MRF6VP2600HR6

Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5.1, 7/2010 RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Watts Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz, Input Signal PAR = 9.3 dB @ 0.01% Probability on CCDF. Power Gain — 25 dB Drain Efficiency — 28.5% ACPR @ 4 MHz Offset — --61 dBc @ 4 kHz Bandwidth • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 600 Watts Peak, f = 225 MHz, Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain — 25.3 dB Drain Efficiency — 59% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 600 Watts Peak Power, Pulse Width = 100 μsec, Duty Cycle = 20% Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • CW Operation Capability with Adequate Cooling • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • Designed for Push--Pull Operation • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. MRF6VP2600HR6 2-500 MHz, 600 W, 50 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET CASE 375D-05, STYLE 1 NI-1230 PART IS PUSH-PULL RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB (Top View) Figure 1. Pin Connections Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value --0.5, +110 --6.0, +10 -- 65 to +150 150 225 Unit Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 99°C, 125 W CW, 225 MHz, 50 Vdc, IDQ = 2600 mA Case Temperature 64°C, 610 W CW, 352.2 MHz, 50 Vdc, IDQ = 150 mA Case Temperature 81°C, 610 W CW, 88--108 MHz, 50 Vdc, IDQ = 150 mA Symbol RθJC Value (2,3) 0.20 0.14 0.16 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2008--2010. All rights reserved. MRF6VP2600HR6 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics (1) Symbol IGSS V(BR)DSS IDSS IDSS Min — 110 — — Typ — — — — Max 10 — 50 2.5 Unit μAdc Vdc μAdc mA Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (ID = 150 mA, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 800 μAdc) Gate Quiescent Voltage (2) (VDD = 50 Vdc, ID = 2600 mAdc, Measured in Functional Test) Drain--Source On--Voltage (1) (VGS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) VGS(th) VGS(Q) VDS(on) 1 1.5 — 1.65 2.7 0.25 3 3.5 — Vdc Vdc Vdc Crss Coss Ciss — — — 1.7 101 287 — — — pF pF pF Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 2600 mA, Pout = 125 W Avg., f = 225 MHz, DVB--T OFDM Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @ ±4 MHz Offset. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss Power Gain Drain Efficiency Input Return Loss Gps ηD ACPR IRL Gps ηD IRL 24 27 — — — — — 25 28.5 --61 --18 22 68 --15 27 — --59 --9 — — — dB % dBc dB dB % dB Typical Performance — 352.2 MHz (In Freescale 352.2 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 600 W CW Typical Performance — 88-108 MHz (In Freescale 88--108 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 600 W CW Power Gain Drain Efficiency Input Return Loss 1. Each side of device measured separately. 