Freescale Semiconductor
Technical Data
Document Number: MRF8P9300H
Rev. 1.1, 7/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF8P9300HR6
MRF8P9300HSR6
Designed for CDMA and multicarrier GSM base station applications with
frequencies from 860 to 960 MHz. Can be used in Class AB and Class C for all
typical cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
2400 mA, Pout = 100 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz
19.6
35.4
6.0
--37.3
940 MHz
19.6
35.6
6.0
--37.1
960 MHz
19.4
35.8
5.9
--36.7
920--960 MHz, 100 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 425 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
• Typical Pout @ 1 dB Compression Point ≃ 326 Watts CW
880 MHz
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
2400 mA, Pout = 100 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
865 MHz
20.5
35.2
6.0
--36.1
880 MHz
20.7
36.0
6.0
--36.1
895 MHz
20.6
37.0
6.0
--35.8
CASE 375D--05, STYLE 1
NI--1230
MRF8P9300HR6
CASE 375E--04, STYLE 1
NI--1230S
MRF8P9300HSR6
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +70
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
TC
150
°C
TJ
225
°C
Case Operating Temperature
Operating Junction Temperature
(1,2)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8P9300HR6 MRF8P9300HSR6
1
Table 2. Thermal Characteristics
Characteristic
Symbol
Thermal Resistance, Junction to Case
Case Temperature 75°C, 100 W CW, 28 Vdc, IDQ = 2400 mA
Case Temperature 80°C, 300 W CW, 28 Vdc, IDQ = 2400 mA
Value (1,2)
RθJC
Unit
°C/W
0.22
0.20
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 70 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage (3)
(VDS = 10 Vdc, ID = 400 μAdc)
VGS(th)
1.5
2.3
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ = 2400 mA, Measured in Functional Test)
VGS(Q)
2.3
3.1
3.8
Vdc
Drain--Source On--Voltage (3)
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Characteristic
Off Characteristics (3)
On Characteristics
Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2400 mA, Pout = 100 W Avg., f = 960 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
18.0
19.4
21.0
dB
Drain Efficiency
ηD
32.0
35.8
—
%
PAR
5.6
5.9
—
dB
ACPR
—
--36.7
--34.0
dBc
IRL
—
--16
--10
dB
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2400 mA, Pout = 100 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
920 MHz
19.6
35.4
6.0
--37.3
--9
940 MHz
19.6
35.6
6.0
--37.1
--12
960 MHz
19.4
35.8
5.9
--36.7
--16
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Each side of device measured separately.
4. Part internally matched both on input and output.
(continued)
MRF8P9300HR6 MRF8P9300HSR6
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Symbol
Characteristic
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2400 mA, 920--960 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
326
—
—
17
—
30
—
W
IMD Symmetry @ 310 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
Gain Flatness in 40 MHz Bandwidth @ Pout = 100 W Avg.
GF
—
0.16
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.012
—
dB/°C
∆P1dB
—
0.008
—
dBm/°C
Output Power Variation over Temperature
(--30°C to +85°C)
MHz
MHz
Typical Broadband Performance — 880 MHz (In Freescale 880 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2400 mA, Pout =
100 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
865 MHz
20.5
35.2
6.0
--36.1
--11
880 MHz
20.7
36.0
6.0
--36.1
--14
895 MHz
20.6
37.0
6.0
--35.8
--16
MRF8P9300HR6 MRF8P9300HSR6
RF Device Data
Freescale Semiconductor
3
B2
C53
VGS
C47
C43
C17 C15
C49
VDD
C45
C21
C51
C19
C41
C13*
C7
C1
C8
C6
C2
C39
C9
C5
C4
C18
C10*
C11*
C27
C37
C12*
CUT OUT AREA
C3
C33
C25
C35
C23
C31 C29
C30 C28
C38
C22
C34
C24
C36
C26
C40
C32
C52
C50
C20
C42
C16 C14
C46
C44
VGS
B1
C48
VDD
MRF8P9300H
Rev. 2
*C10, C11, C12, and C13 are mounted vertically.
