NGB8206NTF4G

NGB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. http://onsemi.com 20 AMPS 350 VOLTS VCE(on) = 1.3 V @ IC = 10 A, VGE . 4.5 V Features • Ideal for Coil−on−Plug and Driver−on−Coil Applications • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load C • Integrated ESD Diode Protection • Low Threshold Voltage for Interfacing Power Loads to Logic or • • • • Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE) Pb−Free Packages are Available RG G RGE E Applications • Ignition Systems 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCES 390 V Collector−Gate Voltage VCER 390 V Gate−Emitter Voltage VGE $15 V Collector Current−Continuous @ TC = 25°C − Pulsed IC 20 50 ADC AAC Continuous Gate Current IG 1.0 mA Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz) IG 20 mA ESD (Charged−Device Model) ESD 2.0 kV ESD (Human Body Model) R = 1500 W, C = 100 pF ESD ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V PD 150 1.0 W W/°C TJ, Tstg −55 to +175 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating & Storage Temperature Range kV 8.0 MARKING DIAGRAM NGB 8206NG AYWW 1 2 3 D2PAK CASE 418B STYLE 4 NGB8206N = Device Code G = Pb−Free Device A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 5 1 Publication Order Number: NGB8206N/D NGB8206N UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C) Characteristic Symbol Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, L = 1.8 mH, Rg = 1 kW Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, L = 1.8 mH, Rg = 1 kW Starting TJ = 150°C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, L = 1.8 mH, Rg = 1 kW Starting TJ = 175°C Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C Value Unit EAS mJ 250 200 180 EAS(R) mJ 2000 THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Case RqJC 1.0 °C/W Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 62.5 °C/W TL 275 °C Maximum Temperature for Soldering Purposes, 0.125 in from case for 5 seconds (Note 2) 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D. ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit BVCES IC = 2.0 mA TJ = −40°C to 175°C 325 350 375 V IC = 10 mA TJ = −40°C to 175°C 340 365 390 VCE = 15 V, VGE = 0 V TJ = 25°C 0.1 1.0 OFF CHARACTERISTICS Collector−Emitter Clamp Voltage Zero Gate Voltage Collector Current ICES VCE = 175 V, VGE = 0 V Reverse Collector−Emitter Clamp Voltage BVCES(R) IC = −75 mA Reverse Collector−Emitter Leakage Current ICES(R) VCE = −24 V Gate−Emitter Clamp Voltage Gate−Emitter Leakage Current TJ = 25°C 0.5 1.5 10 TJ = 175°C 1.0 25 100* TJ = −40°C 0.4 0.8 5.0 TJ = 25°C 30 35 39 TJ = 175°C 35 39 45* TJ = −40°C 30 33 37 TJ = 25°C 0.05 0.25 0.5 TJ = 175°C 1.0 12.5 25 TJ = −40°C 0.005 0.03 0.25 mA V mA BVGES IG = $5.0 mA TJ = −40°C to 175°C 12 12.5 14 V IGES VGE = $5.0 V TJ = −40°C to 175°C 200 300 350* mA W Gate Resistor (Optional) RG TJ = −40°C to 175°C Gate−Emitter Resistor RGE TJ = −40°C to 175°C 14.25 70 16 25 kW TJ = 25°C 1.5 1.8 2.1 