2. Measurement made with device in push--pull configuration. Gps ηD IRL — — — 24.5 74 --5 — — — dB % dB MRF6VP2600HR6 2 RF Device Data Freescale Semiconductor VBIAS + C16 + C15 + B1 L3 L2 R1 L4 + C20 C21 C22 C23 + VSUPPLY + C14 C13 C12 C11 C9 C8 C7 C10 C6 C19 C17 C18 C24 C25 Z9 Z5 RF INPUT Z1 Z2 L1 Z3 Z4 J1 C1 C2 T1 Z1 Z2* Z3* Z4 Z5, Z6 Z7, Z8 Z9, Z10 Z11, Z12 1.049″ x 0.080″ Microstrip 0.143″ x 0.080″ Microstrip 0.188″ x 0.080″ Microstrip 0.192″ x 0.133″ Microstrip 0.418″ x 0.193″ Microstrip 0.217″ x 0.518″ Microstrip 0.200″ x 0.518″ Microstrip 0.375″ x 0.214″ Microstrip Z13, Z14 Z15*, Z16* Z17, Z18 Z19 Z20 PCB Z6 Z8 Z7 Z11 Z13 Z15 Z17 RF OUTPUT DUT Z10 Z12 Z14 Z19 C3 Z16 C4 Z18 T2 J2 Z20 C5 0.224″ x 0.253″ Microstrip 0.095″ x 0.253″ Microstrip 0.052″ x 0.253″ Microstrip 0.053″ x 0.080″ Microstrip 1.062″ x 0.080″ Microstrip Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55 * Line length includes microstrip bends Figure 2. MRF6VP2600HR6 Test Circuit Schematic Table 5. MRF6VP2600HR6 Test Circuit Component Designations and Values Part B1 C1 C2, C4 C3 C5 C6, C9 C7, C13, C20 C8 C10, C17, C18 C11, C22 C12, C21 C14 C15 C16 C19 C23, C24, C25 J1, J2 L1 L2 L3 L4* R1 T1 T2 Description 95 Ω, 100 MHz Long Ferrite Bead 47 pF Chip Capacitor 43 pF Chip Capacitors 100 pF Chip Capacitor 10 pF Chip Capacitor 2.2 μF, 50 V Chip Capacitors 10K pF Chip Capacitors 220 nF, 50 V Chip Capacitor 1000 pF Chip Capacitors 0.1 μF, 50 V Chip Capacitors 20K pF Chip Capacitors 10 μF, 35 V Tantalum Capacitor 22 μF, 35 V Tantalum Capacitor 47 μF, 50 V Electrolytic Capacitor 2.2 μF, Chip Capacitor 470 μF 63V Electrolytic Capacitors Jumpers from PCB to T1 & T2 17.5 nH, 6 Turn Inductor 8 Turn, #20 AWG ID = 0.125″ Inductor, Hand Wound 82 nH, Inductor 9 Turn, #18 AWG Inductor, Hand Wound 20 Ω, 3 W Axial Leaded Resistor Balun Balun Part Number 2743021447 ATC100B470JT500XT ATC100B430JT500XT ATC100B101JT500XT ATC100B7R5CT500XT C1825C225J5RAC ATC200B103KT50XT C1812C224J5RAC ATC100B102JT50XT CDR33BX104AKYS ATC200B203KT50XT T491D106K035AT T491X226K035AT 476KXM050M 2225X7R225KT3AB MCGPR63V477M13X26--RH Copper Foil B06T Copper Wire 1812SMS--82NJ Copper Wire 5093NW20R00J TUI--9 TUO--4 Vishay Comm Concepts Comm Concepts CoilCraft CoilCraft Manufacturer Fair--Rite ATC ATC ATC ATC Kemet ATC Kemet ATC Kemet ATC Kemet Kemet Illinois Cap ATC Multicomp *L4 is wrapped around R1. MRF6VP2600HR6 RF Device Data Freescale Semiconductor 3 B1 C16 + C13 C12 C11 C15 L3 L4, R1* C22 C21 C20 C14 C9 C8 C7 C6 J1 CUT OUT AREA L2 C10 T1 C18 C17 T2 C4 J2 C19 C1 L1 C2 C3 (on side) MRF6VP2600H 225 MHz Rev. 3 * L4 is wrapped around R1. Figure 3. MRF6VP2600HR6 Test Circuit Component Layout MRF6VP2600HR6 4 RF Device Data Freescale Semiconductor -- C23 C24 -- C25 -- C5 TYPICAL CHARACTERISTICS 1000 Ciss C, CAPACITANCE (pF) Coss 100 Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc ID, DRAIN CURRENT (AMPS) TJ = 200_C TJ = 150_C 10 TJ = 175_C 100 10 Crss 1 0 10 20 30 40 50 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) 1 1 TC = 25_C 10 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) 100 Note: Each side of device measured separately. Figure 4. Capacitance versus Drain-Source Voltage 26.5 26 Gps, POWER GAIN (dB) 25.5 25 24.5 24 23.5 23 22.5 10 100 Pout, OUTPUT POWER (WATTS) PULSED VDD = 50 Vdc, IDQ = 2600 mA f = 225 MHz Pulse Width = 100 μsec Duty Cycle = 20% Gps 80 70 ηD, DRAIN EFFICIENCY (%) Pout, OUTPUT