BTB16H-600BW3G

BTB16H-600BW3G Product Preview High Temperature Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. http://onsemi.com Features • • • • • • • • TRIACS 16 AMPERES RMS 600 VOLTS Blocking Voltage to 600 V On-State Current Rating of 16 A RMS at 25°C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dV/dt − 1000 V/ms minimum at 150°C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package High Commutating dI/dt − 2.0 A/ms minimum at 150°C These are Pb−Free Devices MT2 MT1 G MARKING DIAGRAM 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 150°C, Sine Wave, 50 to 60 Hz, Gate Open) VDRM, VRRM On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) Value Unit V IT(RMS) 16 A ITSM 170 A I2t 120 A2sec VDSM/ VRSM VDSM/VRSM +100 V Peak Gate Current (TJ = 150°C, t = 20ms) IGM 4.0 A Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) PGM 20 W Average Gate Power (TJ = 150°C) PG(AV) 1.0 W Operating Junction Temperature Range TJ −40 to +150 °C Storage Temperature Range Tstg −40 to +150 °C Circuit Fusing Consideration (t = 8.3 ms) Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 10ms) HT BTB16−6BWG AYWW 600 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 1 2 TO−220AB CASE 221A STYLE 4 3 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 ORDERING INFORMATION Device Package Shipping BTB16H−600BW3G TO−220AB (Pb−Free) 50 Units / Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. © Semiconductor Components Industries, LLC, 2008 June, 2008 − Rev. P0 1 Publication Order Number: BTB16H−600BW3/D BTB16H−600BW3G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds Symbol Value Unit RqJC RqJA 2.1 60 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Symbol Min Typ Max − − − − 0.005 3.0 − − 1.55 2.5 2.5 2.5 − − − 50 50 50 − − 60 − − − − − − 70 90 70 0.5 0.5 0.5 − − − 1.7 1.1 1.1 0.2 0.2 0.2 − − − − − − (dI/dt)c 2.0 − − A/ms Critical Rate of Rise of On−State Current (TJ = 150°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns) dI/dt − − 100 A/ms Critical Rate of Rise of Off-State Voltage (VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 150°C) dV/dt 1000 − − V/ms Characteristic Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 150°C IDRM/ IRRM mA ON CHARACTERISTICS Peak On-State Voltage (Note 2) (ITM = ± 22.5 A Peak) VTM Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) IGT Holding Current (VD = 12 V, Gate Open, Initiating Current = ±150 mA) IH Latching Current (VD = 12 V, IG = 50 mA) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) IL Gate Trigger Voltage (VD = 12 V, RL = 30 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) VGT Gate Non−Trigger Voltage (TJ = 150°C) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) VGD V mA mA mA V V DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current, See Figure 10. (Gate Open, TJ = 150°C, No Snubber) 2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 BTB16H−600BW3G Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VTM VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current on state IH IRRM at VRRM off state IH Quadrant 3 MainTerminal 2 − VTM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 Quadrant I (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF IGT − + IGT (−) MT2 (−) MT2 Quadrant III Quadrant 1 MainTerminal 2 + Quadrant IV (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF − MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 + Voltage IDRM at VDRM BTB16H−600BW3G 24 22 PAV, AVERAGE POWER (WATTS) TC, CASE TEMPERATURE (°C) 150 125 120 115 110 105 TBD 100 95 90 85 80 75 70 0 2 4 6 8 10 12 IT(RMS), RMS ON‐STATE CURRENT (AMP) 14 120° 16 14 12 10 8 90° 6 60° 4 2 0 16 DC 180° 20 18 30° 0 2 1000 100 1 0.1 0.01 0.1 1 10 100 t, TIME (ms) 1000 1·104 Figure 4. Thermal Response TYPICAL @ 150°C 10 50 45 IH, HOLD CURRENT (mA) I T, INSTANTANEOUS ON‐STATE CURRENT (AMP) 16 Figure 2. On-State Power Dissipation r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 1. Typical RMS Current Derating 4 6 8 10 12 14 IT(AV), AVERAGE ON‐STATE CURRENT (AMP) 1 MT2 Positive 40 35 30 25 20 15 MT2 Negative 10 5 0.1 0 −40 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (V) −20 4.0 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Figure 3. On-State Characteristics Figure 5. Typical Hold Current Variation http://onsemi.com 4 160 BTB16H−600BW3G 2.0 VGT, GATE TRIGGER VOLTAGE (V) 35 30 Q1 25 20 Q3 15 Q2 10 5 0 −40 −20 0 20 40 60 80 1.8 1.6 Q1 1.4 1.2 1.0 Q3 0.8 0.6 Q2 0.4 0.2 −40 −20 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Typical Gate Trigger Current Variation dv/dt , CRITICAL RATE OF RISE OF OFF‐STATE VOLTAGE (V/ μ s) Figure 7. Typical Gate Trigger Voltage Variation 5000 VD = 800 Vpk TJ = 125°C 4K 3K 2K 1K 0 10 100 1000 RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS) 10000 Figure 8. Critical Rate of Rise of Off-State Voltage (Exponential Waveform) LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC CHARGE 1N4007 MEASURE I TRIGGER CHARGE CONTROL NON‐POLAR CL TRIGGER CONTROL IGT, GATE TRIGGER CURRENT (mA) 40 + 200 V MT2 1N914 51 W MT1 G Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information. Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c http://onsemi.com 5 BTB16H−600BW3G PACKAGE DIMENSIONS TO−220 CASE 221A−07 ISSUE AA −T− B F T SEATING PLANE C S 4 Q A U 1 2 3 H K Z R L V J G D N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 4: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BTB16−600BW3/D