MW6S010NR1_09

Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 5, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two - Tone Performance at 960 MHz: VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP Power Gain — 18 dB Drain Efficiency — 32% IMD — - 37 dBc • Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • On - Chip RF Feedback for Broadband Stability • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MW6S010NR1 MW6S010GNR1 450 - 1500 MHz, 10 W, 28 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265 - 09, STYLE 1 TO - 270 - 2 PLASTIC MW6S010NR1 CASE 1265A - 03, STYLE 1 TO - 270 - 2 GULL PLASTIC MW6S010GNR1 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value - 0.5, +68 - 0.5, +12 - 65 to +150 150 225 Unit Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 10 W PEP Symbol RθJC Value (2,3) 2.85 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf . Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2005-2006, 2008-2009. All rights reserved. MW6S010NR1 MW6S010GNR1 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A A III Table 4. Moisture Sensitivity Level Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 125 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 0.3 Adc) Dynamic Characteristics Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss — — — 0.32 10 23 — — — pF pF pF VGS(th) VGS(Q) VDS(on) 1.5 2 — 2.3 3.1 0.27 3 4 0.35 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 125 mA, Pout = 10 W PEP, f = 960 MHz, Two - Tone Test, 100 kHz Tone Spacing Power Gain Drain Efficiency Intermodulation Distortion Input Return Loss Gps ηD IMD IRL 17.5 31 — — 18 32 - 37 - 18 20.5 — - 33 - 10 dB % dBc dB Typical Performances (In Freescale 450 MHz Demo Board, 50 οhm system) VDD = 28 Vdc, IDQ = 150 mA, Pout = 10 W PEP, 420 - 470 MHz, Two - Tone Test, 100 kHz Tone Spacing Power Gain Drain Efficiency Intermodulation Distortion Input Return Loss Gps ηD IMD IRL — — — — 20 33 - 40 - 10 — — — — dB % dBc dB MW6S010NR1 MW6S010GNR1 2 RF Device Data Freescale Semiconductor B1 VBIAS + C2 + C3 C4 C6 C7 C10 C11 C12 C13 L1 RF OUTPUT + C15 C16 + C18 + C19 VSUPPLY RF INPUT R1 Z1 C1 Z2 Z3 Z4 DUT Z5 Z6 C20 Z7 C14 C5 C8 C9 C17 Z1 Z2 Z3 Z4 0.073″ x 0.223″ Microstrip 0.112″ x 0.070″ Microstrip 0.213″ x 0.500″ Microstrip 0.313″ x 1.503″ Microstrip Z5 Z6 Z7 PCB 0.313″ x 0.902″ Microstrip 0.073″ x 1.080″ Microstrip 0.073″ x 0.314″ Microstrip Rogers ULTRALAM 2000, 0.031″, εr = 2.55 Figure 1. MW6S010NR1(GNR1) Test Circuit Schematic — 900 MHz Table 6. MW6S010NR1(GNR1) Test Circuit Component Designations and Values — 900 MHz Part B1 C1, C6, C11, C20 C2, C18, C19 C3, C16 C4, C15 C5, C8, C17 C7, C12 C9, C10, C13 C14 L1 R1 Ferrite Bead 47 pF Chip Capacitors 22 μF, 35 V Tantalum Capacitors 220 μF, 63 V Electrolytic Capacitors, Radial 0.1 μF Chip Capacitors 0.8 - 8.0 pF Variable Capacitors, Gigatrim 24 pF Chip Capacitors 6.8 pF Chip Capacitors 7.5 pF Chip Capacitor 12.5 nH Inductor 1 kΩ, 1/4 W Chip Resistor Description Part Number 2743019447 ATC100B470JT500XT T491D226K035AT 2222 - 136 - 68221 CDR33BX104AKWS 272915L ATC100B240JT500XT ATC100B6R8JT500XT ATC100B7R5JT500XT A04T - 5 CRCW12061001FKEA Manufacturer Fair - Rite ATC Kemet Vishay Kemet Johanson ATC ATC ATC Coilcraft Vishay MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semiconductor 3 C3 C7 C4 C10 C2 B1 C6 C11 C13 R1 C1 C9 L1 C12 C16 C15 C18 C19 