POWER (dBm) 60 50 ηD 40 30 20 10 0 1000 64 Note: Each side of device measured separately. Figure 5. DC Safe Operating Area P3dB = 59.7 dBm (938 W) 62 P2dB = 59.1 dBm (827 W) 60 58 56 54 52 27 P1dB = 53.3 dBm (670 W) Ideal Actual VDD = 50 Vdc, IDQ = 2600 mA, f = 225 MHz Pulse Width = 12 μsec, Duty Cycle = 1% 28 29 30 31 32 33 34 35 36 37 38 Pin, INPUT POWER (dBm) Figure 6. Pulsed Power Gain and Drain Efficiency versus Output Power 26 25 Gps, POWER GAIN (dB) 50 V 24 23 22 21 0 40 V VDD = 50 Vdc IDQ = 2600 mA f = 225 MHz Pulse Width = 100 μsec Duty Cycle = 20% 100 200 300 35 V VDD = 30 V 400 500 600 700 45 V Gps, POWER GAIN (dB) 28 27 26 25 24 23 22 21 10 Figure 7. Pulsed CW Output Power versus Input Power 80 TC = --30_C 25_C 85_C VDD = 50 Vdc, IDQ = 2600 mA f = 225 MHz Pulse Width = 100 μsec Duty Cycle = 20% ηD Gps 70 60 50 40 30 20 10 1000 ηD, DRAIN EFFICIENCY (%) 100 Pout, OUTPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED Figure 8. Pulsed Power Gain versus Output Power Figure 9. Pulsed Power Gain and Drain Efficiency versus Output Power MRF6VP2600HR6 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS — TWO-TONE --20 IMD, INTERMODULATION DISTORTION (dBc) --30 --40 3rd Order --50 5th Order --60 --70 5 10 100 Pout, OUTPUT POWER (WATTS) PEP 700 7th Order IMD, INTERMODULATION DISTORTION (dBc) VDD = 50 Vdc, IDQ = 2600 mA, f1 = 222 MHz f2 = 228 MHz, Two--Tone Measurements --10 --20 --30 --40 --50 VDD = 50 Vdc, Pout = 500 W (PEP), IDQ = 2600 mA Two--Tone Measurements 3rd Order 5th Order 7th Order --60 0.1 1 TWO--TONE SPACING (MHz) 10 40 Figure 10. Intermodulation Distortion Products versus Output Power 26 25.5 Gps, POWER GAIN (dB) 25 24.5 24 23.5 20 IDQ = 2600 mA 2300 mA 2000 mA 1800 mA 1300 mA VDD = 50 Vdc, f1 = 222 MHz, f2 = 228 MHz Two--Tone Measurements, 6 MHz Tone Spacing 100 Pout, OUTPUT POWER (WATTS) PEP 700 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) --20 --25 --30 --35 --40 --45 Figure 11. Intermodulation Distortion Products versus Tone Spacing VDD = 50 Vdc, f1 = 222 MHz, f2 = 228 MHz Two--Tone Measurements, 6 MHz Tone Spacing IDQ = 1300 mA 2600 mA 1800 mA 2000 mA --50 20 2300 mA 100 Pout, OUTPUT POWER (WATTS) PEP 700 Figure 12. Two-Tone Power Gain versus Output Power Figure 13. Third Order Intermodulation Distortion versus Output Power MRF6VP2600HR6 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — OFDM 100 10 PROBABILITY (%) 1 (dB) 0.1 0.01 0.001 0.0001 --20 --30 --40 --50 --60 8K Mode DVB--T OFDM 64 QAM Data Carrier Modulation 5 Symbols --70 --80 --90 --100 --110 0 2 4 6 8 10 12 --5 --4 --3 --2 --1 0 1 2 3 4 5 PEAK--TO--AVERAGE (dB) f, FREQUENCY (MHz) ACPR Measured at 4 MHz Offset from Center Frequency 4 kHz BW 4 kHz BW 7.61 MHz 8K Mode DVB--T OFDM 64 QAM Data Carrier Modulation, 5 Symbols Figure 14. Single-Carrier DVB- OFDM -T ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 25.8 25.6 Gps, POWER GAIN (dB) 25.4 25.2 25 24.8 24.6 24.4 24.2 30 1300 mA VDD = 50 Vdc, f = 225 MHz 8K Mode OFDM, 64 QAM Data Carrier Modulation, 5 Symbols 100 Pout, OUTPUT POWER (WATTS) AVG. 200 IDQ = 2600 mA 2300 mA 2000 mA 1800 mA --56 --58 --60 --62 Figure 15. 