Figure 2. MRF8P9300HR6(HSR6) Test Circuit Component Layout
Table 5. MRF8P9300HR6(HSR6) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Short RF Bead
2743019447
Fair--Rite
C1
0.2 pF Chip Capacitor
ATC100B0R2BT500XT
ATC
C2, C3, C16, C17, C26, C27
39 pF Chip Capacitors
ATC100B390JT500XT
ATC
C4, C5, C28, C29, C32, C33, C34, C35
1.1 pF Chip Capacitors
ATC100B1R1BT500XT
ATC
C6, C7
2.7 pF Chip Capacitors
ATC100B2R7BT500XT
ATC
C8, C9
5.1 pF Chip Capacitors
ATC100B5R1CT500XT
ATC
C10, C11, C12, C13
3.0 pF Chip Capacitors
ATC100B3R0CT500XT
ATC
C14, C15, C42, C43
10 pF Chip Capacitors
ATC100B100JT500XT
ATC
C18, C19
2.2 μF, 50 V Chip Capacitors
C1825C225J5RAC--TU
Kemet
C20, C21
47 μF, 50 V Electrolytic Capacitors
476KXM050M
Illinois Capacitor
C22, C23
1.0 pF Chip Capacitors
ATC100B1R0BT500XT
ATC
C24, C25
0.5 pF Chip Capacitors
ATC100B0R5BT500XT
ATC
C30, C31
0.8 pF Chip Capacitors
ATC100B0R8BT500XT
ATC
C36, C37
4.7 pF Chip Capacitors
ATC100B4R7CT500XT
ATC
C38, C39
4.3 pF Chip Capacitors
ATC100B4R3CT500XT
ATC
C40, C41
11 pF Chip Capacitors
ATC100B110JT500XT
ATC
C44, C45
20 pF Chip Capacitors
ATC100B200JT500XT
ATC
C46, C47
30 pF Chip Capacitors
ATC100B300JT500XT
ATC
C48, C49, C50, C51
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C52, C53
470 μF, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
PCB
0.030″, εr = 3.50
RF--35
Taconic
MRF8P9300HR6 MRF8P9300HSR6
4
RF Device Data
Freescale Semiconductor
Devices are tested in a
parallel configuration
Single--ended
λ
4
λ
Quadrature combined
4
λ
4
λ
λ
2
2
Doherty
Push--pull
Figure 3. Possible Circuit Topologies
MRF8P9300HR6 MRF8P9300HSR6
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
VDD = 28 Vdc, Pout = 100 W (Avg.), IDQ = 2400 mA 30
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @ 0.01%
20
Probability on CCDF
18
17
IRL
16
0
--30
PARC
--35
15
ACPR
14
820
840
--40
860
880
900
920
940
960
--10
--20
--30
980
0
--1
--2
PARC (dB)
40
ηD
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
19
ηD, DRAIN
EFFICIENCY (%)
50
Gps
ACPR (dBc)
20
--3
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 4. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 100 Watts Avg.
--10
VDD = 28 Vdc, Pout = 310 W (PEP), IDQ = 2400 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
--20
IM3--U
--30
IM5--U
--40
IM5--L
--50
--60
IM3--L
IM7--U
IM7--L
1
10
100
TWO--TONE SPACING (MHz)
20
0
19
18
17
16
15
ηD
--1 dB = 80.0 W
60
--20
50
--25
ACPR 40
--1
Gps
--2
30
--3 dB = 155.2 W
--2 dB = 110.0 W
--3
20
PARC
VDD = 28 Vdc, IDQ = 2400 mA, f = 940 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
--4
--5
45
65
85
105
125
145
165
185
10
0
205
--30
--35
ACPR (dBc)
1
ηD, DRAIN EFFICIENCY (%)
21
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
--40
--45
--50
Pout, OUTPUT POWER (WATTS)
Figure 6. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8P9300HR6 MRF8P9300HSR6
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
20
f = 920 MHz
19
Gps
18
940 MHz
16
ACPR
960 MHz
940 MHz
1
0
50
--10
40
30
VDD = 28 Vdc, IDQ = 2400 mA
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01%
Probability on CCDF
17
15
960 MHz
60
20
920 MHz
10
10
0
400
100
--20
--30
--40
ACPR (dBc)
ηD
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
21
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
15
25
Gain
10
15
5
10
0
--5
5
IRL
0
--5
--10
--15
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 2400 mA
--10
--15
600
--20
800
700
IRL (dB)
GAIN (dB)
20
