SJ6004DS2RP

Thyristors 4 Amp High Temperature Sensitive SCRs SJxx04xSx Series RoHS Description This SJxx04x high temperature SCR series is ideal for uni-directional switch applications such as phase control in heating, motor speed controls, converters/rectifiers and capacitive discharge ignitions These SCRs have a low gate current trigger level of 20μA maximum at approximately 1.5V. Features & Benefits Main Features Symbol IT(RMS) VDRM /VRRM IGT Value Unit 4 A 400 or 600 V 0.2 mA Schematic Symbol A • Voltage capability up to 600V • 150°C maximum junction temperature • Surge capability up to 100A at 60Hz half cycle • Halogen free and RoHS compliant Applications Typical applications includes capacitive discharge system for motorcycle engine CDI, portable generator engine ignition, strobe lights and nailers, as well as generic rectifiers, battery voltage regulators and converters. Also controls for power tools, home/brown goods and white goods appliances. K G Absolute Maximum Ratings — Sensitive SCRs Parameter Test Conditions Value Unit IT(RMS) Symbol RMS on-state current TC = 130°C 4 A IT(AV) Average on-state current A ITSM Peak non-repetitive surge current I2t I2t Value for fusing di/dt IGM PG(AV) Tstg TJ VDSM/VRSM SJxx04xSx Series TC = 130°C 2.56 single half cycle; f = 50 Hz; TJ (initial) = 25°C 25 single half cycle; f = 60 Hz; TJ (initial) = 25°C 30 tp = 8.3 ms 3.7 A2s A/μs A Critical rate of rise of on-state current f = 60 Hz, TJ = 150 °C 50 Peak gate current Pw=20 μs, TJ = 150 °C 0.5 A Average gate power dissipation TJ = 150 °C 0.1 W Storage temperature range -40 to 150 °C Operating junction temperature range -40 to 150 °C VDRM/VRRM+100 V Peak non-repetitive blocking voltage Pw=100 μs ©2017 Littelfuse, Inc Specifications are subject to change without notice. Revised: 08/02/17 Thyristors 4 Amp High Temperature Sensitive SCRs Electrical Characteristics (TJ = 25°C, unless otherwise specified) – Sensitive SCRs Symbol Test Conditions IGT Value Unit MIN. 20 μA MAX. 200 μA MAX. 0.8 V VD = VDRM; RGK = 220Ω ; TJ = 125°C MIN. 45 V/μs VD = VDRM; RL = 3.3 kΩ; TJ = 125°C MIN. 0.2 V V VD = 6V RL = 100 Ω VGT dv/dt VGD VD = VDRM; RL = 3.3 kΩ; TJ = 150°C MIN. 0.1 VGRM IGR = 10μA MIN. 6 V IH IT = 20mA (initial) MAX. 6 mA MAX. 60 μs TYP. 3 μs tq tp=50µs; dv/dt=5V/µs; di/dt=-30A/µs tgt IG = 2 x IGT; PW = 15µs; IT = 8A Static Characteristics Symbol Test Conditions IT = 8A; tp = 380 µs VTM IDRM / IRRM @ VDRM / VRRM MAX. TJ = 25°C 400 - 600V TJ = 125°C, RGK = 220Ω 400 - 600V TJ = 150°C, RGK = 220Ω 400 - 600V Value Unit 1.6 V 5 MAX. μA 1000 3000 Thermal Resistances Symbol Rθ(J-C) Parameter Value Unit Junction to case (AC) 1.5 °C/W Figure 1: Normalized DC Gate Trigger Current vs. Junction Temperature (Sensitive SCR) Figure 2: N  ormalized DC Gate Trigger Voltage vs. Junction Temperature 1.4 1.6 RGK=1K 1.4 Ratio of VGT / VGT (TJ = 25°C) Ratio of IGT / IGT (TJ = 25°C) 1.8 1.2 1 RGK=220Ω 0.8 0.6 0.4 1 0.8 0.6 0.4 0.2 0.2 0 1.2 -40 -15 10 35 60 85 110 Junction Temperature (TJ) -- (°C) SJxx04xSx Series 135 150 0 -40 -15 10 35 60 85 110 135 15 Junction Temperature (TJ) -- (°C) ©2017 Littelfuse, Inc Specifications are subject to change without notice. Revised: 08/02/17 Thyristors 4 Amp High Temperature Sensitive SCRs Figure 4: O  n-State Current vs. On-State Voltage (Typical) Figure 3: Normalized DC Holding Current vs. Junction Temperature Intantaneous On-state Current (IT) – Amps 1.6 Ratio of IH / IH (TJ = 25°C) 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -40 -15 10 