MRF6S19120HR3

Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S19120HR3 MRF6S19120HSR3 Designed for N--CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WLL applications. • Typical Single--Carrier N--CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 19 Watts Avg., f = 1990 MHz, IS--95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 15 dB Drain Efficiency — 21.5% ACPR @ 885 kHz Offset — --54 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 1930--1990 MHz, 19 W AVG., 28 V SINGLE N--CDMA LATERAL N--CHANNEL RF POWER MOSFETs CASE 465--06, STYLE 1 NI--780 MRF6S19120HR3 CASE 465A--06, STYLE 1 NI--780S MRF6S19120HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +68 Vdc Gate--Source Voltage VGS --0.5, +12 Vdc Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 120 W CW Case Temperature 73°C, 19 W CW RθJC 0.43 0.45 ARCHIVE INFORMATION ARCHIVE INFORMATION N--Channel Enhancement--Mode Lateral MOSFETs °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2005--2006, 2008, 2010. All rights reserved. RF Device Data Freescale Semiconductor MRF6S19120HR3 MRF6S19120HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1A (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 270 μAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1000 mAdc Measured in Functional Test) VGS(Q) 2 2.8 4 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2.7 Adc) VDS(on) — 0.21 0.3 Vdc Crss — 1.95 — pF Characteristic On Characteristics Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 19 W Avg. N--CDMA, f = 1990 MHz, Single--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Gps 14 15 17 dB Drain Efficiency ηD 20 21.5 — % ACPR — --54 --48 dBc IRL — --13 --9 dB Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. ARCHIVE INFORMATION ARCHIVE INFORMATION Off Characteristics MRF6S19120HR3 MRF6S19120HSR3 2 RF Device Data Freescale Semiconductor VBIAS B1 C4 + RF INPUT C9 C5 C7 R2 Z2 Z3 ARCHIVE INFORMATION + + C10 C11 C12 C13 C14 Z7 Z8 Z9 VSUPPLY RF OUTPUT Z10 C2 Z5 Z4 C1 Z1 Z2 Z3 Z4 Z5 Z6 + C3 Z6 Z1 C8 + DUT 1.242″ x 0.084″ Microstrip 0.839″ x 0.084″ Microstrip 0.230″ x 0.180″ Microstrip 0.320″ x 1.100″ Microstrip 0.093″ x 1.100″ Microstrip 0.160″ x 1.098″ Microstrip Z7 Z8 Z9 Z10 PCB 0.387″ x 1.098″ Microstrip 0.169″ x 0.316″ Microstrip 0.781″ x 0.084″ Microstrip 1.228″ x 0.084″ Microstrip Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55 Figure 1. MRF6S19120HR3(SR3) Test Circuit Schematic Table 5. MRF6S19120HR3(SR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Short RF Bead 2743019447 Fair--Rite C1, C2 10 pF Chip Capacitors ATC100B100JT500XT ATC C3, C4 5.1 pF Chip Capacitors ATC100B5R1CT500XT ATC C5, C6 1.0 nF Chip Capacitors ATC100B102JT500XT ATC C7, C8 0.1 μF Chip Capacitors C1825C100J5RAC Kemet C9 10 μF, 35 V Tantalum Chip Capacitor T491X106K035AT Kemet C10, C11 10 μF, 35 V Tantalum Chip Capacitors GRM55DR61H106KA88L Murata C12, C13 22 μF, 50 V Tantalum Chip Capacitors T491C105K022AT Kemet C14 470 μF, 63 V Electrolytic Capacitor, Radial EMVY630GTR471MLN0S Nippon Chemi--Con R1 560 KΩ, 1/4 W Chip Resistor CRCW12065603FKEA Vishay R2 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay ARCHIVE INFORMATION R1 C6 + MRF6S19120HR3 MRF6S19120HSR3 RF Device Data Freescale Semiconductor 3 C4 B1 R2 C6 C8 C3 R1 C13 C11 C10 C5 C7 C12 C1 C14 ARCHIVE INFORMATION CUT OUT AREA C2 MRF6S19120 Rev. 0 Figure 2. MRF6S19120HR3(SR3) Test Circuit Component Layout ARCHIVE INFORMATION C9 MRF6S19120HR3 MRF6S19120HSR3 4 RF Device Data Freescale Semiconductor 24 Gps, POWER GAIN (dB) 15.2 15 VDD = 28 Vdc, Pout = 19 W (Avg.), IDQ = 1000 mA Single--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) Gps 14.8 14.6 14.4 14.2 IRL ACPR 20 --45 --50 --55 ALT1 --60 --65 14 1940 1950 1960 1970 1980 1990 2000 2010 2020 2030 2040 --10 --12 --14 --16 --18 --20 --22 --24 --26 f, FREQUENCY (MHz) Gps, POWER GAIN (dB) 15.2 15 14.8 30 ηD 28 Gps IRL 14.6 14.4 14.2 VDD = 28 Vdc, Pout = 32 W (Avg.), IDQ = 1000 mA Single--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) ACPR 26 --35 --40 --45 --50 ALT1 --55 14 1940 1950 1960 1970 1980 1990 2000 2010 2020 2030 2040 --10 --12 --14 --16 --18 --20 --22 --24 --26 IRL, INPUT RETURN LOSS (dB) 15.4 ACPR (dBc), ALT1 (dBc) 32 15.6 ηD, DRAIN EFFICIENCY (%) Figure 3. 