900
1000
1100
--25
1200
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 9. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 10. Single--Carrier W--CDMA Spectrum
MRF8P9300HR6 MRF8P9300HSR6
RF Device Data
Freescale Semiconductor
7
VDD = 28 Vdc, IDQA = IDQB = 1200 mA, Pout = 100 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
840
1.74 -- j1.71
0.98 -- j0.97
860
1.74 -- j1.42
0.95 -- j0.95
880
1.59 -- j1.19
0.92 -- j0.92
900
1.46 -- j0.91
0.90 -- j0.90
920
1.51 -- j0.63
0.87 -- j0.87
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 11. Series Equivalent Source and Load Impedance
MRF8P9300HR6 MRF8P9300HSR6
8
RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 1200 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
58
Pout, OUTPUT POWER (dBm)
57
Ideal
56
55
54
Actual
53
52
51
f = 920 MHz
50
f = 940 MHz
f = 960 MHz
49
48
47
27
28
29
30
31
32
33
34
35
36
37
38
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
f
(MHz)
Watts
dBm
920
229
53.6
940
214
53.3
960
219
53.4
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
920
P1dB
1.58 -- j2.40
0.84 -- j1.69
940
P1dB
1.77 -- j3.02
0.76 -- j1.90
960
P1dB
1.98 -- j3.46
0.75 -- j1.51
Figure 12. Pulsed CW Output Power
versus Input Power @ 28 V
NOTE: Measurement made on a per side basis.
MRF8P9300HR6 MRF8P9300HSR6
RF Device Data
Freescale Semiconductor
9
B2
C22
C44 C48
C16
C18
C8
C42
C14
C12
C40
C38
C10
C6
C5
C9
C1
C7
C3
C19
C11
C13
CUT OUT AREA
C2
C54
C46
C20
C4
C50
C52
C34
C28
C26
C36
C24
C32 C30
C31 C29
C37
C23
C35
C39
C41
C25
C27
C33
C51
C21
C17
C15
C43 C47
C45
B1
C53
C49
MRF8P9300H
Rev. 2
Figure 13. MRF8P9300HR6(HSR6) Test Circuit Component Layout — 865--895 MHz
Table 6. MRF8P9300HR6(HSR6) Test Circuit Component Designations and Values — 865--895 MHz
Part
Description
Part Number
Manufacturer
B1, B2
Short Ferrite bead
2743019447
Fair--Rite
C1
0.2 pF Chip Capacitor
ATC100B0R2CT500XT
ATC
C2
0.3 pF Chip Capacitor
ATC100B0R3CT500XT
ATC
C3, C4, C17, C18, C27, C28
39 pF Chip Capacitors
ATC100B390JT500XT
ATC
C5, C6, C29, C30, C33, C34, C35, C36
1.1 pF Chip Capacitors
ATC100B1R1JP500XT
ATC
C7, C8, C37, C38
4.3 pF Chip Capacitors
ATC100B4R3JP500XT
ATC
C9, C10
7.5 pF Chip Capacitors
ATC100B7R5JP500XT
ATC
C11, C12, C13, C14
3.0 pF Chip Capacitors
ATC100B3R0JP500XT
ATC
C15, C16, C43, C44
10 pF Chip Capacitors
ATC100B100JT500XT
ATC
C19, C20
2.2 μF, 50 V Chip Capacitors
C1825C225J5RAC
Kemet
C21, C22
47 μF, 50 V Electrolytic Capacitors
476KXM063M
Illinois Capacitor
C23, C24
1.0 pF Chip Capacitors
ATC100B1R0JP500XT
ATC
C25, C26
0.5 pF Chip Capacitors
ATC100B0R5CT500XT
ATC
C31, C32
0.8 pF Chip Capacitors
ATC100B0R8JP500XT
ATC
C39, C40
4.7 pF Chip Capacitors
ATC100B4R7JP500XT
ATC
C41, C42
11 pF Chip Capacitors
ATC100B110JT500XT
ATC
C45, C46
20 pF Chip Capacitors
ATC100B200JT500XT
ATC
C47, C48
30 pF Chip Capacitors
ATC100B300JT500XT
ATC
C49, C50, C51, C52
10 μF, 50 V Chip Capacitors
GRM55DR61HT106KA88L
Murata
C53, C54
470 μF, 63 V Electrolytic Capacitors
KME63VB471M12x25LL
Chemi--Con
PCB
0.030″, εr = 3.5
RF--35
Taconic
MRF8P9300HR6 MRF8P9300HSR6
10
RF Device Data
Freescale Semiconductor
38
20.5
35
20
19.5
19
32
Gps
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
IRL
18.5
--30
0
--32
--5
--34
--36
18
17.5
ACPR
17
820
840
860
--38
PARC
880
900
920
940
--40
960
--10
--15
--20
--25
980
--0.5
--1
--1.5
--2
--2.5
PARCz (dB)
Gps, POWER GAIN (dB)
41
ηD
IRL, INPUT RETURN LOSS (dB)
44
VDD = 28 Vdc, Pout = 100 W (Avg.)