8K Mode DVB- OFDM Spectrum -T VDD = 50 Vdc, f = 225 MHz 8K Mode OFDM, 64 QAM Data Carrier Modulation, 5 Symbols IDQ = 1300 mA --64 --66 --68 20 1800 mA 2000 mA 2300 mA 2600 mA 100 Pout, OUTPUT POWER (WATTS) AVG. 200 Figure 16. Single-Carrier DVB- OFDM Power -T Gain versus Output Power ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 45 40 35 30 25 20 15 30 Figure 17. Single-Carrier DVB- OFDM ACPR -T versus Output Power --56 --58 --60 ηD --62 Gps --64 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 25_C 85_C ACPR --30_C 25_C 85_C TC = --30_C VDD = 50 Vdc, IDQ = 2600 MHz f = 225 MHz, 8K Mode OFDM --66 64 QAM Data Carrier Modulation 5 Symbols --68 100 400 Pout, OUTPUT POWER (WATTS) AVG. Figure 18. Single-Carrier DVB- OFDM ACPR Power -T Gain and Drain Efficiency versus Output Power MRF6VP2600HR6 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS 109 108 MTTF (HOURS) 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 125 W Avg., and ηD = 28.5%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 19. MTTF versus Junction Temperature - CW - MRF6VP2600HR6 8 RF Device Data Freescale Semiconductor Zsource f = 225 MHz Zo = 10 Ω Zload f = 225 MHz VDD = 50 Vdc, IDQ = 2600 mA, Pout = 125 W Avg. f MHz 225 Zsource Ω 1.42 + j8.09 Zload Ω 4.45 + j1.16 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- Output Matching Network -Z source Z + load Figure 20. Series Equivalent Source and Load Impedance MRF6VP2600HR6 RF Device Data Freescale Semiconductor 9 COAX1 C18 C16 C14 C15 C17 + C1 C3 B1 C4 L1 R1 L3 T1 L4 C2 CUT OUT AREA + J1 + C5 C9 C10 L2 C6 C11 C12 COAX3 C13 COAX2 C7 C8 MRF6VP2600KH Rev. 2 88--108 MHz Figure 21. MRF6VP2600HR6 Test Circuit Component Layout — 88-108 MHz Table 6. MRF6VP2600HR6 Test Circuit Component Designations and Values — 88-108 MHz Part B1 C1 C2 C3, C13, C14 C4, C5, C6 C7, C8, C9, C10, C11, C12 C15 C16, C17 C18 J1 L1 L2 L3, L4 R1 T1 Coax1, Coax2 Coax3 PCB Description 95 Ω, 100 MHz Long Ferrite Bead 6.8 μF, 50 V Chip Capacitor 30 pF Chip Capacitor 1000 pF Chip Capacitors 1 μF, 100 V Chip Capacitors 3900 pF Chip Capacitors 4.7 μF, 100 V Chip Capacitor 470 μF, 63 V Electrolytic Capacitors 220 μF, 100 V Electrolytic Capacitor Jumper with Copper Tape 82 nH Inductor 8 Turn, #14 AWG ID=0.250″ Inductor, Hand Wound 8 nH Inductors 15 Ω, 1/4 W Chip Resistor Balun Transformer 25 Ω, Semi Rigid RF Cable, 3 mm Line, 16 cm Length 25 Ω, Semi Rigid RF Cable, 3 mm Line, 15 cm Length 0.030″, εr = 2.55 1812SMS--82NJ Copper Wire A03TKLC CRCW120615R0FKEA TUI--LF--9 UT--141C--25 UT--141C--25 GX0300--55--22 CoilCraft Freescale CoilCraft Vishay Comm Concepts Micro--Coax Micro--Coax Arlon Part Number 2743021447 C4532X7R1H685K ATC100B300JT500XT ATC100B102JT50XT GRM31CR72A105KA01L ATC700B392JT50X GRM55ER72A475KA01B MCGPR63V477M13X26--RH MCGPR100V227M16X26--RH Manufacturer Fair--Rite TDK ATC ATC Murata ATC Murata Multicomp Multicomp MRF6VP2600HR6 10 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — 88-108 MHz 30 29 28 Gps, POWER GAIN (dB) 27 26 25 24 23 22 21 20 100 200 300 400 98 MHz 88 MHz ηD VDD = 50 Vdc, IDQ = 150 mA 108 MHz Gps 108 MHz 98 MHz 88 MHz 85 80 70 65 60 55 50 45 40 35 