35 60 85 110 15 12 9 6 3 0 135 15 0.7 0.8 0.9 Junction Temperature (TJ) -- (°C) Figure 5: Power Dissipation (Typical) vs. RMS On-State Current °C Maximum Allowable Case Temperature (TC )- Average On-State Power Dissipation [PD(AV)] - (Watts) 150 4 3.5 3 2.5 2 1.5 1 140 130 120 110 100 90 0.5 80 0 1 2 3 4 0 1 Figure 7: Maximum Allowable Case Temperature vs. Average On-State Current 3 4 (RMS)] 5 - (Amps) Figure 8: P  eak Capacitor Discharge Current 1000 160 Peak Discharge Current (ITM) - Amps 150 Maximum Allowable Case Temperature (TC )- °C 2 RMS On-State Current [IT RMS On-State Current [I T(RMS)] - (Amps) 140 130 120 110 100 90 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Average On -State Current [AV ] - (Amps) SJxx04xSx Series 2 160 4.5 80 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 Figure 6: M  aximum Allowable Case Temperature vs. RMS On-State Current 5 0 1 Instantaneous On-state Voltage (VT) – Volts 100 ITRM tW 10 0.5 1.0 10.0 50.0 Pulse Current Duration (tW) - ms ©2017 Littelfuse, Inc Specifications are subject to change without notice. Revised: 08/02/17 Thyristors 4 Amp High Temperature Sensitive SCRs Figure 9: Surge Peak On-State Current vs. Number of Cycles Peak Surge (Non-repetitive) On-state Current (ITSM) – Amps 1000 SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS On-State Current: [IT(RMS)]: Maximum Rated Value at Specified Case Temperature 100 Notes: 1. G  ate control may be lost during and immediately following surge current interval. 2. O  verload may not be repeated until junction temperature has returned to steady-state rated value. 10 1 1 10 100 1000 Surge Current Duration -- Full Cycles Figure 10: Typical DC Gate Trigger Current with RGK vs. Junction Temperature Figure 11: Typical DC Holding Current with RGK vs. Junction Temperature 10.00 10.0E+00 RGK=100Ω RGK=100Ω 1.00 IH (mA) IGT (mA) RGK=220Ω RGK=470Ω RGK=220Ω 1.0E+00 RGK=470Ω RGK=1KΩ RGK=1KΩ 0.10 -40 -15 10 35 60 85 110 135 150 Junction Temperature (T ) -- (°C) 100.0E-03 -40 -15 10 35 60 85 110 135 150 Junction Temperature (T ) -- (°C) Figure 12: Typical Static dv/dt with RGK vs. Junction Temperature 1000 Static dv/dt (V/μs) RGK=100Ω 100 RGK=220Ω RGK=470Ω 10 RGK=1KΩ 1 25 SJxx04xSx Series 75 125 ©2017 Littelfuse, Inc Specifications are subject to change without notice. Revised: 08/02/17 Thyristors 4 Amp High Temperature Sensitive SCRs Soldering Parameters Pb – Free assembly Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus Temp) (TL) to peak 5°C/second max TS(max) to TL - Ramp-up Rate 5°C/second max Reflow - Temperature (TL) (Liquidus) Ramp-up TL tL TS(max) Preheat TS(min) Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 5°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 280°C 25 time to peak temperature Test Physical Specifications 100% Matte Tin-plated Body Material UL Recognized epoxy meeting flammability rating V-0 Lead Material Copper Alloy Design Considerations Careful selection of the correct component for the application’s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the component rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. SJxx04xSx Series Time Environmental Specifications AC Blocking Terminal Finish Ramp-do Ramp-down tS 217°C 60 – 150 seconds - Time (tL) tP TP Temperature Reflow Condition Temperature Cycling Temperature/ Humidity High Temp Storage Specifications and Conditions MIL-STD-750, M-1040, Cond A Applied Peak AC voltage for 1008 hours MIL-STD-750, M-1051, 100 cycles; -40°C to +150°C; 15-min dwell-time