21.5 I = 2400 mA, Single--Carrier W--CDMA
DQ
21
ACPR (dBc)
22
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS — 865--895 MHz
--3
f, FREQUENCY (MHz)
Figure 14. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 100 Watts Avg.
Gps, POWER GAIN (dB)
21
ηD
Gps
20
865 MHz
19
--10
20
895 MHz
880 MHz
17
16
50
30
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
18
0
40
895 MHz
880 MHz
60
865 MHz
ACPR
1
10
10
0
300
100
--20
--30
--40
ACPR (dBc)
VDD = 28 Vdc, IDQ = 2400 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
ηD, DRAIN EFFICIENCY (%)
22
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 15. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
0
24
20
--4
16
--8
--12
12
IRL
--16
8
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 2400 mA
4
0
620
IRL (dB)
GAIN (dB)
Gain
690
760
830
900
970
1040
1110
--20
--24
1180
f, FREQUENCY (MHz)
Figure 16. Broadband Frequency Response
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VDD = 28 Vdc, IDQ = 2400 mA, Pout = 100 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
820
0.45 -- j0.78
1.72 -- j0.73
840
0.42 + j0.34
1.67 -- j0.39
860
0.39 + j0.05
1.59 -- j0.06
880
0.40 + j0.05
1.44 -- j0.17
900
0.49 + j0.84
1.35 + j0.35
920
0.75 + j1.32
1.30 + j0.61
940
1.58 + j1.77
1.32 + 0.93
960
2.16 + j0.62
1.27 + j1.14
980
1.37 + j0.64
1.21 + j1.30
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 17. Series Equivalent Source and Load Impedance — 865--895 MHz
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PACKAGE DIMENSIONS
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RF Device Data
Freescale Semiconductor
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MRF8P9300HR6 MRF8P9300HSR6
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PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Nov. 2009
• Initial Release of Data Sheet
1
May 2010
• Changed ESD Human Body Model rating from Class 1C to Class 2 to reflect recent ESD test results of the
device, p. 2
• Added Alternate Characterization for 865--895 MHz Frequency Band as follows:
-- Typical Performance bullet, p. 1
-- Typical Broadband Performance table, p. 3
-- Fig. 13, Test Circuit Component Layout and Table 6, Test Circuit Component Designations and Values, p. 10
-- Fig. 14, Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 100 Watts
Avg., p. 11
-- Fig. 15, Single--Carrier W--CDMA Power Gain, Drain, Efficiency and ACPR versus Output Power, p. 11
-- Fig. 16, Broadband Frequency Response, p. 11
-- Fig. 17, Series Equivalent Source and Load Impedance, p. 12
1.1
July 2010
• Changed 850 MHz to 880 MHz in the Typical Broadband Performance table for the 865--895 MHz frequency
band, p. 3
• Added connection pad identifiers to Fig. 2, Test Circuit Component Layout, p. 4
MRF8P9300HR6 MRF8P9300HSR6
RF Device Data
Freescale Semiconductor
17
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MRF8P9300HR6 MRF8P9300HSR6
Document Number: MRF8P9300H
Rev. 1.1, 7/2010
18
RF Device Data
Freescale Semiconductor
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