500 600 700 800 ηD, DRAIN EFFICIENCY (%) ηD, DRAIN EFFICIENCY (%) 75 Pout, OUTPUT POWER (WATTS) Figure 22. Broadband CW Power Gain and Drain Efficiency versus Output Power — 88-108 MHz 27 26.5 26 Gps, POWER GAIN (dB) 25.5 25 24.5 24 23.5 23 22.5 22 86 90 94 98 102 106 ηD 82 81 80 Gps 79 78 77 76 75 74 73 72 110 VDD = 50 Vdc, IDQ = 150 mA Pout = 600 W, CW f, FREQUENCY (MHz) Figure 23. CW Power Gain and Drain Efficiency versus Frequency — 88-108 MHz MRF6VP2600HR6 RF Device Data Freescale Semiconductor 11 f = 88 MHz f = 108 MHz Zsource Zo = 25 Ω Zload f = 108 MHz f = 88 MHz VDD = 50 Vdc, IDQ = 150 mA, Pout = 600 W Avg. f MHz 88 98 108 Zsource Ω 3.20 + j14.50 4.20 + j15.00 4.00 + j15.00 Zload Ω 10.35 + j2.80 9.50 + j3.00 8.90 + j3.50 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- Output Matching Network -Z source Z + load Figure 24. Series Equivalent Source and Load Impedance — 88-108 MHz MRF6VP2600HR6 12 RF Device Data Freescale Semiconductor C11 B1 C9 C7 MRF6VP2600H 352.2 MHz Rev. 1 C20 C5 L3 C18 COAX3 COAX1 L1 C1 C3* C13 C14 C15 C2 C24* C4* CUT OUT AREA C17 C16 COAX2 L2 COAX4 C19 L4 B2 C10 C12 *Mounted on side C6 C8 -- C21 -- Figure 25. MRF6VP2600HR6 Test Circuit Component Layout — 352.2 MHz Table 7. MRF6VP2600HR6 Test Circuit Component Designations and Values — 352.2 MHz Part B1, B2 C1, C2 C3*, C24* C4* C5, C6 C7, C8 C9, C10 C11, C12 C13 C14, C15, C16, C17 C18, C19 C20, C21, C22, C23 Coax1, 2, 3, 4 L1, L2 L3, L4 *Mounted on side Description 47 Ω, 100 MHz Short Ferrite Beads 100 pF Chip Capacitors 22 pF Chip Capacitors 20 pF Chip Capacitor 2.2 μF Chip Capacitors 220 nF Chip Capacitors 0.1 μF Chip Capacitors 47 μF, 50 V Electrolytic Capacitors 39 pF, 500 V Chip Capacitor 240 pF Chip Capacitors 2.2 μF Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 25 Ω, Semi Rigid Coax, 2.2″ 2.5 nH, 1 Turn Inductors 10 Turn, #16 AWG ID=0.160″ Inductors, Hand Wound Part Number 2743019447 ATC100B101JT500XT ATC100B221JT300XT ATC100B200JT500XT C1825C225J5RAC--TU C1812C224K5RAC--TU CDR33BX104AKWS 476KXM050M MCM01--009DD390J--F ATC100B241JT200XT G2225X7R225KT3AB MCGPR63V477M13X26--RH UT141--25 A01TKLC Copper Wire ATC ATC ATC Kemet Kemet AVX Illinois Cap CDE ATC ATC Multicomp Precision Tube Company Coilcraft Freescale Manufacturer Fair--Rite RF Device Data Freescale Semiconductor -- -- C22 C23 MRF6VP2600HR6 13 TYPICAL CHARACTERISTICS — 352.2 MHz 23 22 Gps, POWER GAIN (dB) 21 20 19 18 17 16 15 10 100 Pout, OUTPUT POWER (WATTS) CW ηD VDD = 50 Vdc IDQ = 150 mA f = 352.2 MHz Gps 80 70 60 50 40 30 20 10 0 1000 ηD, DRAIN EFFICIENCY (%) Figure 26. CW Power Gain and Drain Efficiency versus Output Power MRF6VP2600HR6 14 RF Device Data Freescale Semiconductor Zo = 10 Ω f = 352.2 MHz Zsource f = 352.2 MHz Zload VDD = 50 Vdc, IDQ = 150 mA, Pout = 600 W CW f MHz 352.2 Zsource Ω 1.10 + j3.80 Zload Ω 2.26 + j3.57 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- Output Matching Network -Z source Z + load Figure 27. Series Equivalent Source and Load Impedance — 352.2 MHz MRF6VP2600HR6 RF Device Data Freescale Semiconductor 15 PACKAGE DIMENSIONS MRF6VP2600HR6 16 RF Device Data Freescale Semiconductor MRF6VP2600HR6 