Freescale Semiconductor
Technical Data
Document Number: MRF6V12500H
Rev. 5, 7/2016
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These RF power transistors are designed for applications operating at
frequencies between 960 and 1215 MHz such as distance measuring
equipment (DME), transponders and secondary radars for air traffic control.
These devices are suitable for use in pulse applications, including Mode S
ELM.
Typical Pulse Performance: VDD = 50 Volts, IDQ = 200 mA
Pout (1)
(W)
Freq.
(MHz)
Gps
(dB)
D
(%)
Pulse
(128 sec, 10% Duty Cycle)
500 Peak
1030
19.7
62.0
Narrowband
Mode S ELM
Pulse
(48 (32 sec on, 18 sec off),
Period 2.4 msec,
6.4% Long--term Duty Cycle)
500 Peak
1030
19.7
62.0
Broadband
Pulse
(128 sec, 10% Duty Cycle)
500 Peak
960--1215
18.5
57.0
Application
Signal Type
Narrowband
Short Pulse
MRF6V12500H
MRF6V12500HS
MRF6V12500GS
960--1215 MHz, 500 W, 50 V
PULSE
RF POWER LDMOS TRANSISTORS
NI--780H--2L
MRF6V12500H
1. Minimum output power for each specified pulse condition.
Capable of Handling 10:1 VSWR @ 50 Vdc, 1030 MHz, 500 Watts Peak
Power
Features
NI--780S--2L
MRF6V12500HS
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
NI--780GS--2L
MRF6V12500GS
1 Drain
Gate 2
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2009--2010, 2012, 2015--2016. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF6V12500H MRF6V12500HS MRF6V12500GS
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +110
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
C
TC
150
C
TJ
225
C
Symbol
Value (2,3)
Unit
ZJC
0.044
C/W
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Impedance, Junction to Case
Case Temperature 80C, 500 W Peak, 128 sec Pulse Width, 10% Duty Cycle
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2, passes 2600 V
Machine Model (per EIA/JESD22--A115)
B, passes 200 V
Charge Device Model (per JESD22--C101)
IV, passes 2000 V
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
IGSS
—
—
10
Adc
110
—
—
Vdc
Off Characteristics
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID = 200 mA)
V(BR)DSS
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
—
—
20
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 90 Vdc, VGS = 0 Vdc)
IDSS
—
—
200
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 1.32 mA)
VGS(th)
0.9
1.7
2.4
Vdc
Gate Quiescent Voltage
(VDD = 50 Vdc, ID = 200 mAdc, Measured in Functional Test)
VGS(Q)
1.7
2.4
3.2
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3.26 Adc)
VDS(on)
—
0.25
—
Vdc
Reverse Transfer Capacitance
(VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.2
—
pF
Output Capacitance
(VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
697
—
pF
Input Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
Ciss
—
1391
—
pF
On Characteristics
Dynamic Characteristics (4)
1.
2.
3.
4.
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at http://www.nxp.com/RF/calculators.
Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
Part internally matched both on input and output.
(continued)
MRF6V12500H MRF6V12500HS MRF6V12500GS
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 200 mA, Pout = 500 W Peak (50 W Avg.),
f = 1030 MHz, 128 sec Pulse Width, 10% Duty Cycle
Power Gain
Gps
18.5
19.7
22.0
dB
Drain Efficiency
D
58.0
62.0
—
%
Input Return Loss
IRL
—
--18
--9
dB
Typical Broadband Performance — 960--1215 MHz (In Freescale 960--1215 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc,
IDQ = 200 mA, Pout = 500 W Peak (50 W Avg.), f = 960--1215 MHz, 128 sec Pulse Width, 10% Duty Cycle
Power Gain
Gps
—
18.5
—
dB
Drain Efficiency
D
—
57.0
—
%
Table 5. Ordering Information
Device
Tape and Reel Information
Package
MRFE6V12500HR5
MRFE6V12500HSR5
MRFE6V12500GSR5
NI--780H--2L
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel
NI--780S--2L
NI--780GS--2L
MRF6V12500H MRF6V12500HS MRF6V12500GS
RF Device Data
Freescale Semiconductor, Inc.
