MRF6S18140HR3_09

Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1.1, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for N-CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica‐ tions. To be used in Class AB for PCN- PCS/cellular radio and WLL applica‐ tions. • Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 29 Watts Avg., f = 1877.5 MHz, IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 16 dB Drain Efficiency — 27.5% IM3 @ 2.5 MHz Offset — -36 dBc in 1.2288 MHz Bandwidth ACPR @ 885 kHz Offset — -50.5 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 1840 MHz, 140 Watts CW Output Power Features • Characterized with Series Equivalent Large-Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6S18140HR3 MRF6S18140HSR3 ARCHIVE INFORMATION CASE 465B-03, STYLE 1 NI-880 MRF6S18140HR3 CASE 465C-02, STYLE 1 NI-880S MRF6S18140HSR3 Table 1. Maximum Ratings Rating Drain-Source Voltage Gate-Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value -0.5, +68 -0.5, +12 -65 to +150 150 225 Unit Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 140 W CW Case Temperature 73°C, 29 W CW Symbol RθJC 0.31 0.35 Value (2,3) Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006, 2008-2009. All rights reserved. MRF6S18140HR3 MRF6S18140HSR3 1 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION 1805-1880 MHz, 29 W AVG., 28 V 2 x N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A115) Charge Device Model (per JESD22-C101) Class 2 (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit ARCHIVE INFORMATION On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 3 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss Coss — — 2.2 685 — — pF pF VGS(th) VGS(Q) VDS(on) 1.2 2 0.1 2 2.7 0.22 2.7 3.8 0.3 Vdc Vdc Vdc Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 29 W Avg., f1 = 1877.5 MHz, f2 = 1880 MHz, 2-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. Gps ηD IM3 ACPR IRL 15 25.5 — — — 16 27.5 -36 -50.5 -10.5 18 — -34.5 -48 — dB % dBc dBc dB MRF6S18140HR3 MRF6S18140HSR3 2 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) VSUPPLY + R3 VBIAS + C8 R5 C4 R1 C6 Z18 RF INPUT Z14 Z1 Z2 Z3 Z4 Z5 Z6 C1 Z15 R4 + B2 R2 C5 C7 C3 C11 C14 C15 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z17 DUT C2 Z16 Z19 Z20 Z21 Z22 RF OUTPUT Z23 B1 C10 C12 C13 C16 ARCHIVE INFORMATION C9 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 0.166″ x 0.082″ Microstrip 0.250″ x 0.334″ Microstrip 0.140″ x 0.340″ Microstrip 0.092″ x 0.164″ Microstrip 0.130″ x 0.234″ Microstrip 0.109″ x 0.082″ Microstrip 0.070″ x 0.082″ Microstrip 0.350″ x 0.644″ Microstrip 0.092″ x 0.420″ Microstrip 0.720″ x 0.082″ Microstrip 0.090″ x 0.485″ x 0.580″ Taper 0.342″ x 1.070″ Microstrip Z13 Z14 Z15 Z16 Z17 Z18 Z19 Z20 Z21 Z22 Z23 PCB 0.108″ x 1.070″ Microstrip 0.960″ x 0.046″ Microstrip 0.084″ x 0.046″ Microstrip 0.996″ x 0.080″ Microstrip 1.015″ x 0.080″ Microstrip 0.099″ x 1.070″ Microstrip 0.516″ x 1.070″ Microstrip 0.292″ x 0.288″ Microstrip 0.198″ x 0.114″ Microstrip 0.372″ x 0.080″ Microstrip 1.181″ x 0.080″ Microstrip DS Electronics GX0300, 0.030″, εr = 2.55 Figure 1. MRF6S18140HR3(HSR3) Test Circuit Schematic Table 5. MRF6S18140HR3(HSR3) Test Circuit Component Designations and Values Part B1, B2 C1, C2 C3 C4, C5, C12, C13, C14, C15 C6, C7, C10, C11 C8, C9 C16 R1, R2 R3, R4 R5, R6 Description 47 Ω, 100 MHz Small Ferrite Beads, Surface Mount 39 pF Chip Capacitors 0.1 pF Chip Capacitor 10 μF, 50 V Chip Capacitors 9.1 pF Chip Capacitors 47 μF, 50 V Electrolytic Capacitors 470 μF, 63 V Electrolytic Capacitor 12 Ω, 1/4 W Resistors 1.0 KΩ, 1/4 W Resistors 560 KΩ, 1/4 W Chip Resistors Part Number 2743019447 ATC700B390FT500XT ATC100B0R1BT500XT GRM55DR61H106KA88B ATC100B9R1BT500XT EMVY500ADA470MF80G EMVY630GTR471MMH0S CRCW120612R0FKEA CRCW12061001FKEA CRCW12065602FKEA Manufacturer Fair-Rite ATC ATC Murata ATC Nippon