MRF8P9300HR6_10

Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1.1, 7/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with frequencies from 860 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 2400 mA, Pout = 100 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.6 19.6 19.4 ηD (%) 35.4 35.6 35.8 Output PAR (dB) 6.0 6.0 5.9 ACPR (dBc) --37.3 --37.1 --36.7 MRF8P9300HR6 MRF8P9300HSR6 920-960 MHz, 100 W AVG., 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 425 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness • Typical Pout @ 1 dB Compression Point ≃ 326 Watts CW 880 MHz • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 2400 mA, Pout = 100 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 865 MHz 880 MHz 895 MHz Gps (dB) 20.5 20.7 20.6 ηD (%) 35.2 36.0 37.0 Output PAR (dB) 6.0 6.0 6.0 ACPR (dBc) --36.1 --36.1 --35.8 CASE 375D-05, STYLE 1 NI-1230 MRF8P9300HR6 CASE 375E-04, STYLE 1 NI-1230S MRF8P9300HSR6 Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB (Top View) Figure 1. Pin Connections Symbol VDSS VGS VDD Tstg TC TJ Value --0.5, +70 --6.0, +10 32, +0 --65 to +150 150 225 Unit Vdc Vdc Vdc °C °C °C 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2009--2010. All rights reserved. MRF8P9300HR6 MRF8P9300HSR6 1 RF Device Data Freescale Semiconductor Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 75°C, 100 W CW, 28 Vdc, IDQ = 2400 mA Case Temperature 80°C, 300 W CW, 28 Vdc, IDQ = 2400 mA Symbol RθJC Value (1,2) 0.22 0.20 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics (3) Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (3) (VDS = 10 Vdc, ID = 400 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, IDQ = 2400 mA, Measured in Functional Test) Drain--Source On--Voltage (3) (VGS = 10 Vdc, ID = 3 Adc) VGS(th) VGS(Q) VDS(on) 1.5 2.3 0.1 2.3 3.1 0.2 3 3.8 0.3 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2400 mA, Pout = 100 W Avg., f = 960 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Drain Efficiency Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps ηD PAR ACPR IRL 18.0 32.0 5.6 — — 19.4 35.8 5.9 --36.7 --16 21.0 — — --34.0 --10 dB % dB dBc dB Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2400 mA, Pout = 100 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.6 19.6 19.4 ηD (%) 35.4 35.6 35.8 Output PAR (dB) 6.0 6.0 5.9 ACPR (dBc) --37.3 --37.1 --36.7 IRL (dB) --9 --12 --16 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 3. Each side of device measured separately. 4. Part internally matched both on input and output. (continued) MRF8P9300HR6 MRF8P9300HSR6 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Pout @ 1 dB Compression Point, CW IMD Symmetry @ 310 W PEP, Pout where IMD Third Order Intermodulation  30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 40 MHz Bandwidth @ Pout = 100 W Avg. Gain Variation over Temperature (--30°C to +85°C) Output Power Variation over Temperature (--30°C to +85°C) Symbol P1dB IMDsym Min — — Typ 326 17 Max — — Unit W MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2400 mA, 920--960 MHz Bandwidth VBWres GF ∆G ∆P1dB — — — — 30 0.16 0.012 0.008 — — — — MHz dB dB/°C dBm/°C Typical Broadband Performance — 880 MHz (In Freescale 880 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2400 mA, Pout = 100 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 865 MHz 880 MHz 895 MHz Gps (dB) 20.5 20.7 20.6 ηD (%) 35.2 36.0 37.0 Output PAR (dB) 6.0 6.0 6.0 ACPR (dBc) --36.1 --36.1 --35.8 IRL (dB) --11 --14 --16 MRF8P9300HR6 MRF8P9300HSR6 RF Device Data Freescale Semiconductor 3 B2 