C20 C17 C14 C5 C8 MW6S010N Figure 2. MW6S010NR1(GNR1) Test Circuit Component Layout — 900 MHz MW6S010NR1 MW6S010GNR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — 900 MHz ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) IRL, INPUT RETURN LOSS (dB) −8 48 44 40 36 32 28 24 20 16 910 920 930 940 950 960 IMD Gps VDD = 28 Vdc, Pout = 10 W (Avg.) IDQ = 125 mA, 100 kHz Tone Spacing −16 −18 −20 −22 −24 −26 970 IRL ηD −10 −12 −14 f, FREQUENCY (MHz) Figure 3. Two - Tone Wideband Performance @ Pout = 10 Watts 20 −10 −20 −30 −40 7th Order −50 −60 −70 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. VDD = 28 Vdc, IDQ = 125 mA f = 945 MHz, Two−Tone Measurements 100 kHz Tone Spacing 3rd Order IDQ = 190 mA 19 Gps, POWER GAIN (dB) 125 mA 18 90 mA IMD, INTERMODULATION DISTORTION (dBc) 5th Order 17 16 15 VDD = 28 Vdc, f = 945 MHz Two−Tone Measurements 100 kHz Tone Spacing 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. Figure 4. Two - Tone Power Gain versus Output Power Figure 5. Intermodulation Distortion Products versus Output Power IMD, INTERMODULATION DISTORTION (dBc) −15 −20 −25 −30 −35 −40 −45 −50 −55 0.1 1 5th Order 7th Order 3rd Order VDD = 28 Vdc, Pout = 10 W (Avg.) IDQ = 125 mA, Two−Tone Measurements (f1+f2)/2 = Center Frequency = 945 MHz 48 Ideal Pout, OUTPUT POWER (dBm) 46 P3dB = 43.14 dBm (20.61 W) 44 P1dB = 42.23 dBm (16.71 W) Actual 42 VDD = 28 Vdc, IDQ = 125 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 945 MHz 19 21 23 25 27 29 40 38 10 100 TWO−TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS — 900 MHz ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 50 VDD = 28 Vdc IDQ = 125 mA f = 945 MHz −10 40 −20 ACPR (dBc) ηD, DRAIN EFFICIENCY (%) 30 Gps ηD 10 ACPR 0 0.1 1 Pout, OUTPUT POWER (WATTS) AVG. 10 −30 20 −40 −50 −60 Figure 8. Single - Carrier CDMA ACPR, Power Gain and Power Added Efficiency versus Output Power 20 TC = −30_C 50 25_C ηD 85_C 40 −30_C Gps 19 Gps, POWER GAIN (dB) 18 25_C 85_C 30 17 20 16 15 0.1 1 10 VDD = 28 Vdc 10 IDQ = 125 mA f = 945 MHz 0 100 Pout, OUTPUT POWER (WATTS) CW Figure 9. Power Gain and Power Added Efficiency versus Output Power 24 IDQ = 125 mA f = 945 MHz Gps, POWER GAIN (dB) 18 16 S21 (dB) 17 12 8 16 VDD = 24 V 15 0 2 4 6 8 10 12 14 16 Pout, OUTPUT POWER (WATTS) CW 28 V 32 V 4 0 500 VDD = 28 Vdc Pout = 10 W CW IDQ = 125 mA 600 700 800 900 S11 −20 −25 1000 1100 1200 f, FREQUENCY (MHz) −5 −10 −15 S11 (dB) 20 S21 5 0 19 Figure 10. Power Gain versus Output Power Figure 11. Broadband Frequency Response MW6S010NR1 MW6S010GNR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 108 107 MTTF (HOURS) 106 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 10 W PEP, and ηD = 32%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. MTTF Factor versus Junction Temperature MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semiconductor 7 Zo = 25 Ω f = 980 MHz f = 980 MHz Zsource Zload f = 800 MHz f = 800 MHz VDD = 28 Vdc, IDQ = 125 mA, Pout = 10 W PEP f MHz 800 820 840 860 880 900 920 940 960 980 Zsource Ω 3.1 + j1.9 2.8 + j1.7 2.7 + j2.2 3.1 + j3.4 3.3 + j3.8 2.9 + j3.7 2.8 + j4.4 3.0 + j4.7 3.2 + j4.9 3.6 + j5.2 Zload Ω 10.1 + j2.3 8.3 + j2.5 8.2 + j3.3 9.8 + j4.8 10.6 + j5.6 9.5 + j5.5 10.1 + j5.9 11.0 + j6.4 11.8 + j6.6 12.1 + j7.1 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Input Matching Network Z source Z load Figure 13. Series