MRF6S19120HSR3

Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 19 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 15 dB Drain Efficiency — 21.5% ACPR @ 885 kHz Offset — - 54 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6S19120HR3 MRF6S19120HSR3 1930 - 1990 MHz, 19 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF6S19120HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF6S19120HSR3 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +68 - 0.5, +12 407 2.3 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 120 W CW Case Temperature 73°C, 19 W CW Symbol RθJC Value (1,2) 0.43 0.45 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF6S19120HR3 MRF6S19120HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 270 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1000 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.7 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2.7 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.95 — pF VGS(th) VGS(Q) VDS(on) gfs 1 2 — — 2 2.8 0.21 6.9 3 4 0.3 — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 19 W Avg. N - CDMA, f = 1990 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps ηD ACPR IRL 14 20 — — 15 21.5 - 54 - 13 17 — - 48 -9 dB % dBc dB MRF6S19120HR3 MRF6S19120HSR3 2 RF Device Data Freescale Semiconductor VBIAS B1 + R1 C9 C5 C7 C4 R2 C3 Z6 RF INPUT Z1 C1 DUT Z2 Z3 Z4 Z5 Z7 Z8 Z9 C2 Z10 C6 C8 + C10 + C11 + C12 + C13 + C14 VSUPPLY RF OUTPUT Z1 Z2 Z3 Z4 Z5 Z6 1.242″ 0.839″ 0.230″ 0.320″ 0.093″ 0.160″ x 0.084″ x 0.084″ x 0.180″ x 1.100″ x 1.100″ x 1.098″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z7 Z8 Z9 Z10 PCB 0.387″ x 1.098″ Microstrip 0.169″ x 0.316″ Microstrip 0.781″ x 0.084″ Microstrip 1.228″ x 0.084″ Microstrip Arlon GX - 0300 - 55 - 22, 0.030″, εr = 2.55 Figure 1. MRF6S19120HR3(SR3) Test Circuit Schematic Table 5. MRF6S19120HR3(SR3) Test Circuit Component Designations and Values Part B1 C1, C2 C3, C4 C5, C6 C7, C8 C9 C10, C11 C12, C13 C14 R1 R2 Short RF Bead 10 pF Chip Capacitors 5.1 pF Chip Capacitors 1.0 nF Chip Capacitors 0.1 μF Chip Capacitors 10 μF, 35 V Tantalum Chip Capacitor 10 μF, 35 V Tantalum Chip Capacitors 22 μF, 50 V Tantalum Chip Capacitors 470 μF, 63 V Electrolytic Capacitor, Radial 560 KW, 1/4 W Chip Resistor (1206) 10 W, 1/4 W Chip Resistor (1206) Description Part Number 2743019447 100B100JP50X 100B5R1CP50X 100B102JP50X C1825C100J5RAC T491X106K035AS GRM55DR61H106KA88L T491C105K022AS MCR63V470M8X11 CRCW1206560F100 CRCW1206010F100 Manufacturer Fair - Rite ATC ATC ATC Kemet Kemet Murata Kemet Multicomp Vishay Vishay MRF6S19120HR3 MRF6S19120HSR3 RF Device Data Freescale Semiconductor 3 C9 C4 B1 R2 C3 C11 C10 C13 C6 C8 R1 C5 C7 C12 C14 C1 C2 CUT OUT AREA MRF6S19120 Rev. 0 Figure 2. MRF6S19120HR3(SR3) Test Circuit Component Layout MRF6S19120HR3 MRF6S19120HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS ηD, DRAIN EFFICIENCY (%) −10 −12 −14 −16 −18 −20 −22 −24 −26 ηD, DRAIN EFFICIENCY (%) −10 −12 −14 −16 −18 −20 −22 −24 −26 1500 mA 750 mA IRL, INPUT RETURN LOSS (dB) ACPR (dBc), ALT1 (dBc) IRL, INPUT RETURN LOSS (dB) ACPR (dBc), ALT1 (dBc) 15.6 15.4 Gps, POWER GAIN (dB) 15.2 15 14.8 IRL 14.6 ACPR 14.4 14.2 ALT1 −55 −60 ηD Gps VDD = 28 Vdc, Pout = 19 W (Avg.), IDQ = 1000 mA Single−Carrier N−CDMA, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) 26 24 22 20 −45 −50 −65 14 1940 1950 1960 1970 1980 1990 2000 2010 2020 2030 2040 f, FREQUENCY (MHz) Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 19 Watts Avg. 15.6 15.4 Gps, POWER GAIN (dB) 15.2 15 14.8 14.6 14.4 14.2 ACPR ALT1 IRL Gps VDD = 28 Vdc, Pout = 32 W (Avg.), IDQ = 1000 mA Single−Carrier N−CDMA, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) 32 ηD 30 28 26 −35 −40 −45 −50 −55 14 1940 1950 1960 1970 1980 1990 2000 2010 2020 2030 2040 f, FREQUENCY (MHz) Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 32 Watts Avg. 17 IDQ = 1500 mA 16 Gps, POWER GAIN (dB) 1250 mA 15 1000 mA 750 mA 14 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) −20 VDD = 28 Vdc −25 f1 = 1988.75 MHz, f2 = 1991.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing −30 IDQ = 500 mA −35 −40 −45 −50 1000 mA −55 0.6 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 300 1250 mA 13 500 mA VDD = 28 Vdc f1 = 1988.75 MHz, f2 = 1991.