VGS C43 C17 C15 C21 C51 C19 C13* C3 C5 C4 C1 C2 C6 C18 C20 C16 C14 C42 C46 C10* C11* C7 C12* C9 CUT OUT AREA C8 C41 C37 C39 C35 C33 C47 C49 C53 C45 VDD C27 C25 C31 C29 C30 C28 C23 C22 C24 C26 C38 C36 C40 C34 C32 C50 C52 C44 VGS B1 C48 MRF8P9300H Rev. 2 VDD *C10, C11, C12, and C13 are mounted vertically. Figure 2. MRF8P9300HR6(HSR6) Test Circuit Component Layout Table 5. MRF8P9300HR6(HSR6) Test Circuit Component Designations and Values Part B1, B2 C1 C2, C3, C16, C17, C26, C27 C4, C5, C28, C29, C32, C33, C34, C35 C6, C7 C8, C9 C10, C11, C12, C13 C14, C15, C42, C43 C18, C19 C20, C21 C22, C23 C24, C25 C30, C31 C36, C37 C38, C39 C40, C41 C44, C45 C46, C47 C48, C49, C50, C51 C52, C53 PCB Description Short RF Bead 0.2 pF Chip Capacitor 39 pF Chip Capacitors 1.1 pF Chip Capacitors 2.7 pF Chip Capacitors 5.1 pF Chip Capacitors 3.0 pF Chip Capacitors 10 pF Chip Capacitors 2.2 μF, 50 V Chip Capacitors 47 μF, 50 V Electrolytic Capacitors 1.0 pF Chip Capacitors 0.5 pF Chip Capacitors 0.8 pF Chip Capacitors 4.7 pF Chip Capacitors 4.3 pF Chip Capacitors 11 pF Chip Capacitors 20 pF Chip Capacitors 30 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 0.030″, εr = 3.50 Part Number 2743019447 ATC100B0R2BT500XT ATC100B390JT500XT ATC100B1R1BT500XT ATC100B2R7BT500XT ATC100B5R1CT500XT ATC100B3R0CT500XT ATC100B100JT500XT C1825C225J5RAC--TU 476KXM050M ATC100B1R0BT500XT ATC100B0R5BT500XT ATC100B0R8BT500XT ATC100B4R7CT500XT ATC100B4R3CT500XT ATC100B110JT500XT ATC100B200JT500XT ATC100B300JT500XT GRM55DR61H106KA88L MCGPR63V477M13X26--RH RF--35 Manufacturer Fair--Rite ATC ATC ATC ATC ATC ATC ATC Kemet Illinois Capacitor ATC ATC ATC ATC ATC ATC ATC ATC Murata Multicomp Taconic MRF8P9300HR6 MRF8P9300HSR6 4 RF Device Data Freescale Semiconductor Devices are tested in a parallel configuration Single--ended λ λ 4 4 Quadrature combined λ 4 Doherty λ 2 λ 2 Push--pull Figure 3. Possible Circuit Topologies MRF8P9300HR6 MRF8P9300HSR6 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS ηD, DRAIN EFFICIENCY (%) 20 19 Gps, POWER GAIN (dB) 18 17 16 PARC 15 14 820 840 ACPR 860 880 900 920 940 960 980 f, FREQUENCY (MHz) --35 --40 IRL Gps ηD 50 40 0 ACPR (dBc) --10 --20 --30 IRL, INPUT RETURN LOSS (dB) VDD = 28 Vdc, Pout = 100 W (Avg.), IDQ = 2400 mA 30 Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% 20 Probability on CCDF --30 0 PARC (dB) --1 --2 --3 Figure 4. Output Peak- -Average Ratio Compression (PARC) -toBroadband Performance @ Pout = 100 Watts Avg. --10 --20 --30 IM5--U --40 --50 --60 IM7--L 1 10 TWO--TONE SPACING (MHz) 100 IM5--L IMD, INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, Pout = 310 W (PEP), IDQ = 2400 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 940 MHz IM3--U IM3--L IM7--U Figure 5. Intermodulation Distortion Products versus Two-Tone Spacing 21 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 20 Gps, POWER GAIN (dB) 19 18 17 16 15 1 0 --1 --2 --3 --4 --5 --2 dB = 110.0 W PARC VDD = 28 Vdc, IDQ = 2400 mA, f = 940 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 45 65 85 105 125 145 165 185 10 0 205 --1 dB = 80.0 W ηD 60 ηD, DRAIN EFFICIENCY (%) 50 --20 --25 --30 --35 --40 --45 --50 ACPR (dBc) ACPR 40 Gps --3 dB = 155.2 W 30 20 Pout, OUTPUT POWER (WATTS) Figure 6. Output Peak- -Average Ratio -toCompression (PARC) versus Output Power MRF8P9300HR6 MRF8P9300HSR6 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 21 20 Gps, POWER GAIN (dB) 19 18 17 16 15 f = 920 MHz Gps 960 MHz 940 MHz 960 MHz 940 MHz ACPR ηD 60 50 ηD, DRAIN EFFICIENCY (%) 40 30 20 920 MHz 10 0 400 0 --10 --20 --30 --40 --50 --60 ACPR (dBc) +ACPR in 3.84 MHz Integrated BW 1.8 3.6 VDD = 28 Vdc, IDQ = 2400 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 25 20 15 GAIN (dB) 10 5 0 --5 --10 --15 600 VDD = 28 Vdc Pin = 0 dBm IDQ = 2400 mA 700 800 900 1000 1100 IRL Gain 15 10 5 0 --5 --10 --15 --20 --25 1200 IRL (dB) 3.84 MHz Channel BW 0 f, FREQUENCY (MHz) Figure 8. Broadband Frequency Response W-CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0 1 2 3 4 5 6 7 8 9 10 PEAK--TO--AVERAGE (dB) 0.01 0.001 0.0001 10 0 --10 --20 --30 --40 --50 --60 --70 --80 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 5.4 7.2 9 f, FREQUENCY (MHz) --ACPR in 3.84 MHz Integrated BW Figure 9. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal Figure 10. Single-Carrier W-CDMA Spectrum MRF8P9300HR6 MRF8P9300HSR6 RF Device Data Freescale Semiconductor 7 VDD = 28 Vdc, IDQA = IDQB = 1200 mA, Pout = 100 W Avg. f MHz 840 860 880 900 920 Zsource Ω 1.74 -- j1.71 1.74 -- j1.42 1.59 -- j1.19 1.46 -- j0.91 1.51 -- j0.63 Zload Ω 0.98 -- j0.97 0.95 -- j0.95 0.92 -- j0.92 0.90 -- j0.90 0.87 -- j0.87 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Input Matching Network Z source Z load Figure 11. Series Equivalent Source and Load Impedance MRF8P9300HR6 MRF8P9300HSR6 8 RF Device Data Freescale Semiconductor ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 28 Vdc, IDQ = 1200 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 58 57 Pout, OUTPUT POWER (dBm) 56 55 54 53 52 51 50 49 48 47 27 28 29 30 31 32 33 34 35 36 37 38 f = 920 MHz Actual f = 940 MHz f = 960 MHz Ideal Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V f (MHz) 920 940 960 P1dB Watts 229 214 219 dBm 53.6 53.3 53.4 Test Impedances per Compression Level f (MHz) 920 940 960 P1dB P1dB P1dB Zsource Ω 1.58 -- j2.40 1.77 -- j3.02 1.98 -- j3.46 Zload Ω 0.84 -- j1.69 0.76 -- j1.90 0.75 -- j1.51 Figure 12. Pulsed CW Output Power versus Input Power @ 28 V NOTE: Measurement made on a per side basis. MRF8P9300HR6 MRF8P9300HSR6 RF Device Data Freescale Semiconductor 9 B2 C22 C16 C18 C44 C48 C46 C52 C34 C50 C54 C20 C4 C2 C6 C5 C7 C3 C21 C17 C15 C19 C14 C12 C10 CUT OUT AREA C9 C11 C13 C42 C40 C38 C28 C26 C8 C36 C32 C30 C31 C29 C24 C23 C25 C33 C51 C27 C1 C37 C39 C41 C35 C43 C47 C45 C53 C49 MRF8P9300H Rev. 2 B1 Figure 13. MRF8P9300HR6(HSR6) Test Circuit Component Layout — 865-895 MHz Table 6. MRF8P9300HR6(HSR6) Test Circuit Component Designations and Values — 865-895 MHz Part B1, B2 C1 C2 C3, C4, C17, C18, C27, C28 C5, C6, C29, C30, C33, C34, C35, C36 C7, C8, C37, C38 C9, C10 C11, C12, C13, C14 C15, C16, C43, C44 C19, C20 C21, C22 C23, C24 C25, C26 C31, C32 C39, C40 C41, C42 C45, C46 C47, C48 C49, C50, C51, C52 C53, C54 PCB Description Short Ferrite bead 0.2 pF Chip Capacitor 0.3 pF Chip Capacitor 39 pF Chip Capacitors 1.1 pF Chip Capacitors 4.3 pF Chip Capacitors 7.5 pF Chip Capacitors 3.0 pF Chip Capacitors 10 pF Chip Capacitors 2.2 μF, 50 V Chip Capacitors 47 μF, 50 V Electrolytic Capacitors 1.0 pF Chip Capacitors 0.5 pF Chip Capacitors 0.8 pF Chip Capacitors 4.7 pF Chip Capacitors 11 pF Chip Capacitors 20 pF Chip Capacitors 30 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 0.030″, εr = 3.5 Part Number 2743019447 ATC100B0R2CT500XT ATC100B0R3CT500XT ATC100B390JT500XT ATC100B1R1JP500XT ATC100B4R3JP500XT ATC100B7R5JP500XT ATC100B3R0JP500XT ATC100B100JT500XT C1825C225J5RAC 476KXM063M ATC100B1R0JP500XT ATC100B0R5CT500XT ATC100B0R8JP500XT ATC100B4R7JP500XT ATC100B110JT500XT ATC100B200JT500XT ATC100B300JT500XT GRM55DR61HT106KA88L KME63VB471M12x25LL RF--35 Manufacturer Fair--Rite ATC ATC ATC