MRF6S18140HR3

Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 0, 9/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 29 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 16 dB Drain Efficiency — 27.5% IM3 @ 2.5 MHz Offset — - 36 dBc in 1.2288 MHz Bandwidth ACPR @ 885 kHz Offset — - 50.5 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 1840 MHz, 140 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6S18140HR3 MRF6S18140HSR3 1805 - 1880 MHz, 29 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF6S18140HR3 CASE 465C - 02, STYLE 1 NI - 880S MRF6S18140HSR3 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value - 0.5, +68 - 0.5, +12 - 65 to +150 150 225 Unit Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 140 W CW Case Temperature 73°C, 29 W CW Symbol RθJC Value (2,3) 0.31 0.35 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF6S18140HR3 MRF6S18140HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss Coss — — 2.2 685 — — pF pF VGS(th) VGS(Q) VDS(on) 1.2 2 0.1 2 2.7 0.22 2.7 3.8 0.3 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 29 W Avg., f1 = 1805 MHz, f2 = 1807.5 MHz and f1 = 1877.5 MHz, f2 = 1880 MHz, 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. Gps ηD IM3 ACPR IRL 15 25.5 — — — 16 27.5 - 36 - 50.5 - 10.5 18 — - 34.5 - 48 — dB % dBc dBc dB MRF6S18140HR3 MRF6S18140HSR3 2 RF Device Data Freescale Semiconductor VSUPPLY + R3 VBIAS + C8 R5 C4 R1 C6 Z18 RF INPUT Z14 Z1 Z2 Z3 Z4 Z5 Z6 C1 R4 + C9 R6 C5 B2 R2 C7 C3 Z15 C11 C14 C15 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z17 DUT C2 Z16 Z19 Z20 Z21 Z22 RF OUTPUT Z23 B1 C10 C12 C13 C16 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 0.166″ 0.250″ 0.140″ 0.092″ 0.130″ 0.109″ 0.070″ 0.350″ 0.092″ 0.720″ 0.090″ 0.342″ x 0.082″ x 0.334″ x 0.340″ x 0.164″ x 0.234″ x 0.082″ x 0.082″ x 0.644″ x 0.420″ x 0.082″ x 0.485″ x 1.070″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip x 0.580″ Taper Microstrip Z13 Z14 Z15 Z16 Z17 Z18 Z19 Z20 Z21 Z22 Z23 PCB 0.108″ x 1.070″ Microstrip 0.960″ x 0.046″ Microstrip 0.084″ x 0.046″ Microstrip 0.996″ x 0.080″ Microstrip 1.015″ x 0.080″ Microstrip 0.099″ x 1.070″ Microstrip 0.516″ x 1.070″ Microstrip 0.292″ x 0.288″ Microstrip 0.198″ x 0.114″ Microstrip 0.372″ x 0.080″ Microstrip 1.181″ x 0.080″ Microstrip DS Electronics GX0300, 0.030″, εr = 2.55 Figure 1. MRF6S18140HR3(HSR3) Test Circuit Schematic Table 5. MRF6S18140HR3(HSR3) Test Circuit Component Designations and Values Part B1, B2 C1, C2 C3 C4, C5, C12, C13, C14, C15 C6, C7, C10, C11 C8, C9 C16 R1, R2 R3, R4 R5, R6 Description 47 Ω, 100 MHz Small Ferrite Beads, Surface Mount 39 pF Chip Capacitors 0.1 pF Chip Capacitor 10 μF, 50 V Chip Capacitors 9.1 pF Chip Capacitors 47 μF, 50 V Electrolytic Capacitors 470 μF, 63 V Electrolytic Capacitor 12 Ω, 1/8 W Resistors 1.0 KΩ, 1/8 W Resistors 560 KΩ, 1/8 W Chip Resistors Part Number 2743019447 700B390FW500XT 100B0R1BP500X GRM55DR61H106KA88B 600B9R1BT250XT MVK50VC47RM8X10TP NACZF471M63V CRCW120612R0F100 CRCW12061001F100 CRCW12065602F101 Manufacturer Fair - Rite ATC ATC Murata ATC United Chemi - Con Nippon Chemi - Con Dale/Vishay Dale/Vishay Dale/Vishay MRF6S18140HR3 MRF6S18140HSR3 RF Device Data