EIA / JEDEC, JESD22-A101 1008 hours; 160V - DC: 85°C; 85% rel humidity MIL-STD-750, M-1031, 1008 hours; 150°C Low-Temp Storage 1008 hours; -40°C Resistance to Solder Heat MIL-STD-750 Method 2031 Solderability ANSI/J-STD-002, category 3, Test A Lead Bend MIL-STD-750, M-2036 Cond E Moisture Sensitivity Level Level 1, JEDEC-J-STD-020 ©2017 Littelfuse, Inc Specifications are subject to change without notice. Revised: 08/02/17 Thyristors 4 Amp High Temperature Sensitive SCRs Dimensions — TO-251AA (V/I-Package) — V/I-PAK Through Hole TC MEASURING POINT E Anode H D AREA: 0.040 IN2 Dimension 5.28 .208 J A 5.34 .210 B R P Q S K C Cathode L F Anode GATE G I Inches Min Typ Millimeters Max Min Typ Max A 0.037 0.040 0.043 0.94 1.01 1.09 B 0.235 0.242 0.245 5.97 6.15 6.22 C 0.350 0.361 0.375 8.89 9.18 9.53 D 0.205 0.208 0.213 5.21 5.29 5.41 E 0.255 0.262 0.265 6.48 6.66 6.73 F 0.027 0.031 0.033 0.69 0.80 0.84 G 0.087 0.090 0.093 2.21 2.28 2.36 H 0.085 0.092 0.095 2.16 2.34 2.41 I 0.176 0.180 0.184 4.47 4.57 4.67 J 0.018 0.020 0.023 0.46 0.51 0.58 K 0.035 0.037 0.039 0.90 0.95 1.00 L 0.018 0.020 0.023 0.46 0.52 0.58 P 0.042 0.047 0.052 1.06 1.20 1.32 Q 0.034 0.039 0.044 0.86 1.00 1.11 R 0.034 0.039 0.044 0.86 1.00 1.11 S 0.074 0.079 0.084 1.86 2.00 2.11 Dimensions — TO-252AA (D-Package) — D-PAK Surface Mount Anode E D 6.71 .264 5.28 .208 TC MEASURING POINT Dimension 6.71 .264 B C P Q Cathode GATE F Anode 1.60 .063 1.80 .071 AREA : 0.040 IN 2 3 .118 G I O L K M N SJxx04xSx Series J H 4.60 .181 Millimeters Min Typ Max Min Typ Max A 0.037 0.040 0.043 0.94 1.01 1.09 B 0.235 0.243 0.245 5.97 6.16 6.22 C 0.106 0.108 0.113 2.69 2.74 2.87 A 5.34 .210 Inches D 0.205 0.208 0.213 5.21 5.29 5.41 E 0.255 0.262 0.265 6.48 6.65 6.73 F 0.027 0.031 0.033 0.69 0.80 0.84 G 0.087 0.090 0.093 2.21 2.28 2.36 H 0.085 0.092 0.095 2.16 2.33 2.41 I 0.176 0.179 0.184 4.47 4.55 4.67 J 0.018 0.020 0.023 0.46 0.51 0.58 K 0.035 0.037 0.039 0.90 0.95 1.00 L 0.018 0.020 0.023 0.46 0.51 0.58 M 0.000 0.000 0.004 0.00 0.00 0.10 N 0.021 0.026 0.027 0.53 0.67 0.69 O 0° 0° 5° 0° 0° 5° P 0.042 0.047 0.052 1.06 1.20 1.32 Q 0.034 0.039 0.044 0.86 1.00 1.11 ©2017 Littelfuse, Inc Specifications are subject to change without notice. Revised: 08/02/17 Thyristors 4 Amp High Temperature Sensitive SCRs TO-252 Embossed Carrier Reel Pack (RP) Specifications * Cover tape 0.315 (8.0) 0.059 Dia (1.5) Cathode XXXXXX XXXXXX * DC 0.524 (13.3) DC 0.63 (16.0) XXXXXX Gate XXXXXX 0.157 (4.0) DC Meets all EIA-481-2 Standards Anode 12.99 (330.0) 0.512 (13.0) Arbor Hole Dia. Dimensions are in inches (and millimeters). 0.64 (16.3) Direction of Feed Product Selector Part Number Voltage Gate Sensitivity Type Package X 0.2mA Sensitive SCR TO-251 X 0.2mA Sensitive SCR TO-252 400V 600V SJxx04VS2 X SJxx04DS2 X Note: xx = Voltage Packing Options Part Number Marking Weight Packing Mode Base Quantity SJxx04DS2TP SJxx04DS2 0.3 g Tube 750 (75 per tube) SJxx04DS2RP SJxx04DS2 0.3 g Embossed Carrier 2500 SJxx04VS2TP SJxx04VS2 0.4 g Tube 750 (75 per tube) Note: xx = Voltage Part Numbering System Part Marking System SJ 60 04 D S2 COMPONENT TYPE SJ: SCR VOLTAGE RATING 40 : 400V 60 : 600V CURRENT 04: 4A SENSITIVITY S2:0.2mA PACKAGE TYPE V : TO-251 (VPAK) D : TO-252 (DPAK) SJxx04DS2 YMLDD ® Date Code Marking Y:Year Code M: Month Code L: Location Code DD: Calendar Code Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimier-electronics. SJxx04xSx Series ©2017 Littelfuse, Inc Specifications are subject to change without notice. Revised: 08/02/17