ATC ATC ATC ATC ATC Kemet Illinois Capacitor ATC ATC ATC ATC ATC ATC ATC Murata Chemi--Con Taconic MRF8P9300HR6 MRF8P9300HSR6 10 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — 865-895 MHz VDD = 28 Vdc, Pout = 100 W (Avg.) 21.5 I = 2400 mA, Single--Carrier W--CDMA DQ 21 Gps, POWER GAIN (dB) 20.5 20 19.5 19 18.5 18 17.5 17 820 840 ACPR 860 880 900 920 940 PARC 960 IRL 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF Gps ηD, DRAIN EFFICIENCY (%) 22 44 ηD 41 38 35 32 --30 ACPR (dBc) --32 --34 --36 --38 --40 980 0 --5 --10 --15 --20 --25 IRL, INPUT RETURN LOSS (dB) --0.5 --1.5 --2 --2.5 --3 PARCz (dB) --1 f, FREQUENCY (MHz) Figure 14. Output Peak- -Average Ratio Compression (PARC) -toBroadband Performance @ Pout = 100 Watts Avg. 22 21 Gps, POWER GAIN (dB) 20 19 18 17 16 ACPR 1 10 Pout, OUTPUT POWER (WATTS) AVG. 865 MHz 60 ηD 50 ηD, DRAIN EFFICIENCY (%) 40 30 20 895 MHz 880 MHz 865 MHz 100 10 0 --10 --20 --30 --40 --50 --60 ACPR (dBc) VDD = 28 Vdc, IDQ = 2400 mA, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth Gps 880 MHz 895 MHz Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0 300 Figure 15. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 24 Gain 20 16 GAIN (dB) 12 IRL 8 4 0 620 VDD = 28 Vdc Pin = 0 dBm IDQ = 2400 mA 690 760 830 900 970 1040 1110 --16 --20 --24 1180 --4 --8 --12 IRL (dB) 0 f, FREQUENCY (MHz) Figure 16. Broadband Frequency Response MRF8P9300HR6 MRF8P9300HSR6 RF Device Data Freescale Semiconductor 11 VDD = 28 Vdc, IDQ = 2400 mA, Pout = 100 W Avg. f MHz 820 840 860 880 900 920 940 960 980 Zsource Ω 0.45 -- j0.78 0.42 + j0.34 0.39 + j0.05 0.40 + j0.05 0.49 + j0.84 0.75 + j1.32 1.58 + j1.77 2.16 + j0.62 1.37 + j0.64 Zload Ω 1.72 -- j0.73 1.67 -- j0.39 1.59 -- j0.06 1.44 -- j0.17 1.35 + j0.35 1.30 + j0.61 1.32 + 0.93 1.27 + j1.14 1.21 + j1.30 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Input Matching Network Z source Z load Figure 17. Series Equivalent Source and Load Impedance — 865-895 MHz MRF8P9300HR6 MRF8P9300HSR6 12 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8P9300HR6 MRF8P9300HSR6 RF Device Data Freescale Semiconductor 13 MRF8P9300HR6 MRF8P9300HSR6 14 RF Device Data Freescale Semiconductor MRF8P9300HR6 MRF8P9300HSR6 RF Device Data Freescale Semiconductor 15 MRF8P9300HR6 MRF8P9300HSR6 16 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 Date Nov. 2009 May 2010 • Initial Release of Data Sheet • Changed ESD Human Body Model rating from Class 1C to Class 2 to reflect recent ESD test results of the device, p. 2 • Added Alternate Characterization for 865--895 MHz Frequency Band as follows: -- Typical Performance bullet, p. 1 -- Typical Broadband Performance table, p. 3 -- Fig. 13, Test Circuit Component Layout and Table 6, Test Circuit Component Designations and Values, p. 10 -- Fig. 14, Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 100 Watts Avg., p. 11 -- Fig. 15, Single--Carrier W--CDMA Power Gain, Drain, Efficiency and ACPR versus Output Power, p. 11 -- Fig. 16, Broadband Frequency Response, p. 11 -- Fig. 17, Series Equivalent Source and Load Impedance, p. 12 1.1 July 2010 • Changed 850 MHz to 880 MHz in the Typical Broadband Performance table for the 865--895 MHz frequency band, p. 3 • Added connection pad identifiers to Fig. 2, Test Circuit Component Layout, p. 4 Description MRF8P9300HR6 MRF8P9300HSR6 RF Device Data Freescale Semiconductor 17 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009--2010. All rights reserved. MRF8P9300HR6 MRF8P9300HSR6 1Rev. 1.1, 7/2010 8 Document Number: MRF8P9300H RF Device Data Freescale Semiconductor