Freescale Semiconductor 3 C10 R3 C8 + B1 R1 C6 C12 C13 C16 R5 C4 C1 C2 R6 C5 R4 B2 R2 C7 C11 CUT OUT AREA + C9 C3 C14 C15 MRF6S18140H/HS Rev. 1 Figure 2. MRF6S18140HR3(HSR3) Test Circuit Component Layout MRF6S18140HR3 MRF6S18140HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS ηD, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) 0 −4 −8 −12 −16 −20 ηD, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) 0 −4 −8 −12 −16 −20 1800 mA IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) 16.8 16.6 16.4 Gps, POWER GAIN (dB) 16.2 16 15.8 15.6 15.4 15.2 15 14.8 1760 ACPR 1780 1800 1820 1840 1860 1880 1900 IRL Gps VDD = 28 Vdc, Pout = 29 W (Avg.) IDQ = 1200 mA, 2−Carrier N−CDMA 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) IM3 ηD 30 29 28 27 26 −24 −30 −36 −42 −48 −54 1920 f, FREQUENCY (MHz) Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 29 Watts Avg. 16.4 16.2 16 Gps, POWER GAIN (dB) 15.8 15.6 15.4 15.2 15 14.8 14.6 14.4 1760 ACPR 1780 1800 1820 1840 1860 1880 1900 IM3 IRL Gps VDD = 28 Vdc, Pout = 60 W (Avg.) IDQ = 1200 mA, 2−Carrier N−CDMA 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) ηD 42 41 40 39 38 −12 −18 −24 −30 −36 −42 1920 f, FREQUENCY (MHz) Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 60 Watts Avg. 19 18 Gps, POWER GAIN (dB) 17 16 900 mA 15 14 600 mA 13 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP VDD = 28 Vdc f1 = 1838.75 MHz, f2 = 1841.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing IDQ = 1800 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) −10 VDD = 28 Vdc f1 = 1838.75 MHz, f2 = 1841.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing −20 1500 mA 1200 mA −30 IDQ = 600 mA −40 −50 900 mA −60 1 10 1200 mA 1500 mA 100 400 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S18140HR3 MRF6S18140HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) −10 −20 −30 3rd Order −40 −50 −60 −70 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP 7th Order 5th Order VDD = 28 Vdc, IDQ = 1200 mA f1 = 1838.75 MHz, f2 = 1841.25 MHz Two−Tone Measurements −5 −10 −15 −20 −25 −30 −35 −40 −45 −50 −55 1 10 TWO−TONE SPACING (MHz) IM5−U IM5−L IM7−L IM7−U 100 IM3−U IM3−L VDD = 28 Vdc, Pout = 140 W (PEP), IDQ = 1200 mA Two−Tone Measurements, (f1 + f2)/2 = Center Frequency of 1840 MHz Figure 7. Intermodulation Distortion Products versus Output Power 60 59 Pout, OUTPUT POWER (dBm) 58 57 56 55 P1dB = 52.6 dBm (182.64 W) 54 53 52 51 50 49 32 33 34 35 36 37 38 39 P3dB = 53.36 dBm (216.77 W) Figure 8. Intermodulation Distortion Products versus Tone Spacing Ideal P6dB = 53.90 dBm (245.47 W) Actual VDD = 28 Vdc, IDQ = 1200 mA Pulsed CW, 12 μsec(on), 1% Duty Cycle f = 1840 MHz 40 41 42 43 44 Pin, INPUT POWER (dBm) Figure 9. Pulsed CW Output Power versus Input Power ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 50 45 40 35 30 25 20 15 10 5 0 1 10 Pout, OUTPUT POWER (WATTS) CW TC = −30_C ηD ACPR Gps 85_C 25_C VDD = 28 Vdc, IDQ = 1200 mA f1 = 1838.75 MHz, f2 = 1841.25 MHz 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB IM3 @ 0.01% Probability (CCDF) −30_C 25_C 85_C −20 −25 −30 IM3 (dBc), ACPR (dBc) −35 −40 −45 −50 −55 −60 −65 −70 100 Figure 10. 