V TJ = 175°C 0.7 1.0 1.3 TJ = −40°C 1.7 2.0 2.3* 3.8 4.6 6.0 ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGE(th) IC = 1.0 mA, VGE = VCE Threshold Temperature Coefficient (Negative) *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. http://onsemi.com 2 mV/°C NGB8206N ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit TJ = 25°C 0.95 1.15 1.35 V TJ = 175°C 0.70 0.95 1.15 TJ = −40°C 1.0 1.30 1.40 TJ = 25°C 0.95 1.25 1.45 TJ = 175°C 0.8 1.05 1.25 TJ = −40°C 1.1 1.4 1.50 TJ = 25°C 0.85 1.15 1.4 TJ = 175°C 0.7 0.95 1.2 TJ = −40°C 1.0 1.3 1.6* TJ = 25°C 1.0 1.3 1.6 TJ = 175°C 0.8 1.05 1.4 TJ = −40°C 1.1 1.4 1.7* TJ = 25°C 1.15 1.45 1.7 TJ = 175°C 1.0 1.3 1.55 TJ = −40°C 1.25 1.55 1.8* TJ = 25°C 1.3 1.6 1.9 TJ = 175°C 1.2 1.5 1.8 TJ = −40°C 1.4 1.75 2.0* TJ = 25°C 10 18 25 Mhos 1100 1300 1500 pF 70 80 90 18 20 22 TJ = 25°C 6.0 8.0 10 TJ = 175°C 6.0 8.0 10 TJ = 25°C 4.0 6.0 8.0 TJ = 175°C 8.0 10.5 14 TJ = 25°C 3.0 5.0 7.0 TJ = 175°C 5.0 7.0 9.0 TJ = 25°C 1.5 3.0 4.5 TJ = 175°C 5.0 7.0 10 TJ = 25°C 1.0 1.5 2.0 TJ = 175°C 1.0 1.5 2.0 TJ = 25°C 4.0 6.0 8.0 TJ = 175°C 3.0 5.0 7.0 ON CHARACTERISTICS (Note 3) Collector−to−Emitter On−Voltage VCE(on) IC = 6.5 A, VGE = 3.7 V IC = 9.0 A, VGE = 3.9 V IC = 7.5 A, VGE = 4.5 V IC = 10 A, VGE = 4.5 V IC = 15 A, VGE = 4.5 V IC = 20 A, VGE = 4.5 V Forward Transconductance gfs IC = 6.0 A, VCE = 5.0 V DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Transfer Capacitance CRSS f = 10 kHz, VCE = 25 V TJ = 25°C SWITCHING CHARACTERISTICS Turn−Off Delay Time (Resistive) Fall Time (Resistive) Turn−Off Delay Time (Inductive) td(off) tf td(off) Fall Time (Inductive) tf Turn−On Delay Time td(on) Rise Time tr VCC = 300 V, IC = 9.0 A RG = 1.0 kW, RL = 33 W VGE = 5 V VCC = 300 V, IC = 9.0 A RG = 1.0 kW, L = 300 mH VGE = 5 V VCC = 14 V, IC = 9.0 A RG = 1.0 kW, RL = 1.5 W VGE = 5 V *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. http://onsemi.com 3 mSec NGB8206N TYPICAL ELECTRICAL CHARACTERISTICS 30 SCIS ENERGY (mJ) 350 IA, AVALANCHE CURRENT (A) 400 TJ = 25°C 300 250 TJ = 175°C 200 150 100 VCC = 14 V VGE = 5.0 V RG = 1000 W 50 0 0 2 6 4 L = 1.8 mH 20 L = 3.0 mH 15 10 L = 10 mH 5 0 −50 10 8 VCC = 14 V VGE = 5.0 V RG = 1000 W 25 −25 INDUCTOR (mH) 50 75 100 125 150 175 Figure 2. Open Secondary Avalanche Current vs. Temperature 60 2.0 VGE = 10 V IC = 25 A 1.75 IC, COLLECTOR CURRENT (A) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 25 TJ, JUNCTION TEMPERATURE (°C) Figure 1. Self Clamped Inductive Switching IC = 20 A 1.5 IC = 15 A 1.25 IC = 10 A 1.0 IC = 7.5 A 0.75 0.5 0.25 VGE = 4.5 V 0.0 −50 50 4.5 V 5V 4V TJ = 175°C 40 3.5 V 30 3V 20 2.5 V 10 0 −25 0 25 50 75 100 150 125 0 175 1 2 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 3. Collector−to−Emitter Voltage vs. Junction Temperature Figure 4. Collector Current vs. Collector−to−Emitter Voltage 60 60 VGE = 10 V 4.5 V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 0 4V 50 5V 40 TJ = 25°C 3.5 V 30 20 3V 10 2.5 