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing 10 Pout, OUTPUT POWER (WATTS) PEP 100 300 12 0.6 1 Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S19120HR3 MRF6S19120HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) 0 −10 −20 −30 −40 −50 −60 0.1 3rd Order 5th Order VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1000 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 1990 MHz 7th Order 1 10 100 63 62 61 Ideal 60 59 P3dB = 52.64 dBm (183.69 W) 58 57 56 55 P1dB = 51.9 dBm (154.32 W) Actual 54 53 52 51 VDD = 28 Vdc, IDQ = 1000 mA 50 Pulsed CW, 12 μsec(on), 1% Duty Cycle 49 48 f = 1990 MHz 47 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 Pin, INPUT POWER (dBm) TWO−TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Tone Spacing ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 50 40 30 20 10 Pout, OUTPUT POWER (dBm) Figure 8. Pulse CW Output Power versus Input Power −20 ACPR −30 −40 ALT1 −50 −60 25_C 85_C −30_C −70 −80 100 150 ACPR (dBc), ALT1 (dBc) VDD = 28 Vdc, IDQ = 1000 mA f = 1990 MHz, Single−Carrier N−CDMA 1.2288 MHz Channel Bandwidth PAR = 9.8 dB @ 0.01% Probability (CCDF) 25_C 85_C −30_C Gps TC = 25_C ηD 25_C 0 −10 1 10 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power 18 17 Gps, POWER GAIN (dB) 16 15 14 13 12 11 1 10 Pout, OUTPUT POWER (WATTS) CW 100 ηD VDD = 28 Vdc IDQ = 1000 mA f = 1990 MHz TC = −30_C 25_C 85_C Gps 70 25_C 60 85_C 50 40 30 20 10 0 16 15 ηD, DRAIN EFFICIENCY (%) 14 Gps, POWER GAIN (dB) 13 12 11 10 9 8 7 6 0 12 V 50 100 16 V IDQ = 1000 mA f = 1990 MHz 150 200 20 V 24 V 28 V VDD = 32 V −30_C Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S19120HR3 MRF6S19120HSR3 6 Figure 11. Power Gain versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 109 MTTF FACTOR (HOURS X AMPS2) 108 107 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 12. MTTF Factor versus Junction Temperature N - CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK−TO−AVERAGE (dB) IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. ALT1 Measured in 12.5 kHz Bandwidth @ ±1.25 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB) −10 −20 −30 −40 −50 −60 −70 −80 −90 −100 1.2288 MHz Channel BW .... .... . .. .................. ........ . .. . ...... ........ ............. . .. . . . . . +ALT1 in 12.5 kHz . −ALT1 in 12.5 kHz . . . Integrated BW . . Integrated BW . . . . . . . . . . . . .... . . . ............ ........... ...... .... ....... ...... ... .... .. .. . . ....... ... ....... . .... .... . .. . .. ...... ......... ..... .... .. ..... .... .. . .... .. ...... . ... .. ... . . ...... .... .. ... ....... ......... .... . ... ...... ..... ...... .. ........ −ACPR in 30 kHz +ACPR in 30 kHz ........... .. ....... . . ......... ...... .............. ..... .. .... ......... . . ............ . Integrated BW Integrated BW .. ...... ............. ..... ... . .......... .. ... .. ... .. . Figure 13. Single - Carrier CCDF N - CDMA −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 14. Single - Carrier N - CDMA Spectrum MRF6S19120HR3 MRF6S19120HSR3 RF Device Data Freescale Semiconductor 7 f = 2020 MHz Z o = 10 Ω Zload f = 1930 MHz f = 2020 MHz Zsource f = 1930 MHz VDD = 28 Vdc, IDQ = 1000 mA, Pout = 19 W Avg. f MHz 1930 1960 1990 2020 Zsource Ω 3.03 - j5.14 2.94 - j4.54 2.75 - j4.34 2.75 - j4.18 Zload Ω 1.52 - j1.77 1.51 - j1.37 1.38 - j1.20 1.41 - j1.11 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF6S19120HR3 MRF6S19120HSR3 8 RF Device Data Freescale Semiconductor NOTES MRF6S19120HR3 MRF6S19120HSR3 RF Device Data Freescale Semiconductor 9 NOTES MRF6S19120HR3 MRF6S19120HSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF 3 (FLANGE) B 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N H (LID) M TA B M ccc M TA M B M S M (INSULATOR) ccc C TA M B M aaa M TA M B M F E A (FLANGE) A T SEATING PLANE CASE 465 - 06 ISSUE G NI - 780 MRF6S19120HR3 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 4X U (FLANGE) B 1 4X Z (LID) (FLANGE) B 2 2X K D bbb M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF TA M B M N (LID) R M (LID) ccc M H 3 TA M B M ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C M TA B M M M F T SEATING PLANE E A (FLANGE) A CASE 465A - 06 ISSUE H NI - 780S MRF6S19120HSR3 STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF6S19120HR3 MRF6S19120HSR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF6S19120HR3 MRF6S19120HSR3 1Rev. 1, 5/2006 2 Document Number: MRF6S19120H RF Device Data Freescale Semiconductor