Equivalent Source and Load Impedance — 900 MHz MW6S010NR1 MW6S010GNR1 8 RF Device Data Freescale Semiconductor T1 VBIAS R1 + C1 R2 R5 + C2 T2 C3 B2 C13 B1 + C4 C14 C15 VSUPPLY R3 R4 R6 RF INPUT DUT Z1 Z2 Z3 C9 Z4 Z5 Z6 L1 Z7 C10 Z8 RF OUTPUT C12 C11 C6 C5 C7 C8 Z1 Z2 Z3 Z4, Z7 0.540″ 0.365″ 0.225″ 0.440″ x 0.080″ x 0.080″ x 0.080″ x 0.080″ Microstrip Microstrip Microstrip Microstrip Z5 Z6 Z8 PCB 0.475″ x 0.330″ Microstrip 0.475″ x 0.325″ Microstrip 1.250″ x 0.080″ Microstrip Rogers ULTRALAM 2000, 0.030″, εr = 2.55 Figure 14. MW6S010NR1(GNR1) Test Circuit Schematic — 450 MHz Table 7. MW6S010NR1(GNR1) Test Circuit Component Designations and Values — 450 MHz Part B1, B2 C1 C2, C15 C3, C14 C4, C9, C10, C13 C5 C6, C11 C7, C8, C12 L1 R1 R2 R3 R4 R5 R6 T1 T2 Ferrite Bead 1 μF, 35 V Tantalum Capacitor 22 μF, 35 V Tantalum Capacitors 0.1 μF Chip Capacitors 330 pF Chip Capacitors 4.3 pF Chip Capacitor 0.6 - 8.0 pF Variable Capacitors 4.7 pF Chip Capacitors 39 μH Chip Inductor 10 Ω Chip Resistor 1 kΩ Chip Resistor 1.2 kΩ Chip Resistor 2.2 kΩ Chip Resistor 5 kΩ Potentiometer 1 kΩ Chip Resistor 5 Volt Regulator, Micro 8 NPN Transistor, SOT - 23 Description Part Number 2743019447 T491C105K050AT T491X226K035AT C1210C104K5RAC ATC700A331JT150XT ATC100B4R3JT500XT 27291SL ATC100B4R7JT500XT ISC - 1210 CRCW080510R0FKEA CRCW08051001FKEA CRCW08051201FKEA CRCW08052201FKEA 1224W CRCW12061001FKEA LP2951CDMR2G BC847ALT1G Manufacturer Fair - Rite Kemet Kemet Kemet ATC ATC Johanson ATC Vishay Vishay Vishay Vishay Vishay Bourns Vishay On Semiconductor On Semiconductor MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semiconductor 9 R2 R5 B1 R1 C1 T1 R3 T2 B2 C14 C13 C12 C15 R4 C2 C4 C5 C9 C7 C8 R6 C3 L1 C10 C11 C6 MW6S010N 450 MHz Figure 15. MW6S010NR1(GNR1) Test Circuit Component Layout — 450 MHz MW6S010NR1 MW6S010GNR1 10 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — 450 MHz ηD, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) −6 −9 −12 −15 −18 −21 ηD, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) −4 −6 −8 −10 −12 −14 IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) 20.4 20.2 20 Gps, POWER GAIN (dB) 19.8 19.6 19.4 19.2 19 18.8 18.6 18.4 400 ALT1 410 420 430 440 450 460 470 480 490 ηD VDD = 28 Vdc, Pout = 3 W (Avg.), IDQ = 150 mA 2−Carrier W−CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 37 Gps 34 31 28 25 −40 −45 IRL ACPR −50 −55 −60 −65 500 f, FREQUENCY (MHz) Figure 16. 2 - Carrier W - CDMA Broadband Performance @ Pout = 3 Watts Avg. 19 18.8 18.5 Gps, POWER GAIN (dB) 18.3 18 17.8 17.5 17.3 17 16.8 16.5 400 ALT1 410 420 430 440 450 460 470 480 490 IRL ACPR ηD VDD = 28 Vdc, Pout = 7.5 W (Avg.), IDQ = 150 mA 2−Carrier W−CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 55 Gps 50 45 40 35 −30 −35 −40 −45 −50 −55 500 f, FREQUENCY (MHz) Figure 17. 2 - Carrier W - CDMA Broadband Performance @ Pout = 7.5 Watts Avg. 30 0 VDD = 28 Vdc, IDQ = 150 mA, f = 450 MHz, N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 −10 −20 ACPR −30 −40 ALT1 ALT2 −50 −60 −70 −80 0.1 1 Pout, OUTPUT POWER (WATTS) AVG. 10 25 S11 −5 20 S21 S21 15 VDD = 28 Vdc Pout = 10 W IDQ = 150 mA −10 S11 −15 10 5 −20 −25 50 100 150 200 250 300 350 400 450 500 550 600 650 f, FREQUENCY (MHz) Figure 18. Broadband Frequency Response Figure 19. Single - Carrier N - CDMA ACPR, ALT1 and ALT2 versus Output Power MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semiconductor 