NGB8206ANTF4G

Ignition IGBT Surface Mount > 350V > NGB8206AN NGB8206AN - 20 A, 350 V, N-Channel Ignition IGBT, D2PAK Pb Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over− Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features • Ideal for Coil−on−Plug and Driver−on−Coil Applications • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load 20 Amps, 350 Volts VCE(on) ≤ 1.3 V @ IC = 10A, VGE ≥ 4.5 V • Integrated ESD Diode Protection • Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices • Low Saturation Voltage Maximum Ratings (TJ = 25°C unless otherwise noted) Rating • High Pulsed Current Capability • These are Pb−Free Devices Symbol Value Unit Collector−Emitter Voltage VCES 390 V Applications Collector−Gate Voltage VCER 390 V • Ignition Systems Gate−Emitter Voltage VGE ±15 V 20 ADC 50 AAC Collector Current−Continuous @ TC = 25°C − Pulsed IC Continuous Gate Current IG 1.0 mA Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz) IG 20 mA ESD (Charged−Device Model) ESD 2.0 kV ESD (Human Body Model) R = 1500 Ω, C = 100 pF ESD 8.0 kV ESD (Machine Model) R = 0 Ω, C = 200 pF ESD 500 V 150 Watts 1.0 W/°C −55 to +175 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Functional Diagram Additional Information PD TJ, Tstg Datasheet Resources Samples Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 350V > NGB8206AN Unclamped Collector−To−Emitter Avalanche Characteristics (−55° ≤ TJ ≤ 175°C) Symbol Value Unit Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 Ω, L = 1.8 mH, Starting TJ = 25°C 250 VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, RG = 1000 Ω, L = 1.8 mH, Starting TJ = 150°C 200 EAS VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, RG = 1000 Ω, L = 1.8 mH, Starting TJ = 175°C mJ 180 Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C EAS(R) 2000 mJ 1. When surface mounted to an FR4 board using the minimum recommended pad size. Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, Junction to Case RθJC 1.0 °C/W Thermal Resistance, Junction to Ambient (Note 1) RθJA 62.5 °C/W TL 275 °C Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 350V > NGB8206AN Electrical Characteristics - OFF Characteristic Collector−Emitter Clamp Voltage Zero Gate Voltage Collector Current Symbol BVCES ICES Test Conditions Temperature Min Typ Max IC = 2.0 mA TJ = −40°C to 150°C 325 350 375 IC = 10 mA TJ = −40°C to 150°C 340 365 390 VCE = 15 V, VGE = 0 V, TJ = 25°C – 0.1 1.0 TJ = 25°C 0.5 1.5 10 TJ = 175°C 1.0 25 100* TJ = -40°C 0.4 0.8 5.0 TJ = 25°C 30 35 39 TJ = 175°C 32 37 42 TJ = −40°C 29 32 37 TJ = 25°C 0.05 0.25 1.0 TJ = 175°C 1.0 12.5 25 TJ = −40°C 0.005 0.03 0.25 VCE = 175V VGE = 0 V Reverse Collector−Emitter Clamp Voltage Reverse Collector−Emitter Leakage Current BVCES(R) ICES(R) IC = −75 mA VCE = −24 V Unit V µA V mA Gate−Emitter Clamp Voltage BVGES IG = ±5.0 mA TJ = −40°C to 175°C 12 12.5 14 V Gate−Emitter Leakage Current IGES VGE = ±5.0 V TJ = −40°C to 175°C 200 300 350* µA Gate Resistor RG - TJ = −40°C to 175°C - - - Ω Gate Emitter Resistor RGE - TJ = −40°C to 175°C 14.25 16 25 kΩ Unit Electrical Characteristics - ON (Note 3) Characteristic Gate Threshold Voltage Symbol VGE(th) Test Conditions IC = 1.0 mA, VGE = VCE Threshold Temperature Coefficient (Negative) − − Temperature Min Typ Max TJ = 25°C 1.5 1.8 2.1 TJ = 175°C 0.7 1.0 1.3 TJ = −40°C 1.7 2.0 2.3* − 3.8 4.6 6.0 *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width ≤ 300 µS, Duty Cycle ≤ 2%. © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 V mV/°C Ignition IGBT Surface Mount > 350V > NGB8206AN Electrical Characteristics - ON (Note 4) Characteristic Symbol Test Conditions IC = 6.5 A, VGE = 3.7 V IC = 9.0 A, VGE = 3.9 V IC = 7.5 A, VGE = 4.5 V Collector−to−Emitter On−Voltage VCE (on) IC = 10 A, VGE = 4.5 V IC = 15 A, VGE = 4.5 V IC = 20 A, VGE = 4.5 V Forward Transconductance gfs VCE = 5.0 V, IC = 6.0 A Temperature Min Typ Max TJ = 25°C 0.95 1.15 1.35 TJ = 175°C 0.70 0.95 1.15 TJ = −40°C 1.0 1.30 1.40 TJ = 25°C 0.95 1.25 1.45 TJ = 175°C 0.8 