Chemi-Con Nippon Chemi-Con Vishay Vishay Vishay MRF6S18140HR3 MRF6S18140HSR3 RF Device Data Freescale Semiconductor 3 ARCHIVE INFORMATION R6 C10 R3 C8 + B1 R1 C6 C12 C13 C16 R5 C4 C1 C2 CUT OUT AREA ARCHIVE INFORMATION R6 C5 + C9 R4 B2 MRF6S18140H/HS Rev. 1 R2 C7 C3 C14 C15 C11 Figure 2. MRF6S18140HR3(HSR3) Test Circuit Component Layout MRF6S18140HR3 MRF6S18140HSR3 4 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION TYPICAL CHARACTERISTICS ηD, DRAIN EFFICIENCY (%) 16.8 16.6 16.4 Gps, POWER GAIN (dB) 16.2 16 15.8 15.6 15.4 15.2 15 14.8 1760 ACPR 1780 1800 1820 1840 1860 1880 1900 IRL Gps VDD = 28 Vdc, Pout = 29 W (Avg.) IDQ = 1200 mA, 2-Carrier N-CDMA 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) IM3 ηD 30 29 28 27 26 IM3 (dBc), ACPR (dBc) -24 -30 -36 -42 -48 -54 1920 0 -4 -8 -12 -16 -20 ARCHIVE INFORMATION IRL, INPUT RETURN LOSS (dB) f, FREQUENCY (MHz) Figure 3. 2-Carrier N-CDMA Broadband Performance @ Pout = 29 Watts Avg. 16.4 16.2 16 Gps, POWER GAIN (dB) 15.8 15.6 15.4 15.2 15 14.8 14.6 14.4 1760 IRL ACPR 1780 1800 1820 1840 1860 1880 1900 IM3 Gps VDD = 28 Vdc, Pout = 60 W (Avg.) IDQ = 1200 mA, 2-Carrier N-CDMA 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) ηD 42 41 40 39 38 IM3 (dBc), ACPR (dBc) -12 -18 -24 -30 -36 -42 1920 0 -4 -8 -12 -16 -20 f, FREQUENCY (MHz) Figure 4. 2-Carrier N-CDMA Broadband Performance @ Pout = 60 Watts Avg. 19 18 Gps, POWER GAIN (dB) 17 16 900 mA 15 14 600 mA 13 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP VDD = 28 Vdc f1 = 1838.75 MHz, f2 = 1841.25 MHz Two-Tone Measurements, 2.5 MHz Tone Spacing IDQ = 1800 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -1 0 VDD = 28 Vdc f1 = 1838.75 MHz, f2 = 1841.25 MHz Two-Tone Measurements, 2.5 MHz Tone Spacing -2 0 1500 mA 1200 mA -3 0 IDQ = 600 mA -4 0 1800 mA -5 0 900 mA -60 1 10 1200 mA 1500 mA 100 400 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two-T one Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S18140HR3 MRF6S18140HSR3 RF Device Data Freescale Semiconductor 5 ARCHIVE INFORMATION ηD, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) -10 IMD, INTERMODULATION DISTORTION (dBc) -20 -30 3rd Order -40 -50 -60 -70 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP 7th Order 5th Order VDD = 28 Vdc, IDQ = 1200 mA f1 = 1838.75 MHz, f2 = 1841.25 MHz Two-Tone Measurements 0 -1 0 -2 0 -3 0 -4 0 -5 0 -6 0 TWO-T ONE SPACING (MHz) IM5-U IM5-L IM7-L IM7-U IM3-U IM3-L VDD = 28 Vdc, Pout = 140 W (PEP), IDQ = 1200 mA Two-Tone Measurements, (f1 + f2)/2 = Center Frequency of 1840 MHz ARCHIVE INFORMATION Figure 7. Intermodulation Distortion Products versus Output Power 60 59 58 Pout, OUTPUT POWER (dBm) 57 56 55 P1dB = 52.6 dBm (182.64 W) 54 53 52 51 50 49 32 33 34 35 36 P3dB = 53.36 dBm (216.77 W) P6dB = 53.90 dBm (245.47 W) Figure 8. Intermodulation Distortion Products versus Tone Spacing Ideal Actual VDD = 28 Vdc, IDQ = 1200 mA Pulsed CW, 12 μsec(on), 1% Duty Cycle f = 1840 MHz 37 38 39 40 41 42 43 44 Pin, INPUT POWER (dBm) Figure 9. Pulsed CW Output Power versus Input Power ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 50 45 40 35 30 25 20 15 10 5 0 1 10 Pout, OUTPUT POWER (WATTS) CW TC = -30_C ηD ACPR Gps 85_C 25_C VDD = 28 Vdc, IDQ = 1200 mA f1 = 1838.75 MHz, f2 = 1841.25 MHz 2-Carrier N-CDMA, 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB IM3 @ 0.01% Probability (CCDF) -30 _C -20 -25 -30 IM3 (dBc), ACPR (dBc) -35 -40 -45 -50 -55 -60 -65 -70 100 25_C 85_C Figure 10. 