MRF6V12500HR3_10

Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 2, 9/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 960 and 1215 MHz. These devices are suitable for use in pulsed applications. • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 200 mA, Pulsed Width = 128 μsec, Duty Cycle = 10% Application Narrowband Broadband Pout (W) 500 Peak 500 Peak f (MHz) 1030 960--1215 Gps (dB) 19.7 18.5 ηD (%) 62.0 57.0 MRF6V12500HR3 MRF6V12500HSR3 960-1215 MHz, 500 W, 50 V PULSED LATERAL N-CHANNEL RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 Watts Peak Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. CASE 465-06, STYLE 1 NI-780 MRF6V12500HR3 CASE 465A-06, STYLE 1 NI-780S MRF6V12500HSR3 Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value --0.5, +110 --6.0, +10 -- 65 to +150 150 225 Unit Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 500 W Pulsed, 128 μsec Pulse Width, 10% Duty Cycle Symbol ZθJC Value (2,3) 0.044 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2009--2010. All rights reserved. MRF6V12500HR3 MRF6V12500HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) B (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 200 mA) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 90 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 1.32 mA) Gate Quiescent Voltage (VDD = 50 Vdc, ID = 200 mAdc, Measured in Functional Test) Drain--Source On--Voltage (VGS = 10 Vdc, ID = 3.26 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss — — — 0.2 697 1391 — — — pF pF pF VGS(th) VGS(Q) VDS(on) 0.9 1.7 — 1.7 2.4 0.25 2.4 3.2 — Vdc Vdc Vdc IGSS V(BR)DSS IDSS IDSS — 110 — — — — — — 10 — 20 200 μAdc Vdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 200 mA, Pout = 500 W Peak (50 W Avg.), f = 1030 MHz, Pulsed, 128 μsec Pulse Width, 10% Duty Cycle Power Gain Drain Efficiency Input Return Loss Gps ηD IRL 18.5 58.0 — 19.7 62.0 --18 22.0 — --9 dB % dB Typical Broadband Performance — 960-1215 MHz (In Freescale 960--1215 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 200 mA, Pout = 500 W Peak (50 W Avg.), f = 960--1215 MHz, Pulsed, 128 μsec Pulse Width, 10% Duty Cycle Power Gain Drain Efficiency 1. Part internally matched both on input and output. Gps ηD — — 18.5 57.0 — — dB % MRF6V12500HR3 MRF6V12500HSR3 2 RF Device Data Freescale Semiconductor VBIAS R3 R1 C5 C9 C8 C7 C3 Z19 Z9 Z10 Z11 Z12 Z13 Z14 C12 C13 + C14 + C15 VSUPPLY RF INPUT Z15 Z16 Z17 C2 Z18 RF OUTPUT Z1 C1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 DUT Z20 Z21 R4 R2 C6 C4 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19, Z21 PCB C16 C11 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9, Z20 Z10 C10 0.457″ x 0.080″ Microstrip 0.250″ x 0.080″ Microstrip 0.605″ x 0.040″ Microstrip 0.080″ x 0.449″ Microstrip 0.374″ x 0.608″ Microstrip 0.118″ x 1.252″ Microstrip 0.778″ x 1.710″ Microstrip 0.095″ x 1.710″ Microstrip 0.482″ x 0.050″ Microstrip 0.138″ x 1.500″ Microstrip 0.161” x 1.500″ Microstrip 0.613” x 1.281″ Microstrip 0.248” x 0.865″ Microstrip 0.087” x 0.425″ Microstrip 0.309” x 0.090″ Microstrip 0.193” x 0.516″ Microstrip 0.279” x 0.080″ Microstrip 0.731” x 0.080″ Microstrip 0.507” x 0.040″ Microstrip Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55 Figure 1. MRF6V12500HR3(HSR3) Test Circuit Schematic Table 5. MRF6V12500HR3(HSR3) Test Circuit Component Designations and Values Part C1, C2 C3, C4, C5, C6 C7, C10 C8, C11, C13, C16 C9 C12 C14, C15 R1, R2 R3, R4 Description 5.1 pF Chip Capacitors 33 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 2.2 μF, 100 V Chip Capacitors 22 μF, 25 V Chip Capacitor 1 μF, 100 V Chip Capacitor 470 μF, 63 V Electrolytic Capacitors 56 Ω, 1/4 W Chip Resistors 0 Ω, 3 A Chip Resistors Part Number ATC100B5R1CT500XT ATC100B330JT500XT GRM55DR61H106KA88L 2225X7R225KT3AB TPSD226M025R0200 GRM31CR72A105KA01L MCGPR63V477M13X26--RH CRCW120656R0FKEA CRCW12060000Z0EA Manufacturer ATC ATC Murata ATC AVX Murata Multicomp Vishay Vishay MRF6V12500HR3 MRF6V12500HSR3 RF Device Data Freescale Semiconductor 3 C14 R3 MRF6V12500H Rev. 1 C9 C12 C8 C7 R1 C3 C5 C13 C15 CUT OUT AREA C1 C2 R2 C11 C10 R4 C4 C6 C16 Figure 2. MRF6V12500HR3(HSR3) Test Circuit Component Layout MRF6V12500HR3 MRF6V12500HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 10000 1000 C, CAPACITANCE (pF) 100 10 1 Crss 0.1 0 10 20 30 40 50 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) MAXIMUM OPERATING Tcase (°C) Ciss Coss Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 160 140 120 100 80 60 40 20 0 0 5 10 15 20 25 DUTY CYCLE (%) VDD = 50 Vdc, IDQ = 200 mA f = 1030 MHz, Pulse Width = 128 μsec Pout = 525 W Pout = 500 W Pout = 475 W Figure 3. Capacitance versus Drain-Source Voltage 22 21 Gps, POWER GAIN (dB) 20 19 18 17 16 15 14 30 VDD = 50 Vdc, IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 μsec, Duty Cycle = 10% 100 Pout, OUTPUT POWER (WATTS) PULSED ηD Gps 80 70 ηD, DRAIN EFFICIENCY (%) 60 50 40 30 20 10 0 1000 Pout, OUTPUT POWER (dBm) Figure 4. Safe Operating Area 62 P3dB = 57.6 dBm (575 W) 61 Ideal 60 59 P1dB = 57.1 dBm (511 W) 58 57 Actual 56 55 54 53 52 51 VDD = 50 Vdc, IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 μsec, Duty Cycle = 10% 50 49 32 34 36 38 40 42 30 Pin, INPUT POWER (dBm) PULSED Figure 5. Pulsed Power Gain and Drain Efficiency versus Output Power 22 21 Gps, POWER GAIN (dB) 20 19 18 17 30 400 mA 200 mA 600 mA IDQ = 800 mA Gps, POWER GAIN (dB) 22 21 20 19 18 17 16 15 14 VDD = 50 Vdc, f = 1030 MHz Pulse Width = 128 μsec, Duty Cycle = 10% 100 Pout, OUTPUT POWER (WATTS) PULSED 1000 13 12 30 Figure 6. Pulsed Output Power versus Input Power IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 μsec Duty Cycle = 10% 35 V 50 V 45 V 40 V VDD = 30 V 100 1000 Pout, OUTPUT POWER (WATTS) PULSED Figure 7. Pulsed Power Gain versus Output Power Figure 8. Pulsed Power Gain versus Output Power MRF6V12500HR3 MRF6V12500HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 700 600 Pout, OUTPUT POWER (dBm) 500 400 300 200 100 0 0 2 4 6 8 10 12 Pin, INPUT POWER (dBm) PULSED VDD = 50 Vdc, IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 μsec, Duty Cycle = 10% 55_C TC = --30_C Gps, POWER GAIN (dB) 85_C 22 21 20 19 18 17 16 15 14 30 ηD VDD = 50 Vdc, IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 μsec, Duty Cycle = 10% 100 Pout, OUTPUT POWER (WATTS) PULSED TC = --30_C 25_C 55_C Gps 80 70 60 50 40 30 20 10 0 1000 ηD, DRAIN EFFICIENCY (%) 25_C 85_C Figure 9. Pulsed Output Power versus Input Power 109 Figure 10. Pulsed Power Gain and Drain Efficiency versus Output Power 108 MTTF (HOURS) 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 500 W Peak, Pulse Width = 128 μsec, Duty Cycle = 10%, and ηD = 62%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 11. MTTF versus Junction Temperature MRF6V12500HR3 MRF6V12500HSR3 6 RF Device Data Freescale Semiconductor Zo = 5 Ω f = 1030 MHz Zload f = 1030 MHz Zsource VDD = 50 Vdc, IDQ = 200 mA, Pout = 500 W Peak f MHz 1030 Zsource Ω 1.36 -- j1.27 Zload Ω 2.50 -- j0.17 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Input Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance MRF6V12500HR3 MRF6V12500HSR3 RF Device Data Freescale Semiconductor 7 C11 C9 C7 C5 R1 C3 C13 C15 C18 C17 C1 CUT OUT AREA C2 MRF6V12500 Rev. 1 C4 R2 C6 C8 C14 C10 C12 C16 Figure 13. MRF6V12500H(HS) Test Circuit Component Layout — 960-1215 MHz Table 6. MRF6V12500H(HS) Test Circuit Component Designations and Values — 960-1215 MHz Part C1 C2 C3, C4 C5, C6, C11, C12 C7 C8 C9, C10 C13, C14 C15, C16 C17, C18 R1, R2 PCB Description 2.2 pF Chip Capacitor 0.2 pF Chip Capacitor 33 pF Chip Capacitors 2.2 μF, 100 V Chip Capacitors 22 μF, 35 V Tantalum Capacitor 8.2 pF Chip Capacitor 39 pF Chip Capacitors 0.022 μF, 100 V Chip Capacitors 0.10 μF, 100 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 22 Ω, 1/4 W Chip Resistors 0.030″, εr = 2.55 Part Number ATC100B2R2JT500XT ATC100B0R2BT500XT ATC100B330JT500XT G2225X7R225KT3AB T491X226K035AT ATC100B8R2CT500XT ATC100B390JT500XT C1825C223K1GAC C1812F104K1RAC MCGPR63V477M13X26--RH CRCW120622R0FKEA AD255A ATC ATC ATC ATC Kemet ATC ATC Kemet Kemet Multicomp Vishay Arlon Manufacturer MRF6V12500HR3 MRF6V12500HSR3 8 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — 960--1215 MHz Gps ηD, DRAIN EFFICIENCY (%) ηD, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB) 20 19 18 Gps, POWER GAIN (dB) 17 16 15 14 13 12 11 10 VDD = 50 Vdc, Pout = 500 W Peak (50 W Avg.), IDQ = 200 mA Pulse Width = 128 μsec, Duty Cycle = 10% 900 950 1000 1050 1100 1150 1200 1250 IRL ηD 66 64 62 60 58 56 0 --5 --10 --15 --20 1300 f, FREQUENCY (MHz) Figure 14. Pulsed Power Gain, Drain Efficiency and IRL versus Frequency 22 21 Gps, POWER GAIN (dB) 20 19 Gps 18 17 200 1030 MHz 65 1150 MHz ηD 1215 MHz 60 960 MHz 1030 MHz 1150 MHz 960 MHz 1215 MHz 55 50 45 40 250 300 350 400 450 500 550 600 Pout, PEAK OUTPUT POWER (WATTS) VDD = 50 Vdc IDQ = 200 mA Pulse Width = 128 μsec Duty Cycle = 10% Figure 15. Power Gain and Drain Efficiency versus Output Power MRF6V12500HR3 MRF6V12500HSR3 RF Device Data Freescale Semiconductor 9 Zo = 5 Ω f = 1215 MHz f = 1215 MHz Zsource Zload f = 960 MHz f = 960 MHz VDD = 50 Vdc, IDQ = 200 mA, Pout = 500 W Peak f MHz 960 1030 1090 1150 1215 Zsource Ω 2.25 -- j1.78 2.51 -- j1.02 2.69 -- j0.73 2.71 -- j0.65 2.48 -- j0.76 Zload Ω 1.38 -- j1.53 1.48 -- j1.11 1.51 -- j0.78 1.53 -- j0.49 1.53 -- j0.33 Zsource = Test circuit impedance as measured from gate to ground. = Test circuit impedance as measured from Zload drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 16. Series Equivalent Source and Load Impedance — 960-1215 MHz MRF6V12500HR3 MRF6V12500HSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF 3 (FLANGE) B 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N H (LID) M TA B M ccc aaa M TA TA M B B M S M (INSULATOR) M ccc C TA M B M M M F E A (FLANGE) A T SEATING PLANE CASE 465-06 ISSUE G NI-780 MRF6V12500HR3 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 4X U (FLANGE) B 1 4X Z (LID) (FLANGE) B 2 2X K D bbb M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 -----0.040 -----0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 -----1.02 -----0.76 0.127 REF 0.254 REF 0.381 REF TA M B M N (LID) ccc M H 3 M TA M B R M (LID) ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C M TA B M M M F T SEATING PLANE E A (FLANGE) A STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE CASE 465A-06 ISSUE H NI-780S MRF6V12500HSR3 MRF6V12500HR3 MRF6V12500HSR3 RF Device Data Freescale Semiconductor 11 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 Date Sept. 2009 Apr. 2010 • Initial Release of Data Sheet • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1 • Added RF High Power Model availability to Product Software, p. 9 2 Sept. 2010 • Maximum Ratings table: corrected VDSS from --0.5, +100 to --0.5, +110 Vdc, p. 2 • Added 960--1215 MHz Broadband application as follows: -- Typical Performance, p. 1, 2 -- Fig. 13, Test Circuit Component Layout and Table 6, Test Circuit Component Designations and Values, p. 8 -- Fig. 14, Pulsed Power Gain, Drain Efficiency and IRL versus Frequency, p. 9 -- Fig. 15, Power Gain and Drain Efficiency versus Output Power, p. 9 -- Fig. 16, Series Equivalent Source and Load Impedance, p. 10 Description MRF6V12500HR3 MRF6V12500HSR3 12 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1--8--1, Shimo--Meguro, Meguro--ku, Tokyo 153--0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009--2010. All rights reserved. MRF6V12500HR3 MRF6V12500HSR3 Document Number: RF Device Data MRF6V12500H Rev. 2, 9/2010 Freescale Semiconductor 13