3
R3
VBIAS
R1
C5
C9
C8
C7
C12
C13
VSUPPLY
+
+
C14
C15
C3
Z19
Z9
RF
INPUT
Z10
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z11
Z12
Z13
Z14
Z15
Z16
Z17
C2
Z8
C1
Z18
RF
OUTPUT
DUT
Z21
Z20
R4
R2
C11
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9, Z20
Z10
C6
C10
C16
C4
0.457 x 0.080 Microstrip
0.250 x 0.080 Microstrip
0.605 x 0.040 Microstrip
0.080 x 0.449 Microstrip
0.374 x 0.608 Microstrip
0.118 x 1.252 Microstrip
0.778 x 1.710 Microstrip
0.095 x 1.710 Microstrip
0.482 x 0.050 Microstrip
0.138 x 1.500 Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z19, Z21
PCB
0.161” x 1.500 Microstrip
0.613” x 1.281 Microstrip
0.248” x 0.865 Microstrip
0.087” x 0.425 Microstrip
0.309” x 0.090 Microstrip
0.193” x 0.516 Microstrip
0.279” x 0.080 Microstrip
0.731” x 0.080 Microstrip
0.507” x 0.040 Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030, r = 2.55
Figure 2. MRF6V12500H(HS) Test Circuit Schematic
Table 6. MRF6V12500H(HS) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
5.1 pF Chip Capacitors
ATC100B5R1CT500XT
ATC
C3, C4, C5, C6
33 pF Chip Capacitors
ATC100B330JT500XT
ATC
C7, C10
10 F, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C8, C11, C13, C16
2.2 F, 100 V Chip Capacitors
2225X7R225KT3AB
ATC
C9
22 F, 25 V Chip Capacitor
TPSD226M025R0200
AVX
C12
1 F, 100 V Chip Capacitor
GRM31CR72A105KA01L
Murata
C14, C15
470 F, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
R1, R2
56 , 1/4 W Chip Resistors
CRCW120656R0FKEA
Vishay
R3, R4
0 , 3 A Chip Resistors
CRCW12060000Z0EA
Vishay
MRF6V12500H MRF6V12500HS MRF6V12500GS
4
RF Device Data
Freescale Semiconductor, Inc.
C14
C12
R3
Rev. 1
C8
C7
R1
C1
R2
C11 C10
R4
C13
C5
C3
CUT OUT AREA
MRF6V12500H
C9
C4
C15
C2
C6
C16
Figure 3. MRF6V12500H(HS) Test Circuit Component Layout
MRF6V12500H MRF6V12500HS MRF6V12500GS
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
10000
160
C, CAPACITANCE (pF)
MAXIMUM OPERATING Tcase (C)
Ciss
1000
Coss
100
Measured with 30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
10
1
Crss
140
120
100
Pout = 525 W
80
Pout = 500 W
60
40
VDD = 50 Vdc, IDQ = 200 mA
f = 1030 MHz, Pulse Width = 128 sec
20
0
0.1
0
10
20
30
40
0
50
5
15
10
20
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
DUTY CYCLE (%)
Figure 4. Capacitance versus Drain--Source Voltage
Figure 5. Safe Operating Area
22
20
60
50
19
18
40
D
17
16
30
20
VDD = 50 Vdc, IDQ = 200 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
15
14
30
10
D, DRAIN EFFICIENCY (%)
70
Gps
Pout, OUTPUT POWER (WATTS) PEAK
80
21
Gps, POWER GAIN (dB)
Pout = 475 W
0
1000
100
25
62
P3dB = 57.6 dBm (575 W)
61
Ideal
60
59 P1dB = 57.1 dBm (511 W)
58
57
Actual
56
55
54
53
52
51
VDD = 50 Vdc, IDQ = 200 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
50
49
32
34
36
38
40
42
30
Pout, OUTPUT POWER (WATTS) PEAK
Pin, INPUT POWER (dBm) PEAK
Figure 6. Power Gain and Drain Efficiency
versus Output Power
Figure 7. Output Power versus Input Power
22
22
21
IDQ = 800 mA
20
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
21
20
400 mA
19
600 mA
200 mA
19
18
17
16
15
14
18
VDD = 50 Vdc, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
17
30
100
12
30
45 V
40 V
VDD = 30 V
13
1000
50 V
IDQ = 200 mA, f = 1030 MHz
Pulse Width = 128 sec
Duty Cycle = 10%
35 V
100
1000
Pout, OUTPUT POWER (WATTS) PEAK
Pout, OUTPUT POWER (WATTS) PEAK
Figure 8. Power Gain versus Output Power
Figure 9. Power Gain versus Output Power
MRF6V12500H MRF6V12500HS MRF6V12500GS
6
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
600
500
21
85_C
25_C
55_C
400
300
200
VDD = 50 Vdc, IDQ = 200 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
100
2
4
6
8
10
TC = --30_C
20
19
18
85_C
17
70
50
40
55_C
30
16
20
D
VDD = 50 Vdc, IDQ = 200 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
14
30
12
80
60
25_C
15
0
0
Gps
100
Pin, INPUT POWER (dBm) PEAK
D, DRAIN EFFICIENCY (%)
22
TC = --30_C
Gps, POWER GAIN (dB)
Pout, OUTPUT POWER (WATTS) PEAK
700
10
0
1000
Pout, OUTPUT POWER (WATTS) PEAK
Figure 10. Output Power versus Input Power
Figure 11. Power Gain and Drain Efficiency versus
Output Power
109
VDD = 50 Vdc
Pout = 500 W Peak
Pulse Width = 128 sec
Duty Cycle = 10%
D = 62%
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (C)
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http://www.nxp.com/RF/calculators.
Figure 12. MTTF versus Junction Temperature
VDD = 50 Vdc, IDQ = 200 mA, Pout = 500 W Peak
f
MHz
Zsource
Zload
1030
1.36 -- j1.27
2.50 -- j0.17
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Input
Matching
Network
Output
Matching
Network
Device
Under
Test
Zsource
Zload
Figure 13. Series Equivalent Source and Load Impedance
MRF6V12500H MRF6V12500HS MRF6V12500GS
RF Device Data
Freescale Semiconductor, Inc.
7
C11
C9
C7
C5
C17
C15
C13
R1
C18
CUT OUT AREA
C3
C1
C2
C8
MRF6V12500
Rev. 1
C4
R2
C14
C16
C10
C6
C12
Figure 14. MRF6V12500H(HS) Test Circuit Component Layout — 960--1215 MHz
Table 7. MRF6V12500H(HS) Test Circuit Component Designations and Values — 960--1215 MHz
Part
Description
Part Number
Manufacturer
C1
2.2 pF Chip Capacitor
ATC100B2R2JT500XT
ATC
C2
0.2 pF Chip Capacitor
ATC100B0R2BT500XT
ATC
C3, C4
33 pF Chip Capacitors
ATC100B330JT500XT
ATC
C5, C6, C11, C12
2.2 F, 100 V Chip Capacitors
G2225X7R225KT3AB
ATC
C7
22 F, 35 V Tantalum Capacitor
T491X226K035AT
Kemet
C8
8.2 pF Chip Capacitor
ATC100B8R2CT500XT
ATC
C9, C10
39 pF Chip Capacitors
ATC100B390JT500XT
ATC
C13, C14
0.022 F, 100 V Chip Capacitors
C1825C223K1GAC
Kemet
C15, C16
0.10 F, 100 V Chip Capacitors
C1812F104K1RAC
Kemet
C17, C18
470 F, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
R1, R2
22 , 1/4 W Chip Resistors
CRCW120622R0FKEA
Vishay
PCB
0.030, r = 2.55
AD255A
Arlon
MRF6V12500H MRF6V12500HS MRF6V12500GS
8
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 960--1215 MHz
19
64
Gps, POWER GAIN (dB)
18
62
17
60
D
16
58
15
56
14
0
IRL
13
--5
12
--10
VDD = 50 Vdc, Pout = 500 W Peak (50 W Avg.), IDQ = 200 mA
Pulse Width = 128 sec, Duty Cycle = 10%
11
10
D, DRAIN
EFFICIENCY (%)
66
Gps
900
950
1000
1050
1100
1150
1200
1250
--15
--20
1300
IRL, INPUT RETURN
LOSS (dB)
20
f, FREQUENCY (MHz)
Figure 15. Power Gain, Drain Efficiency and IRL
versus Frequency
Gps, POWER GAIN (dB)
21
VDD = 50 Vdc
IDQ = 200 mA
Pulse Width = 128 sec
Duty Cycle = 10%
65
1150 MHz
1215 MHz
60
D
960 MHz
20
1150 MHz
19
960 MHz
Gps
18
17
200
55
1030 MHz
1030 MHz
1215 MHz
50
45
D DRAIN EFFICIENCY (%)
22
40
250
300
350
400
450
500
550
600
Pout, OUTPUT POWER (WATTS) PEAK
Figure 16. Power Gain and Drain Efficiency versus
Output Power
MRF6V12500H MRF6V12500HS MRF6V12500GS
RF Device Data
Freescale Semiconductor, Inc.