2-Carrier N-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power MRF6S18140HR3 MRF6S18140HSR3 6 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION 1 10 100 TYPICAL CHARACTERISTICS 18 17 Gps, POWER GAIN (dB) 16 15 14 13 12 ηD VDD = 28 Vdc IDQ = 1200 mA f = 1840 MHz 10 100 Gps TC = -30_C 25_C 85_C -30 _C 66 25_C 85_C 55 ηD, DRAIN EFFICIENCY (%) 44 33 22 11 0 400 Gps, POWER GAIN (dB) 16 17 IDQ = 1200 mA f = 1840 MHz 15 14 VDD = 24 V 13 Pout, OUTPUT POWER (WATTS) CW 0 100 28 V 200 32 V 260 ARCHIVE INFORMATION Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain and Drain Efficiency versus CW Output Power 108 Figure 12. Power Gain versus Output Power MTTF (HOURS) 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 29 W Avg., and ηD = 27.5%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 13. MTTF Factor versus Junction Temperature MRF6S18140HR3 MRF6S18140HSR3 RF Device Data Freescale Semiconductor 7 ARCHIVE INFORMATION 1 N-CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. IM3 Measured in 1.2288 MHz Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0 2 4 6 8 10 (dB) 0 -1 0 -2 0 -3 0 -4 0 -5 0 -6 0 -7 0 -8 0 -ACPR in 30 kHz Integrated BW +ACPR in 30 kHz Integrated BW -IM3 in 1.2288 MHz Integrated BW +IM3 in 1.2288 MHz Integrated BW 1.2288 MHz Channel BW ARCHIVE INFORMATION PEAK-T O-A VERAGE (dB) Figure 14. 2-Carrier CCDF N-CDMA -100 -7.5 -6 -4.5 -3 -1.5 0 1.5 3 4.5 6 7.5 f, FREQUENCY (MHz) Figure 15. 2-Carrier N-CDMA Spectrum MRF6S18140HR3 MRF6S18140HSR3 8 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION -9 0 f = 1920 MHz Zo = 10 Ω Zload ARCHIVE INFORMATION f = 1760 MHz f = 1920 MHz Zsource f = 1760 MHz VDD = 28 Vdc, IDQ = 1200 mA, Pout = 29 W Avg. f MHz 1760 1780 1800 1820 1840 1860 1880 1900 1920 Zsource W 1.454 - j6.703 1.465 - j6.511 1.467 - j6.336 1.448 - j6.193 1.440 - j6.049 1.414 - j5.938 1.377 - j5.827 1.311 - j5.710 1.231 - j5.583 Zload W 1.344 - j2.479 1.338 - j2.299 1.333 - j2.129 1.325 - j1.966 1.308 - j1.801 1.301 - j1.687 1.303 - j1.550 1.301 - j1.419 1.289 - j1.303 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 16. Series Equivalent Source and Load Impedance MRF6S18140HR3 MRF6S18140HSR3 RF Device Data Freescale Semiconductor 9 ARCHIVE INFORMATION PACKAGE DIMENSIONS B G 1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. DELETED INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF Q bbb M TA M B M B (FLANGE) 3 K D TA 2 bbb M M B M M (INSULATOR) R ccc M (LID) M (INSULATOR) M bbb M TA TA M B B M TA M B S N (LID) ARCHIVE INFORMATION ccc H M M M aaa M TA M B C F E A A (FLANGE) T SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465B-03 ISSUE D NI-880 MRF6S18140HR3 B 1 B (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF K D TA 2 bbb M M B M M (INSULATOR) R ccc M (LID) M (INSULATOR) M bbb ccc H M TA TA M B B M TA TA M B S B N M M M (LID) aaa M M DIM A B C D E F H K M N R S aaa bbb ccc C F E A A (FLANGE) STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE T SEATING PLANE CASE 465C-02 ISSUE D NI-880S MRF6S18140HSR3 MRF6S18140HR3 MRF6S18140HSR3 10 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION DIM A B C D E F G H K M N Q R S aaa bbb ccc PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date Sept. 2006 Dec. 2008 • Initial Release of Data Sheet • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, p. 1, 2 • Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality is standard, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in Functional Test”, On Characteristics table, p. 2 • Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers, p. 3 • Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamic range, p. 6 • Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 1.1 Dec. 2009 • Corrected data sheet to reflect RF Test Reduction frequency described in Product and Process Change Notification number, PCN13232, p. 1, 2 • Data sheet archived. Part no longer manufactured. Description ARCHIVE INFORMATION 1 MRF6S18140HR3 MRF6S18140HSR3 RF Device Data Freescale Semiconductor 11 ARCHIVE INFORMATION 0 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2008-2009. All rights reserved. MRF6S18140HR3 MRF6S18140HSR3 Document Number: MRF6S18140H 1Rev. 1.1, 12/2009 2 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION