C122F1G

Thyristors Datasheet C122F1G Surface Mount – 50V Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed. Features ■ Glass Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability ■ Blocking Voltage to 50 Volts ■ This is a Pb−Free Device ■ Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Additional Information Functional Diagram G K A Resources Accessories Samples Pin Out 4 1 1 TO-220AB Case 221A Style 4 23 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 02/19/21 Thyristors Datasheet C122F1G Surface Mount – 50V Maximum Ratings (TJ = 25°C unless otherwise noted) Rating Symbol VDRM, VRRM IT (RMS) ITSM I2t PGM PG (AV) IGM TJ Tstg Peak Repetitive Off-State Voltage (Note 1) (Gate Open, Sine Wave 50 to 60 Hz, TJ = 25° to 100°C) On-State RMS Current (180° Conduction Angles; TC = 75°C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TC = 75°C) Circuit Fusing Consideration (t = 8.3 ms) Forward Peak Gate Power (Pulse Width = 10 µs, TC = 70°C) Forward Average Gate Power (t = 8.3 ms, TC = 70°C) Forward Peak Gate Current (Pulse Width = 10 s, TC = 70°C) Operating Junction Temperature Range Storage Temperature Range Value Unit 50 V 8.0 90 34 5.0 0.5 2.0 -40 to +125 -40 to +150 A A A²sec W W W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit R8JC R8JA 1.8 62.5 °C/W TL 260 °C Junction−to−Case (AC) Junction−to−Ambient Thermal Resistance Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds Electrical Characteristics - OFF (TC = 25°C unless otherwise noted) Characteristic TJ = 25°C TJ = 125°C †Peak Repetitive Blocking Current (VAK = VDRM = VRRM; Gate Open) Symbol Min Typ Max IDRM, IRRM - - 10 Unit µA - - 0.5 mA Electrical Characteristics - ON (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Peak On−State Voltage (Note 2) (ITM = 16 A Peak, TC = 25°C) TC = 25°C Gate Trigger Current (Continuous dc) (VAK= 12 V, RL = 100 Ω) TC = -40°C Gate Trigger Voltage (Continuous dc) (VAK= 12 V, RL = 100 Ω) TC = -40°C TC = 25°C Gate Non−Trigger Voltage (Continuous dc) (VAK = 12 V, RL = 100 Ω, TC = 125°C) Symbol Min Typ Max Unit VTM − − 1.83 V − − 25 − − 40 − − 1.5 − − 2.0 0.2 − − − − 30 − − 60 − 30 − IGT VGT VGD TC = 25°C Holding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA) TC = -40°C Turn-Of f Time (VD = Rated VDRM) (ITM = 8 A, IR = 8 A) VGD tq mA V mA μS 2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. Dynamic Characteristics Characteristic Critical Rate of Rise of Off-State Voltage (VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 100°C) 2 Symbol Min Typ Max Unit dV/dt − 200 − V/µs © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 02/19/21 Thyristors Datasheet C122F1G Surface Mount – 50V Voltage Current Characteristic of SCR +Current Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current VTM On State IRRM at VRRM IH Quadrant 3 Main Terminal 2- Quadrant 1 Main Terminal 2+ IH Off State +Voltage IDRM at VDRM VTM Figure 1. Current Derating (Half-Wave) Figure 2. Current Derating (Full-Wave) Figure 3. Maximum Power Dissipation (Half-Wave) Figure 4. Maximum Power Dissipation (Full-Wave) 3 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 02/19/21 Thyristors Datasheet C122F1G Surface Mount – 50V Dimensions Part Marking System SEATING PLANE B F 4 Q 12 C T S 4 A TO-220AB Case 221A Style 3 U 3 H K Z 1 R L V 23 J G D N Dim Inches Millimeters Y M A AKA G YMAXX C122F1G AKA =Year =Month =Assembly Site =Diode Polarity =Pb-Free Package Pin Assignment Min Max Min Max 1 Cathode A 0.590 0.620 14.99 15.75 2 Anode B 0.380 0.420 9.65 10.67 3 Gate 4 Anode C 0.178 0.188 4.52 4.78 D 0.025 0.035 0.64 0.89 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.41 2.67 H 0.110 0.130 2.79 3.30 J 0.018 0.024 0.46 0.61 K 0.540 0.575 13.72 14.61 L 0.060 0.075 1.52 1.91 N 0.195 0.205 4.95 5.21 Q 0.105 0.115 2.67 2.92 R 0.085 0.095 2.16 2.41 S 0.045 0.060 1.14 1.52 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 - 1.15 - Z - 0.080 - 2.04 Ordering Information Device Package Shipping C122F1G TO-220AB (Pb-Free) 1000 Units / Box 1. Dimensioning and tolerancing per ansi y14.5m, 1982. 2. Controlling dimension: inch. 3. Dimension z defines a zone where all body and lead irregularities are allowed. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics. 4 © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 02/19/21