MRF21180

Freescale Semiconductor Technical Data Document Number: MRF21180 Rev. 6, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. • Typical 2 - Carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 1700 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 - 5 MHz and f2 + 5 MHz. Distortion Products Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 + 10 MHz, Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Output Power — 38 Watts (Avg.) Power Gain — 12.1 dB Efficiency — 22% IM3 — 37.5 dBc ACPR — - 41 dBc • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 170 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency, and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. MRF21180R6 2110 - 2170 MHz, 170 W, 28 V LATERAL N - CHANNEL RF POWER MOSFET CASE 375D - 05, STYLE 1 NI - 1230 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 380 2.17 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 0.46 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 1 (Minimum) M3 (Minimum) © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF21180R6 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics (1) Symbol Min Typ Max Unit Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 μAdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 200 μAdc) Gate Quiescent Voltage (3) (VDS = 28 Vdc, ID = 1700 mAdc) Drain- Source On - Voltage (1) (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (1) (VDS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics (1,2) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) V(BR)DSS IDSS IGSS 65 — — — — — — 10 1 Vdc μAdc μAdc VGS(th) VGS(Q) VDS(on) gfs 2 3 — — — 3.9 0.18 6 4 5 0.22 — Vdc Vdc Vdc S Crss — 3.6 — pF Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. Each carrier has Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Common- Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 1700 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 1700 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 1700 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW @ f1 - 10 MHz and f2 +10 MHz) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 1700 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz BW @ f1 - 5 MHz and f2 +5 MHz.) Input Return Loss (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 1700 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) 1. Each side of device measured separately. 2. Part internally matched both on input and output. 3. Measurement made with device in push - pull configuration. (continued) Gps 11 12.1 — dB η 19 22 — % IM3 — - 37.5 - 35 dBc ACPR — - 41 - 39 dBc IRL — - 12 -9 dB MRF21180R6 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Functional Tests (1) Symbol Min Typ Max Unit (In Freescale Test Fixture, 50 ohm system) (continued) Gps — 12 — dB Two - Tone Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 170 W, IDQ = 1700 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 170 W, IDQ = 1700 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Two - Tone Intermodulation Distortion (VDD = 28 Vdc, Pout = 170 W, IDQ = 1700 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Two - Tone Input Return Loss (VDD = 28 Vdc, Pout = 170 W, IDQ = 1700 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Pout, 