RF Device Data Freescale Semiconductor 17 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 Date Mar. 2008 July 2008 • Initial Release of Data Sheet • Removed Capable of Handling 5:1 VSWR bullet, p. 1 • Corrected Zsource and Zload values from 1.58 + j6.47 to 1.42 + j8.09 and 4.60 + j1.85 to 4.45 + j1.16 and replotted data in Fig. 21, Series Equivalent Source and Load Impedance, p. 9 2 Sept. 2008 • Added Note to Fig. 4, Capacitance versus Drain--Source Voltage and Fig. 5, DC Safe Operating Area to denote that each side of device is measured separately, p. 5 • Updated Fig. 5, DC Safe Operating Area, to show one side of the device, p. 5 • Figs. 21 and 27, Series Equivalent Source and Load Impedance, corrected Zsource copy to read “Test circuit impedance as measured from gate to gate, balanced configuration” and Zload copy to read “Test circuit impedance as measured from gate to gate, balanced configuration”, p. 9, 14 2.1 4 Nov. 2008 May 2009 • Corrected Figs. 21 and 27 Revision History Zload copy to read ”Test circuit impedance as measured from drain to drain, balanced configuration”, p. 9, 14 • Updated bullets in Features section to reflect consistent listing across products, p. 1 • Added thermal data for 352.2 MHz application to Table 2, Thermal Characteristics, p. 1 • Added Typical Performances table for 352.2 MHz application, p. 2 • Added Fig. 28, Test Circuit Component Layout -- 352.2 MHz and Table 7, Test Circuit Component Designations and Values -- 352.2 MHz, p. 15 • Added Fig. 29, CW Power Gain and Drain Efficiency versus Output Power -- 352.2 MHz p. 16 • Added Fig. 30, Series Equivalent Source and Load Impedance -- 352.2 MHz, p. 17 4.1 June 2009 • Changed “EKME630ELL471MK25S” part number to “MCGPR63V477M13X26--RH”, Table 5, Test Circuit Component Designations and Values and Table 6, Test Circuit Component Designations and Values — 88--108 MHz, p. 3, 11 • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Documentation, Tools and Software, p. 20 5 May 2010 • Changed 10--500 MHz to 2--500 MHz in Device Description box, p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1 • Added thermal data for 88--108 MHz application to Thermal Characteristics table, p. 1 • Added Typical Performance table for 88--108 MHz application, p. 2 • Removed Fig. 20, MTTF versus Junction Temperature -- Pulsed and renumbered accordingly, p. 8 • Replaced Fig. 22 Test Circuit Component Layout, Table 6. Test Circuit Component Designations and Values, the Typical Characteristic curves and Fig. 27 Series Impedance for 88--108 MHz with improved circuit performance figures. The 88--108 MHz application circuit is also now a more compact size., p. 10--12 5.1 July 2010 • Fig. 24, Series Impedance for 88--108 MHz, table and plot updated to reflect correct location of Zsource and Zload, p. 12 Description MRF6VP2600HR6 18 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1--8--1, Shimo--Meguro, Meguro--ku, Tokyo 153--0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008--2010. All rights reserved. MRF6VP2600HR6 Document Number: RF Device Data MRF6VP2600H Rev. 5.1, 7/2010 Freescale Semiconductor 19