MRF9080LR3_08

Freescale Semiconductor Technical Data Document Number: MRF9080 Rev. 8, 10/2008 N - Channel Enhancement - Mode Lateral MOSFET Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. • Typical Performance for GSM Frequencies, 960 MHz, 26 Volts Output Power @ P1db: 75 Watts Power Gain @ P1db: 18.5 dB Efficiency @ P1db: 55% • Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF9080LR3 920 - 960 MHz, 75 W, 26 V LATERAL N - CHANNEL RF POWER MOSFET CASE 465 - 06, STYLE 1 NI - 780 Table 1. Maximum Ratings Rating Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 250 1.43 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 0.7 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum) © Freescale Semiconductor, Inc., 2008. All rights reserved. MRF9080LR3 1 RF Device Data Freescale Semiconductor LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor LIFETIME BUY Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vds, VGS = 0) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 ) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mAdc) VGS(th) VGS(Q) VDS(on) gfs 2.0 — — — — 3.7 0.19 8.0 4.0 — 0.4 — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit LIFETIME BUY Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 6 Adc) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Power Output, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 600 mA, f = 960 MHz) Common - Source Amplifier Power Gain @ 70 W (Min) (VDD = 26 Vdc, IDQ = 600 mA, f = 960 MHz) Drain Efficiency @ Pout = 70 W (VDD = 26 Vdc, IDQ = 600 mA, f = 960 MHz) Drain Efficiency @ P1dB (VDD = 26 Vdc, IDQ = 600 mA, f = 960 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 70 W, IDQ = 600 mA, f = 960 MHz) Dynamic Characteristics (1) Coss Crss — — 73 2.9 — — pF pF Functional Tests (In Freescale Test Fixture, 50 ohm system) P1dB Gps η1 η2 IRL 68 17 47 — 9.5 75 18.5 52 55 12.5 — 20 — — — W dB % % dB 1. Part is internally input matched. MRF9080LR3 2 RF Device Data Freescale Semiconductor LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 VGG R3 + C7 R2 C6 R1 C18 + C17 VDD C5 C11 C12 C13 DUT C15 C14 C8 C9 C10 C16 C1 RF INPUT C2 C3 RF OUTPUT C4 LIFETIME BUY Figure 1. Broadband GSM 900 Test Circuit Schematic Table 5. Broadband GSM 900 Test Circuit Component Designations and Values Part C1 C2 C3 C4, C5, C9, C10, C12, C13 C6, C16, C17 C7, C18 C8, C11 C14 C15 R1, R2, R3 Raw PCB Material Description 4.7 pF Chip Capacitor 2.7 pF Chip Capacitor 1.5 pF Chip Capacitor 5.6 pF Chip Capacitors 22 pF Chip Capacitors 10 μF, 35 V Tantalum Chip Capacitors 10 pF Chip Capacitors 0.8 pF Chip Capacitor 8.2 pF Chip Capacitor 1.0 kΩ, 1/8 W Chip Resistors 30 mil Glass Teflon®, εr = 2.55 Part Number ATC100B4R7BT500XT ATC100B2R7BT500XT ATC100B1R5BT500XT ATC100B5R6CT500XT ATC100B220GT500XT T491D106M035AT ATC100B100JT500XT ATC100B0R8BT500XT ATC100B8R2GT500XT CRCW08051001FKEA TLX8 - 0300 Manufacturer ATC ATC ATC ATC ATC Kemet ATC ATC ATC Vishay Taconic MRF9080LR3 RF Device Data Freescale Semiconductor 3 LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 C7 C18 R3 R2 C6 VGG VDD C17 RF INPUT C1 C2 C3 R1 C5 WB1 C4 C11 C12 C13 WB2 RF OUTPUT C15 C16 C14 C8 C9 C10 MRF9080 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. Broadband GSM 900 Test Circuit Component Layout MRF9080LR3 4 RF Device Data Freescale Semiconductor LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 LIFETIME BUY CUT OUT AREA VGG + C6 U1 R1 C5 R2 VDD + C9 R3 P1 R4 T1 + C4 C3 C15 R5 R6 C7 DUT C10 C13 C14 RF OUTPUT RF INPUT C1 C2 C8 C11 C12 Figure 3. Broadband GSM 900 Optimized Demo Board Schematic Table 6. Broadband GSM 900 Optimized Demo Board Component Designations and Values Part C1 C2 C3, C15 C4, C6 C5 C7, C8 C9 C10, C11 C12, C13 C14 P1 R1 R2, R5, R6 R3 R4 T1 U1 Description 4.7 pF Chip Capacitor, ACCU - P 3.9 pF Chip Capacitor, ACCU - P 22 pF Chip Capacitors, ACCU - P 22 mF, 35 V Tantalum Chip Capacitors 1 mF Chip Capacitor, ACCU - P 5.6 pF Chip Capacitors, ACCU - P 220 mF, 63 V Electrolytic Capacitor 3.3 pF Chip Capacitors, ACCU - P 2.2 pF Chip Capacitors, ACCU - P 4.7 pF Chip Capacitor 5.0 kΩ Potentiometer CMS Cermet Multi - turn 10 Ω, 1/8 W Chip Resistor 1 kΩ, 1/8 W Chip Resistor 1.2 kΩ, 1/8 W Chip Resistor 2.2 kΩ, 1/8 W Chip Resistor Bipolar NPN Transistor, SOT - 23 Voltage Regulator, Micro - 8 Substrate = Taconic RF35, Thickness 0.5 mm Part Number 08051J4R7CBS 08051J3R9CBS 08051J221CBS T491X226K035AS 08053105 08051J5R6CBS 2222 - 136 - 68221 08051J3R3CBS 08051J2R2CBS ATC100B4R7JT500XT 3224W CRCW080510R0FKEA CRCW08051001FKEA CRCW08051201FKEA CRCW08052201FKEA BC847ALT1G LP2951ACDMR2G Manufacturer AVX AVX AVX Kemet AVX AVX Vishay AVX AVX ATC Bourns Vishay Vishay Vishay Vishay ON Semiconductor ON Semiconductor MRF9080LR3 RF Device Data Freescale Semiconductor 5 LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 LIFETIME BUY VBIAS Ground VSUPPLY C5 R1 R2 R4 T1 R3 U1 P1 C6 C9 C15 C4 R5 C3 C1 C2 C11 C12 C14 R6 C7 C10 C13 LIFETIME BUY C8 MRF9080 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. Broadband GSM 900 Optimized Demo Board Component Layout MRF9080LR3 6 RF Device Data Freescale Semiconductor LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 TYPICAL CHARACTERISTICS (IN FREESCALE BROADBAND GSM 900 OPTIMIZED DEMO BOARD) 21 IDQ = 1000 mA G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 20 800 mA 600 mA 19 400 mA 18 VDD = 26 Vdc f = 940 MHz T = 25°C 1 10 Pout, OUTPUT POWER (WATTS) 100 26 Vdc 19 VDD = 22 Vdc 20 30 Vdc 18 IDQ = 600 mA f = 940 MHz T = 25°C 17 1 10 Pout, OUTPUT POWER (WATTS) 100 17 LIFETIME BUY Figure 5. Power Gain versus Output Power Figure 6. Power Gain versus Output Power 21 20 19 18 17 70 W 16 15 850 VDD = 26 Vdc IDQ = 600 mA T = 25°C 870 890 910 Gps Pout = 20 W 70 W IRL Pout = 20 W 0 −5 −10 −15 −20 −25 −30 930 950 970 990 1010 1030 1050 f, FREQUENCY (MHz) 120 110 IRL, INPUT RETURN LOSS (dB) P out , OUTPUT POWER (WATTS) 100 90 80 70 60 50 40 30 20 10 0 60 50 h 40 Pout VDD = 26 Vdc IDQ = 600 mA f = 940 MHz T = 25°C 0 0.2 0.4 0.6 0.8 1.4 1 1.2 Pin, INPUT POWER (WATTS) 1.6 30 20 10 0 1.8 Figure 7. Power Gain and Input Return Loss versus Frequency Figure 8. Output Power and Efficiency versus Input Power 20 25°C G ps , POWER GAIN (dB) 19 50°C 85°C 18 110 P out , OUTPUT POWER (WATTS) 100 90 80 70 60 50 40 30 20 10 100 0 0 0.2 0.4 0.6 0.8 1 1.2 VDD = 26 Vdc IDQ = 600 mA f = 940 MHz 1.4 1.6 Pout h 25°C 85°C 25°C 85°C 55 50 45 40 35 30 25 20 15 10 5 0 1.8 h, DRAIN EFFICIENCY (%) 17 VDD = 26 Vdc IDQ = 600 mA f = 940 MHz 1 10 Pout, OUTPUT POWER (WATTS) 16 Pin, INPUT POWER (WATTS) Figure 9. Power Gain versus Output Power Figure 10. Output Power and Efficiency versus Input Power MRF9080LR3 RF Device Data Freescale Semiconductor 7 LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 h, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) Zload f = 880 MHz f = 1000 MHz Z o = 10 Ω f = 880 MHz Zsource f = 1000 MHz VDD = 26 V, IDQ = 600 mA, Pout = 90 W CW f MHz 880 920 960 1000 Zsource Ω 0.91 - j2.11 0.88 - j2.65 1.6 - j2.61 2.45 - j3.38 Zload Ω 1.22 - j0.12 1.00 - j0.16 1.22 - j0.22 1.14 - j0.41 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 11. Series Equivalent Source and Load Impedance MRF9080LR3 8 RF Device Data Freescale Semiconductor LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 LIFETIME BUY PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF 3 (FLANGE) B 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N H (LID) M TA B M ccc M TA M B M S M (INSULATOR) ccc C TA M B M aaa M TA M B M F E A (FLANGE) A T SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465 - 06 ISSUE G NI - 780 MRF9080LR3 MRF9080LR3 RF Device Data Freescale Semiconductor 9 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 8 Date Oct. 2008 Description • Data sheet revised to reflect part status change, p. 1, including use of applicable overlay. • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN12779, p. 1, 2 • Updated Part Numbers in Tables 5 and 6, Component Designations and Values, to RoHS compliant part numbers, p. 3, 5 • Added Product Documentation and Revision History, p. 10 MRF9080LR3 10 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. MRF9080LR3 Document Number: RF Device Data MRF9080 Rev. 8, 10/2008 Freescale Semiconductor 11