2--Carrier N--CDMA Broadband Performance @ Pout = 19 Watts Avg. f, FREQUENCY (MHz) Figure 4. 2--Carrier N--CDMA Broadband Performance @ Pout = 32 Watts Avg. 17 --20 16 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1500 mA Gps, POWER GAIN (dB) ARCHIVE INFORMATION 22 ηD ARCHIVE INFORMATION 15.4 IRL, INPUT RETURN LOSS (dB) 26 ACPR (dBc), ALT1 (dBc) 15.6 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS 1250 mA 15 1000 mA 750 mA 14 13 12 500 mA 0.6 VDD = 28 Vdc f1 = 1988.75 MHz, f2 = 1991.25 MHz Two--Tone Measurements, 2.5 MHz Tone Spacing 10 1 100 300 --25 VDD = 28 Vdc f1 = 1988.75 MHz, f2 = 1991.25 MHz Two--Tone Measurements, 2.5 MHz Tone Spacing --30 IDQ = 500 mA --35 1500 mA 750 mA --40 --45 1250 mA --50 --55 0.6 1000 mA 1 10 100 300 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two--Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S19120HR3 MRF6S19120HSR3 RF Device Data Freescale Semiconductor 5 --20 --40 --50 3rd Order 5th Order 7th Order --60 0.1 10 1 100 TWO--TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing Figure 8. Pulsed CW Output Power versus Input Power 50 40 30 20 VDD = 28 Vdc, IDQ = 1000 mA f = 1990 MHz, Single--Carrier N--CDMA 1.2288 MHz Channel Bandwidth PAR = 9.8 dB @ 0.01% Probability (CCDF) 25_C 85_C --30_C Gps TC = 25_C ηD 25_C --20 ACPR --30 --40 ALT1 --50 --60 10 25_C 85_C 0 ACPR (dBc), ALT1 (dBc) --30 63 62 61 Ideal 60 59 P3dB = 52.64 dBm (183.69 W) 58 57 56 55 P1dB = 51.9 dBm (154.32 W) Actual 54 53 52 51 VDD = 28 Vdc, IDQ = 1000 mA 50 Pulsed CW, 12 μsec(on), 1% Duty Cycle 49 48 f = 1990 MHz 47 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 Pout, OUTPUT POWER (dBm) --10 VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1000 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 1990 MHz --70 --30_C --10 1 --80 100 150 10 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. Single--Carrier N--CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power 25_C 60 TC = --30_C 16 Gps 25_C 15 85_C 50 40 85_C 14 30 13 20 12 11 VDD = 28 Vdc IDQ = 1000 mA f = 1990 MHz ηD 1 10 10 0 100 15 VDD = 32 V 14 Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 17 16 70 --30_C ηD, DRAIN EFFICIENCY (%) 18 13 12 ARCHIVE INFORMATION 0 ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) ARCHIVE INFORMATION IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS 28 V 11 24 V 10 9 8 IDQ = 1000 mA f = 1990 MHz 7 6 0 50 100 150 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power Figure 11. Power Gain versus Output Power 200 MRF6S19120HR3 MRF6S19120HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS MTTF (HOURS) 108 107 106 110 130 150 170 190 210 230 250 ARCHIVE INFORMATION 90 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 19 W Avg., and ηD = 21.5%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. MTTF Factor versus Junction Temperature N--CDMA TEST SIGNAL --10 100 --20 10 --30 1 --40 --50 0.1 IS--95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 (dB) PROBABILITY (%) ARCHIVE INFORMATION 105 --70 --80 --90 0.0001 0 2 4 6 --60 8 PEAK--TO--AVERAGE (dB) Figure 13. Single--Carrier CCDF N--CDMA 10 1.2288 MHz Channel BW ........................................... ................... . . . .. ... .. .. ... .. .. . .. .. .. ... --ALT1 in 30 kHz +ALT1 in 30 kHz .. .. Integrated BW Integrated BW ......... ........................ ........... .... ............ ........... .. . . . . . . . . . .... ...... .... . ........ ................. ....... .......... ........ .......... ...... . . . ............... . . . . . . .......... . ............... . . ............ --ACPR in 30 kHz ..... .... . ........... +ACPR in 30 kHz . . . . ... .. . . ....... . . .............. . . ... .......... . . . Integrated BW Integrated BW ............... .. ...... ..... ................ ....... .......... ... --100 --110 --3.6 --2.9 --2.2 --1.5 --0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 14. Single--Carrier N--CDMA Spectrum MRF6S19120HR3 MRF6S19120HSR3 RF Device Data Freescale Semiconductor 7 f = 2020 MHz Zo = 10 Ω Zload ARCHIVE INFORMATION f = 2020 MHz Zsource f = 1930 MHz VDD = 28 Vdc, IDQ = 1000 mA, Pout = 19 W Avg. f MHz Zsource Ω Zload Ω 1930 3.03 -- j5.14 1.52 -- j1.77 1960 2.94 -- j4.54 1.51 -- j1.37 1990 2.75 -- j4.34 1.38 -- j1.20 2020 2.75 -- j4.18 1.41 -- j1.11 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source ARCHIVE INFORMATION f = 1930 MHz Z load Figure 15. Series Equivalent Source and Load Impedance MRF6S19120HR3 MRF6S19120HSR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS G Q bbb 2X 1 M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 3 B K 2 (FLANGE) D bbb T A M B M M M bbb N ARCHIVE INFORMATION R (INSULATOR) M T A M T A M B M B M ccc M T A M M aaa M T A M ccc B S (LID) H (LID) M (INSULATOR) B M C F E A T A SEATING PLANE INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465--06 ISSUE G NI--780 MRF6S19120HR3 (FLANGE) DIM A B C D E F G H K M N Q R S aaa bbb ccc 4X U (FLANGE) 4X Z (LID) B 1 K 2X 2 B (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. D bbb T A M M B M N (LID) ccc M M T A R M B M M B M ccc M T A M aaa M T A M S (INSULATOR) bbb M T A (LID) B M (INSULATOR) B M H C 3 E A A (FLANGE) F T SEATING PLANE CASE 465A--06 ISSUE H NI--780S MRF6S19120HSR3 DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 -----0.040 -----0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 -----1.02 -----0.76 0.127 REF 0.254 REF 0.381 REF ARCHIVE INFORMATION B STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF6S19120HR3 MRF6S19120HSR3 RF Device Data Freescale Semiconductor 9 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. 2 Dec. 2008 Description • Changed ”Full Frequency Band” to ”f = 1990 MHz” to match functional tests, p. 1 • Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality is standard, p. 1 • Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in Functional Test”, On Characteristics table, p. 2 • Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 • Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3 • Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers, p. 3 • Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 • Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 • Updated ALT1 Bandwidth and Offset in Fig. 13, Single--Carrier CCDF N--CDMA, p. 7 • Updated --ALT1 and +ALT1 Bandwidths in Fig. 14, Single--Carrier N--CDMA Spectrum, p. 7 • Added Product Documentation and Revision History, p. 10 Dec. 2010 • Data sheet archived. Parts no longer manufactured. ARCHIVE INFORMATION Date ARCHIVE INFORMATION Revision MRF6S19120HR3 MRF6S19120HSR3 10 RF Device Data Freescale Semiconductor How to Reach Us: Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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ARCHIVE INFORMATION ARCHIVE INFORMATION Home Page: www.freescale.com Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005--2006, 2008, 2010. All rights reserved. MRF6S19120HR3 MRF6S19120HSR3 Document Number: RF Device Data MRF6S19120H Rev. 2, 12/2008 Freescale Semiconductor 11