2 - Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power MRF6S18140HR3 MRF6S18140HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 18 17 16 15 14 13 12 1 ηD Gps TC = −30_C 25_C 85_C −30_C 66 25_C 85_C 55 ηD, DRAIN EFFICIENCY (%) 44 33 22 Gps, POWER GAIN (dB) 17 IDQ = 1200 mA f = 1840 MHz 16 Gps, POWER GAIN (dB) 15 14 VDD = 24 V 28 V 200 32 V 260 VDD = 28 Vdc IDQ = 1200 mA f = 1840 MHz 10 100 11 0 400 13 0 100 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain and Drain Efficiency versus CW Output Power Figure 12. Power Gain versus Output Power 1010 MTTF FACTOR (HOURS X AMPS2) 109 108 107 106 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 13. MTTF Factor versus Junction Temperature MRF6S18140HR3 MRF6S18140HSR3 RF Device Data Freescale Semiconductor 7 100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK−TO−AVERAGE (dB) IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. IM3 Measured in 1.2288 MHz Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB) 0 −10 −20 −30 −40 −50 −60 −70 −80 −90 −100 −7.5 −6 −4.5 −3 −IM3 in 1.2288 MHz Integrated BW 1.2288 MHz Channel BW +IM3 in 1.2288 MHz Integrated BW −ACPR in 30 kHz Integrated BW +ACPR in 30 kHz Integrated BW Figure 14. 2 - Carrier CCDF N - CDMA −1.5 0 1.5 3 4.5 6 7.5 f, FREQUENCY (MHz) Figure 15. 2 - Carrier N - CDMA Spectrum MRF6S18140HR3 MRF6S18140HSR3 8 RF Device Data Freescale Semiconductor f = 1920 MHz Z o = 10 Ω Zload f = 1760 MHz f = 1920 MHz Zsource f = 1760 MHz VDD = 28 Vdc, IDQ = 1200 mA, Pout = 29 W Avg. f MHz 1760 1780 1800 1820 1840 1860 1880 1900 1920 Zsource W 1.454 - j6.703 1.465 - j6.511 1.467 - j6.336 1.448 - j6.193 1.440 - j6.049 1.414 - j5.938 1.377 - j5.827 1.311 - j5.710 1.231 - j5.583 Zload W 1.344 - j2.479 1.338 - j2.299 1.333 - j2.129 1.325 - j1.966 1.308 - j1.801 1.301 - j1.687 1.303 - j1.550 1.301 - j1.419 1.289 - j1.303 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 16. Series Equivalent Source and Load Impedance MRF6S18140HR3 MRF6S18140HSR3 RF Device Data Freescale Semiconductor 9 PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M (FLANGE) 3 B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. DELETED INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF K D TA 2 bbb M M B M M (INSULATOR) R ccc M (LID) M (INSULATOR) M bbb ccc H M TA TA M B B M TA M B S N M M M (LID) aaa C M TA M B DIM A B C D E F G H K M N Q R S aaa bbb ccc F E A (FLANGE) T A SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465B - 03 ISSUE D NI - 880 MRF6S18140H B 1 (FLANGE) B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF K D TA 2 bbb M M B M M (INSULATOR) R ccc M (LID) M (INSULATOR) M bbb ccc H M TA TA M B B M TA TA M B S B N M M M (LID) aaa M M DIM A B C D E F H K M N R S aaa bbb ccc C F E A (FLANGE) STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE T A SEATING PLANE CASE 465C - 02 ISSUE D NI - 880S MRF6S18140HS MRF6S18140HR3 MRF6S18140HSR3 10 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Number 0 Date Sept. 2006 Description • Initial Release of Data Sheet MRF6S18140HR3 MRF6S18140HSR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF6S18140HR3 MRF6S18140HSR3 Rev. 12 0, 9/2006 Document Number: MRF6S18140H RF Device Data Freescale Semiconductor