1 dB Compression Point (VDD = 28 Vdc, IDQ = 1700 mA, f = 2170 MHz) 1. Measurement made with device in push - pull configuration. η — 33 — % IMD — - 30 — dBc IRL — - 12 — dB P1dB — 180 — W MRF21180R6 RF Device Data Freescale Semiconductor 3 VGG R1 + C23 C15 R3 + B1 Z13 C11 C5 Z9 Z11 Z15 C4 Z17 C8 C9 C14 C18 + C19 + C21 VDD RF INPUT Z1 Z2 Z3 C1 Z5 Z7 R5 DUT Z19 Z20 RF OUTPUT Z4 C2 Z6 Z8 VGG R2 + C24 C16 R4 B2 Z10 Z12 Z16 C3 Z18 Z14 VDD + C7 C10 C13 C17 + C20 + C22 C12 C6 Figure 1. MRF21180 Test Circuit Schematic Table 5. MRF21180 Test Circuit Component Designations and Values Part B1, B2 C1, C2, C3, C4 C5, C6, C7, C8 C9, C10 C11, C12, C13, C14 C15, C16, C17, C18 C19, C20 C21, C22, C23, C24 N1, N2 R1, R2, R3, R4 R5 Z1, Z20 Z2, Z19 Z3, Z18 Z4, Z17 Z5, Z6 Z7, Z8 Z9, Z10 Z11, Z12 Z13, Z14 Z15, Z16 WB1, WB2, WB3, WB4 Board PCB Description Short Ferrite Beads 30 pF Chip Capacitors 5.6 pF Chip Capacitors 10 μF Tantalum Capacitors 1000 pF Chip Capacitors 0.1 μF Chip Capacitors 1.0 μF Tantalum Capacitors 22 μF Tantalum Capacitors Type N Flange Mounts 10 Ω, 1/8 W Chip Resistors 1.0 kΩ, 1/8 W Chip Resistor Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Wear Blocks 0.030″ Glass Teflon® Etched Circuit Boards RF-35, εr = 3.50 MRF21180 Rev. 4 Taconic CMR 0.790″ x 0.065″ 0.830″ x 0.112″ 0.145″ x 0.065″ 1.700″ x 0.065″ 0.340″ x 0.065″ 0.455″ x 0.600″ 0.980″ x 0.035″ 0.510″ x 0.645″ 0.770″ x 0.058″ 0.280″ x 0.065″ Part Number 2743019447 100B300JCA500X 100B5R6JCA500X T495X106K035AS4394 100B102JCA500X CDR33BX104AKWS T491C105M050 T491X226K035AS4394 3052-1648-10 Manufacturer Fair Rite ATC ATC Kemet ATC Kemet Kemet Kemet Omni Spectra MRF21180R6 4 RF Device Data Freescale Semiconductor C19 C14 R4 C15C11 B1 R3 C5 C8 C10 C18 C21 C22 C1 R5 WB4 WB3 C4 C2 C3 WB1 WB2 C23 C6 B1 R1 C20 C16 C12 R2 C17 C13 C7 C9 MRF21180 Rev. 4 C24 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF21180 Test Circuit Component Layout MRF21180R6 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 30 25 20 15 Gps 10 IM3 5 0 1 ACPR η 10 Pout, OUTPUT POWER (WATTS Avg.) W−CDMA 50 −55 −60 −50 VDD = 28 Vdc, IDQ = 1700 mA f1 = 2135 MHz, f2 = 2145 MHz 3.84 MHz Channel Bandwidth Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF) −30 IMD, INTERMODULATION DISTORTION (dBc) −35 −40 −45 IM3 (dBc), ACPR (dBc) −25 −30 −35 −40 −45 −50 −55 −60 −65 10 η 7th Order VDD = 28 Vdc, IDQ = 1700 mA f1 = 2135 MHz, f2 = 2145 MHz 100 Pout, OUTPUT POWER (WATTS) PEP 3rd Order 5th Order 15 10 5 220 45 40 η, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB) 35 30 25 20 Figure 3. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) −25 24 22 20 18 16 14 Figure 4. Intermodulation Distortion Products versus Output Power −9 η −14 −19 −24 −29 −34 IM3 12 10 2090 Gps ACPR 2110 2130 2150 2170 −39 −44 2190 IRL −30 −35 IDQ = 1300 mA −40 1500 mA 2100 mA 1900 mA −50 10 1700 mA VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz 100 Pout, OUTPUT POWER (WATTS) PEP 220 VDD = 28 Vdc, Pout = 38 W (Avg.) IDQ = 1700 mA f1 = f − 5 MHz, f2 = f + 5 MHz 2−Carrier W−CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF) −45 f, FREQUENCY (MHz) Figure 5. Intermodulation Distortion versus Output Power 12.5 12 G ps , POWER GAIN (dB) 11.5 11 Gps 48 40 η, DRAIN EFFICIENCY (%) η, DRAIN EFFICIENCY (%) 32 24 16 VDD = 28 Vdc IDQ = 1700 mA f = 2140 MHz 10 Pout, OUTPUT POWER (WATTS) 100 8 0 220 38 η 37 36 35 34 33 32 31 24 IMD Figure 6. 