9
Zo = 5
f = 1215 MHz
f = 1215 MHz
Zsource
Zload
f = 960 MHz
f = 960 MHz
VDD = 50 Vdc, IDQ = 200 mA, Pout = 500 W Peak
f
MHz
Zsource
Zload
960
2.25 -- j1.78
1.38 -- j1.53
1030
2.51 -- j1.02
1.48 -- j1.11
1090
2.69 -- j0.73
1.51 -- j0.78
1150
2.71 -- j0.65
1.53 -- j0.49
1215
2.48 -- j0.76
1.53 -- j0.33
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Input
Matching
Network
Output
Matching
Network
Device
Under
Test
Zsource
Zload
Figure 17. Series Equivalent Source and Load Impedance — 960--1215 MHz
MRF6V12500H MRF6V12500HS MRF6V12500GS
10
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MRF6V12500H MRF6V12500HS MRF6V12500GS
RF Device Data
Freescale Semiconductor, Inc.
11
MRF6V12500H MRF6V12500HS MRF6V12500GS
12
RF Device Data
Freescale Semiconductor, Inc.
MRF6V12500H MRF6V12500HS MRF6V12500GS
RF Device Data
Freescale Semiconductor, Inc.
13
MRF6V12500H MRF6V12500HS MRF6V12500GS
14
RF Device Data
Freescale Semiconductor, Inc.
MRF6V12500H MRF6V12500HS MRF6V12500GS
RF Device Data
Freescale Semiconductor, Inc.
15
MRF6V12500H MRF6V12500HS MRF6V12500GS
16
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following resources to aid your design process.
Application Notes
AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2009
Initial Release of Data Sheet
1
Apr. 2010
Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
Added RF High Power Model availability to Product Software, p. 9
2
Sept. 2010
Maximum Ratings table: corrected VDSS from --0.5, +100 to --0.5, +110 Vdc, p. 2
Added 960--1215 MHz Broadband application as follows:
-- Typical Performance, p. 1, 2
-- Fig. 13, Test Circuit Component Layout and Table 6, Test Circuit Component Designations and Values, p. 8
-- Fig. 14, Pulsed Power Gain, Drain Efficiency and IRL versus Frequency, p. 9
-- Fig. 15, Power Gain and Drain Efficiency versus Output Power, p. 9
-- Fig. 16, Series Equivalent Source and Load Impedance, p. 10
3
June 2012
Table 3, ESD Protection Characteristics: added the device’s ESD passing level as applicable to each ESD
class, p. 2
Modified figure titles and/or graph axes labels to clarify application use, p. 5, 6, 9
Fig. 6, Output Power versus Input Power: corrected Pout, Output Power unit of measure to watts, p. 5
Fig. 9, Output Power versus Input Power: corrected Pout, Output Power unit of measure to watts, p. 6
Fig. 11, MTTF versus Junction Temperature: MTTF end temperature on graph changed to match maximum
operating junction temperature, p. 6
4
Mar. 2015
MRF6V12500HR3 tape and reel option replaced with MRF6V12500HR5 and MRF6V12500HSR3 tape and
reel option replaced with MRF6V12500HSR5 per PCN15551
Modified figure titles and/or graph axes labels to clarify application use, pp. 6, 7, 9
Typical performance table: added Narrowband Mode S ELM application data, p. 1
5
July 2016
Added part number MRF6V12500GS, pp. 1, 3
Added NI--780GS--2L package isometric, p. 1, and Mechanical Outline, pp. 15--16
MRF6V12500H MRF6V12500HS MRF6V12500GS
RF Device Data
Freescale Semiconductor, Inc.
17
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E 2009--2010, 2012, 2015--2016 Freescale Semiconductor, Inc.
MRF6V12500H MRF6V12500HS MRF6V12500GS
Document Number: MRF6V12500H
Rev. 5, 7/2016
18
RF Device Data
Freescale Semiconductor, Inc.
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