1.05 1.25 TJ = −40°C 1.1 1.4 1.50 TJ = 25°C 0.85 1.15 1.4 TJ = 175°C 0.7 0.95 1.2 TJ = −40°C 1.0 1.3 1.6* TJ = 25°C 0.9 1.2 1.6 TJ = 175°C 0.8 1.05 1.4 TJ = −40°C 1.0 1.2 1.7* TJ = 25°C 1.0 1.3 1.7 TJ = 175°C 1.0 1.3 1.55 TJ = −40°C 1.1 1.35 1.8* TJ = 25°C 1.3 1.6 1.9 TJ = 175°C 1.2 1.5 1.8 TJ = −40°C 1.4 1.75 2.0* TJ = 25°C 10 18 25 *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width ≤ 300 µS, Duty Cycle ≤ 2%. © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Unit V Mhos Ignition IGBT Surface Mount > 350V > NGB8206AN Dynamic Characteristics Characteristic Symbol Input Capacitance CISS Output Capacitance COSS Transfer Capacitance CRSS Test Conditions VCE = 25 V f = 10 kHz Temperature TJ = 25°C Min Typ Max 1100 1300 1500 70 80 90 18 20 22 Unit pF Switching Characteristics Characteristic Turn−Off Delay Time (Resistive) Symbol td (off) Test Conditions VCC = 300 V, IC = 9 A RG = 1.0 kΩ, Temperature Min Typ Max TJ = 25°C 6.0 8.0 10 TJ = 175°C 6.0 8.0 10 TJ = 25°C 4.0 6.0 8.0 TJ = 175°C 8.0 10.5 14 TJ = 25°C 3.0 5.0 7.0 TJ = 175°C 5.0 7.0 9.0 TJ = 25°C 1.5 3.0 4.5 TJ = 175°C 5.0 7.0 10 TJ = 25°C 1.0 1.5 2.0 TJ = 175°C 1.0 1.5 2.0 TJ = 25°C 4.0 6.0 8.0 TJ = 175°C 3.0 5.0 7.0 Unit RL = 33 Ω, Fall Time (Resistive) Turn−Off Delay Time (Inductive) tf td (off) VGE = 5.0 V VCC = 300 V, IC = 9 A RG = 1.0 kΩ, L = 300 µH, Fall Time (Inductive) Turn−On Delay Time tf td (on) µSec VGE = 5.0 V VCC = 14 V, IC = 9.0 A RG = 1.0 kΩ, RL = 1.5 Ω, Rise Time tr VGE = 5.0 V 2. Pulse Test: Pulse Width ≤ 300 µS, Duty Cycle ≤ 2%. *Maximum Value of Characteristic across Temperature Range. © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 350V > NGB8206AN Ratings and Characteristic Curves Figure 1. Self Clamped Inductive Switching Figure 2. Open Secondary Avalanche Current vs. Temperature Figure 3. Collector−to−Emitter Voltage vs. Junction Temperature Figure 4. Collector Current vs. Collector−to−Emitter Voltage Figure 5. Collector Current vs. Collector−to−Emitter Voltage Figure 6. Collector Current vs. Collector−to−Emitter Voltage © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 350V > NGB8206AN Figure 7. Transfer Characteristics Figure 8. Collector−to−Emitter Leakage Current vs. Temperature 100000 10000 1000 100 10 1.0 0.1 0 ° Figure 9. Gate Threshold Voltage vs. Temperature Figure 10. Capacitance vs. Collector−to−Emitter Voltage Figure 11. Resistive Switching Fall Time vs.Temperature Figure 12. Inductive Switching Fall Time vs.Temperature 12 12 SWITCHING TIME ( s) 10 10 tfall 8 I tdelay 6 6 2 0 25 t VCC = 300 V VGE = 5.0 V R G = 1000 IC = 9.0 A R L = 33 4 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) t 2 175 0 100 ° © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 350V > NGB8206AN Figure 13. Minimum Pad Transient Thermal Resistance (Non−normalized Junction−to−Ambient) 1 0.2 0.1 ° 0.1 0.02 t2 0.01 0.01 0.000001 1 t1 1 2 0.00001 0.0001 0.001 0.01 0.1 1 © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18 Ignition IGBT Surface Mount > 350V > NGB8206AN Soldering Footrpint Dimensions 10.49 8.38 16.155 2X 0.13 (0.005) M T B 3.504 M 2X 1.016 5.080 PITCH K DIMENSIONS: MILLIMETERS Part Marking System 4 Collector Dim Inches Millimeters Min Max Min Max A 0.340 0.380 8.64 9.65 B 0.380 0.405 9.65 10.29 C 0.160 0.190 4.06 4.83 D 0.020 0.035 0.51 0.89 E 0.045 0.055 1.14 1.40 F 0.310 0.350 7.87 8.89 G 0.100 BSC GB LF 8202ANG 8206ANG AYWW 1 Gate 3 Emitter 2 Collector GB8206AN = Device Code A= Y= WW Assembly Location Year = Work Week 2.54 BSC H 0.080 0.110 2.03 2.79 J 0.018 0.025 0.46 0.64 K 0.090 0.110 2.29 2.79 L 0.052 0.072 1.32 1.83 M 0.280 0.320 7.11 8.13 N 0.197 REF 5.00 REF P 0.079 REF 2.00 REF R 0.039 REF 0.99 REF S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40 ORDERING INFORMATION Device Package NGB8206ANT4G 2 NGB8206ANTF4G NGB8206ANSL3G D PAK (Pb−Free) Shipping 800 / Tape & Reel 700 / Tape & Reel 50 Units / Rail NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics. © 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18