2 - Carrier W - CDMA Broadband Performance −25 −26 −27 −28 −29 −30 Pout = 170 W (PEP) IDQ = 1700 mA f1 = 2135 MHz, f2 = 2145 MHz 25 26 27 28 29 −31 −32 VDD, DRAIN SUPPLY (V) 10.5 10 9.5 1 η Figure 7. CW Performance Figure 8. Two - Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply MRF21180R6 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 12.5 G ps , POWER GAIN (dB) 12.25 12 11.75 11.5 11.25 11 10 IDQ = 2100 mA 1900 mA 1700 mA 1500 mA 1300 mA VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz 100 Pout, OUTPUT POWER (WATTS) PEP 220 Figure 9. Two-Tone Power Gain versus Output Power G ps , POWER GAIN (dB),η, DRAIN EFFICIENCY (%) 35 η 30 IRL 25 VDD = 28 Vdc Pout = 170 W (PEP) IDQ (ICQ) = 1700 mA f1 = f − 5 MHz, f2 = f + 5 MHz −18 −13 −8 20 −23 15 IMD Gps 10 2090 −28 2110 2130 2150 2170 −33 2190 f, FREQUENCY (MHz) Figure 10. Two-Tone Broadband Performance IMD, INTERMODULATION DISTORTION (dBc) −25 −30 −35 −40 −45 −50 −55 0.1 1 Df, TONE SEPARATION (MHz) 10 20 3rd Order VDD = 28 Vdc Pout = 170 W (PEP) IDQ = 1700 mA f1 = 2140 MHz − Df/2, f2 = 2140 MHz + Df/2 5th Order 7th Order +20 +30 0 −10 (dB) −20 −30 −40 −50 −60 −70 3.84 MHz Channel BW −ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW −IM3 in 3.84 MHz BW −15 −10 −5 0 5 10 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) +IM3 in 3.84 MHz BW 15 20 25 −80 −25 −20 f, FREQUENCY (MHz) Figure 11. Intermodulation Distortion Products versus Two - Tone Spacing Figure 12. 2-Carrier W-CDMA Spectrum MRF21180R6 RF Device Data Freescale Semiconductor 7 f = 2170 MHz Zsource f = 2110 MHz f = 2170 MHz Zo = 5 Ω f = 2110 MHz Zload VDD = 28 Vdc, IDQ = 1700 mA, Pout = 38 W Avg. f MHz 2110 2140 2170 Zsource Ω 2.45 + j2.08 2.39 + j2.51 2.16 + j3.14 Zload Ω 2.65 + j1.52 2.71 + j1.80 2.64 + j2.04 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test − Output Matching Network − Z source Z + load Figure 13. Series Equivalent Source and Load Impedance MRF21180R6 8 RF Device Data Freescale Semiconductor NOTES MRF21180R6 RF Device Data Freescale Semiconductor 9 NOTES MRF21180R6 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 2X Q bbb M A A G4 L 1 2 TA M B M B NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.52 (38.61) BASED ON M3 SCREW. DIM A B C D E F G H K L M N Q R S aaa bbb ccc INCHES MIN MAX 1.615 1.625 0.395 0.405 0.150 0.200 0.455 0.465 0.062 0.066 0.004 0.007 1.400 BSC 0.082 0.090 0.117 0.137 0.540 BSC 1.219 1.241 1.218 1.242 0.120 0.130 0.355 0.365 0.365 0.375 0.013 REF 0.010 REF 0.020 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 41.02 41.28 10.03 10.29 3.81 5.08 11.56 11.81 1.57 1.68 0.10 0.18 35.56 BSC 2.08 2.29 2.97 3.48 13.72 BSC 30.96 31.52 30.94 31.55 3.05 3.30 9.01 9.27 9.27 9.53 0.33 REF 0.25 REF 0.51 REF 3 4X 4 K aaa M 4X (FLANGE) B D TA M B M ccc ccc M M TA (LID) M B M TA N (LID) M B M R H C F E PIN 5 M (INSULATOR) bbb M T SEATING PLANE (INSULATOR) S bbb M TA M B M TA M B M STYLE 1: PIN 1. 2. 3. 4. 5. CASE 375D - 05 ISSUE E NI - 1230 MRF21180R6 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF21180R6 1Rev. 6, 5/2006 2 Document Number: MRF21180 RF Device Data Freescale Semiconductor