C9 C10 C11 Z8 Z9 Z10 Z11 Z12 Z13 Z14 C8 Z15 C3 C4 C5 RF OUTPUT VSUPPLY Z1 Z2 Z3 Z4 Z5 Z6 Z7, Z8 Z9 Z10 0.250″ x 0.083″ Microstrip 0.750″ x 0.083″ Microstrip 0.375″ x 0.425″ Microstrip 0.370″ x 0.083″ Microstrip 0.365″ x 1.000″ Microstrip 0.650″ x 0.080″ Microstrip 0.115″ x 1.000″ Microstrip 0.240″ x 1.000″ Microstrip 0.310″ x 0.315″ Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17 PCB 0.225″ x 0.083″ Microstrip 0.325″ x 0.500″ Microstrip 0.450″ x 0.083″ Microstrip 0.300″ x 0.245″ Microstrip 0.195″ x 0.083″ Microstrip 1.150″ x 0.070″ Microstrip 1.150″ x 0.083″ Microstrip Arlon AD250, 0.030″, εr = 2.5 Figure 1. MRF6S19060NR1(NBR1) Test Circuit Schematic Table 6. MRF6S19060NR1(NBR1) Test Circuit Component Designations and Values Part C1 C2, C3, C7, C8, C9 C4, C5, C6, C10, C11 R1 R2 R3 Description 100 nF Chip Capacitor 6.8 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 1 kW Chip Resistor 10 kW Chip Resistor 10 W Chip Resistor Part Number CDR33BX104AKWS 600B6R8BT250XT GRM55DR61H106KA88L Manufacturer Kemet ATC Murata MRF6S19060NR1 MRF6S19060NBR1 RF Device Data Freescale Semiconductor 3 R1 R2 C6 C1 C2 R3 CUT OUT AREA C7 C3 C4 C5 C8 C9 C10 C11 MRF6S19060N/NB Rev. 2 Figure 2. MRF6S19060NR1(NBR1) Test Circuit Component Layout MRF6S19060NR1 MRF6S19060NBR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 16.6 16.5 16.4 Gps, POWER GAIN (dB) 16.3 16.2 16.1 16 15.9 15.8 15.7 ACPR IM3 IRL VDD = 28 Vdc, Pout = 12 W (Avg.) IDQ = 610 mA, 2−Carrier N−CDMA 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) Gps ηD 27 26.5 26 25.5 25 −30 −36 −42 −48 −54 ηD, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) −10 −14 −18 −22 −26 −30 ηD, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) −10 −14 −18 −22 −26 −30 IDQ = 305 mA IRL, INPUT RETURN LOSS (dB) 610 mA IRL, INPUT RETURN LOSS (dB) −60 1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000 f, FREQUENCY (MHz) Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 12 Watts Avg. 16.2 16.1 16 Gps, POWER GAIN (dB) 15.9 15.8 15.7 15.6 15.5 15.4 15.3 ACPR IM3 IRL ηD Gps 38.5 38 37.5 VDD = 28 Vdc, Pout = 24 W (Avg.) IDQ = 610 mA, 2−Carrier N−CDMA 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) 37 36.5 −20 −25 −30 −35 −40 −45 15.2 1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000 f, FREQUENCY (MHz) Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 24 Watts Avg. 18 17 Gps, POWER GAIN (dB) 16 15 14 13 12 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 305 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 915 mA 763 mA 610 mA 458 mA −10 VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing −20 915 mA −30 −40 VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing −50 458 mA 763 mA −60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S19060NR1 MRF6S19060NBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) −10 VDD = 28 Vdc, Pout = 60 W (PEP), IDQ = 610 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz 53 P3dB = 49.503 dBm (89.19 W) Pout, OUTPUT POWER (dBm) 51 49 47 45 43 41 39 23 P1dB = 48.792 dBm (75.72 W) Ideal −20 −30 3rd Order −40 5th Order −50 7th Order Actual VDD = 28 Vdc, IDQ = 610 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 1960 MHz 25 27 29 31 33 35 37 −60 0.1 1 TWO−TONE SPACING (MHz) 10 100 Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 60 VDD = 28 Vdc, IDQ = 610 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 50 