V VGE = 10 V 4.5 V 4V 50 5V 40 TJ = −40°C 3.5 V 30 20 3V 10 2.5 V 0 0 0 1 2 3 4 5 6 7 8 0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1 2 3 4 5 6 7 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector Current vs. Collector−to−Emitter Voltage Figure 6. Collector Current vs. Collector−to−Emitter Voltage http://onsemi.com 4 8 NGB8206N TYPICAL ELECTRICAL CHARACTERISTICS 100000 COLLECTOR TO EMITTER LEAKAGE CURRENT (mA) IC, COLLECTOR CURRENT (A) 45 VCE = 5 V 40 10000 35 30 25 20 TJ = 25°C 15 10 TJ = 175°C 5 TJ = −40°C 0 0 0.5 1 1.5 2 2.5 3 3.5 10 VCE = 175 V 1.0 0.1 −50 −25 0 25 50 75 100 125 150 175 VGE, GATE TO EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Transfer Characteristics Figure 8. Collector−to−Emitter Leakage Current vs. Temperature 10000 2.25 Mean Mean + 4 s 2.00 C, CAPACITANCE (pF) 1.75 Mean − 4 s 1.50 1.25 1.00 0.75 0.50 Ciss 1000 Coss 100 Crss 10 1.0 0.25 0 −50 0.1 −25 0 25 50 75 100 125 150 175 0 10 15 20 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 9. Gate Threshold Voltage vs. Temperature Figure 10. Capacitance vs. Collector−to−Emitter Voltage 12 12 10 10 tfall 8 tdelay 6 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 9.0 A RL = 33 W 4 2 0 25 5 TJ, JUNCTION TEMPERATURE (°C) SWITCHING TIME (ms) GATE THRESHOLD VOLTAGE (V) 100 4 2.50 SWITCHING TIME (ms) VCE = −24 V 1000 50 75 100 125 150 8 25 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 9.0 A L = 300 mH tdelay 6 tfall 4 2 0 25 175 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 11. Resistive Switching Fall Time vs. Temperature Figure 12. Inductive Switching Fall Time vs. Temperature http://onsemi.com 5 RqJC(t), TRANSIENT THERMAL RESISTANCE (°C/ Watt) NGB8206N 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 t1 t2 0.01 0.01 0.000001 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 P(pk) TJ(pk) − TA = P(pk) RqJC(t) DUTY CYCLE, D = t1/t2 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 t,TIME (S) Figure 13. Best Case Transient Thermal Resistance (Non−normalized Junction−to−Case Mounted on Cold Plate) ORDERING INFORMATION Package Shipping † NGB8206N D2PAK 50 Units / Rail NGB8206NG D2PAK 50 Units / Rail Device (Pb−Free) NGB8206NSL3 D2PAK 50 Units / Rail NGB8206NSL3G D2PAK 50 Units / Rail (Pb−Free) D2PAK 800 Units / Tape & Reel NGB8206NT4G D2PAK (Pb−Free) 800 Units / Tape & Reel NGB8206NTF4 D2PAK 800 Units / Tape & Reel NGB8206NTF4G D2PAK 800 Units / Tape & Reel NGB8206NT4 (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 NGB8206N PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E V W −B− 4 DIM A B C D E F G H J K L M N P R S V A 1 2 S 3 −T− SEATING PLANE K W J G D 3 PL 0.13 (0.005) H M T B M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR P U SOLDERING FOOTPRINT* L M 8.38 0.33 F 1.016 0.04 10.66 0.42 VIEW W−W 5.08 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: orderlit@onsemi.com http://onsemi.com 7 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NGB8206N/D