11 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1 & ALT2, CHANNEL POWER (dBc) Zo = 25 Ω f = 500 MHz Zsource f = 500 MHz f = 400 MHz f = 400 MHz Zload VDD = 28 Vdc, IDQ = 150 mA, Pout = 10 W PEP f MHz 400 420 440 460 480 500 Zsource Ω 9.0 + j3.8 8.8 + j5.4 9.6 + j6.6 10.6 + j9.5 10.7 + j12.6 11.5 + j13.9 Zload Ω 15.0 + j1.4 14.3 + j3.3 15.0 + j4.7 16.3 + j7.3 16.4 + j11.1 16.9 + j12.7 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Input Matching Network Z source Z load Figure 20. Series Equivalent Source and Load Impedance — 450 MHz MW6S010NR1 MW6S010GNR1 12 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semiconductor 13 MW6S010NR1 MW6S010GNR1 14 RF Device Data Freescale Semiconductor MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semiconductor 15 MW6S010NR1 MW6S010GNR1 16 RF Device Data Freescale Semiconductor MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semiconductor 17 MW6S010NR1 MW6S010GNR1 18 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1949: Mounting Method for the MHVIC910HR2 (PFP - 16) and Similar Surface Mount Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3789: Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision 4 Date Dec. 2008 Description • Changed Storage Temperature Range in Max Ratings table from - 65 to +175 to - 65 to +150 for standardization across products, p. 1 • Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 • Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related “Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C in Capable Plastic Package bullet, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added “Measured in Functional Test”, On Characteristics table, p. 2 • Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection, Dynamic Characteristics table, p. 2 • Updated Part Numbers in Tables 6, 7, Component Designations and Values, to RoHS compliant part numbers, p. 3, 9 • Removed lower voltage tests from Fig. 10, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 • Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 • Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 13 - 15. Corrected cross hatch pattern in bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC Standard Package Number. • Replaced Case Outline 1265A - 02 with 1265A - 03, Issue C, p. 1, 16 - 18. Corrected cross hatch pattern and its dimensions (D2 and E2) on source contact (D2 changed from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added pin numbers. Corrected mm dimension L for gull - wing foot from 4.90 - 5.06 Min - Max to 0.46 - 0.61 Min - Max. Added JEDEC Standard Package Number. • Added Product Documentation and Revision History, p. 19 5 June 2009 • Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing process as described in Product and Process Change Notification number, PCN13516, p. 2 • Added AN3789, Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages to Product Documentation, Application Notes, p. 19 • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 19 MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semiconductor 19 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140 Fax: +1 - 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005-2006, 2008-2009. All rights reserved. MW6S010NR1 MW6S010GNR1 2Rev. 5, 6/2009 0 Document Number: MW6S010N RF Device Data Freescale Semiconductor