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth 40 PAR = 9.8 dB @ 0.01% Probability (CCDF) 30 IM3 20 10 0 1 10 Gps Figure 8. Pulse CW Output Power versus Input Power −10 −30_C 25_C 25_C ηD ACPR −30_C −40 −50 −60 TC = − 30_C 85_C 25_C −70 100 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 19 18 Gps, POWER GAIN (dB) 17 25_C 16 15 14 13 12 1 10 Pout, OUTPUT POWER (WATTS) CW VDD = 28 Vdc IDQ = 610 mA f = 1960 MHz 85_C Gps 85_C ηD −30_C TC = − 30_C 70 60 ηD, DRAIN EFFICIENCY (%) 17 IDQ = 610 mA f = 1960 MHz 16 Gps, POWER GAIN (dB) 50 40 30 20 10 0 100 15 14 16 V VDD = 12 V 12 0 20 40 60 80 100 Pout, OUTPUT POWER (WATTS) CW 20 V 28 V 32 V 13 IM3 (dBc), ACPR (dBc) 24 V 85_C −20 −30_C 85_C 25_C −30 Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S19060NR1 MRF6S19060NBR1 6 Figure 11. Power Gain versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 109 MTTF FACTOR (HOURS x AMPS2) 108 107 106 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 12. MTTF Factor versus Junction Temperature N - CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK−TO−AVERAGE (dB) IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. IM3 Measured in 1.2288 MHz Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB) 0 −10 −20 −30 −40 −50 −60 −70 −80 −90 −100 −7.5 −IM3 in 1.2288 MHz Integrated BW 1.2288 MHz Channel BW +IM3 in 1.2288 MHz Integrated BW −ACPR in 30 kHz Integrated BW +ACPR in 30 kHz Integrated BW Figure 13. 2 - Carrier CCDF N - CDMA −6 −4.5 −3 −1.5 0 1.5 3 4.5 6 7.5 f, FREQUENCY (MHz) Figure 14. 2 - Carrier N - CDMA Spectrum MRF6S19060NR1 MRF6S19060NBR1 RF Device Data Freescale Semiconductor 7 Zo = 10 Ω Zload f = 1990 MHz f = 1930 MHz f = 1990 MHz f = 1930 MHz Zsource VDD = 28 Vdc, IDQ = 610 mA, Pout = 12 W Avg. f MHz 1930 1960 1990 Zsource Ω 4.54 - j7.95 4.33 - j7.74 4.20 - j7.43 Zload Ω 4.15 - j5.58 4.17 - j5.34 4.22 - j5.10 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF6S19060NR1 MRF6S19060NBR1 8 RF Device Data Freescale Semiconductor NOTES MRF6S19060NR1 MRF6S19060NBR1 RF Device Data Freescale Semiconductor 9 NOTES MRF6S19060NR1 MRF6S19060NBR1 10 RF Device Data Freescale Semiconductor NOTES MRF6S19060NR1 MRF6S19060NBR1 RF Device Data Freescale Semiconductor 11 PACKAGE DIMENSIONS B E1 E3 2X A GATE LEAD DRAIN LEAD D1 4X D e 4X aaa M b1 CA D2 c1 H DATUM PLANE ZONE J 2X 2X E F A1 A2 E2 E5 E4 2X A NOTE 7 C SEATING PLANE PIN 5 NOTE 8 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO INCLUDE MOLD MISMATCH AND ARE DETER− MINED AT DATUM PLANE −H−. 5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE “b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 −−− .551 .559 .353 .357 .132 .140 .124 .132 .270 −−− .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 −−− 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 −−− 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10 4 D3 3 MRF6S19060NR1 MRF6S19060NBR1 12 RF Device Data Freescale Semiconductor ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ E5 BOTTOM VIEW 1 2 DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC MRF6S19060NR1 STYLE 1: PIN 1. 2. 3. 4. 5. MRF6S19060NR1 MRF6S19060NBR1 RF Device Data Freescale Semiconductor 13 MRF6S19060NR1 MRF6S19060NBR1 14 RF Device Data Freescale Semiconductor MRF6S19060NR1 MRF6S19060NBR1 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF6S19060NR1 MRF6S19060NBR1 1Rev. 3, 5/2006 6 Document Number: MRF6S19060N RF Device Data Freescale Semiconductor