239AS8E

HMC239AS8 / 239AS8E v00.0311 GaAs MMIC SPDT SWITCH DC - 2.5 GHz Typical Applications the hMc239AS8 / hMc239AS8e is ideal for: Features Low insertion Loss: 0.4 dB high isolation: 35 dB Fast Switching Speed: 2 ns high input iP3: +50 dBm SwitcheS - SPDt - SMt • MMDS & WirelessLAN • Basestation Infrastructure • Portable Wireless Functional Diagram General Description The HMC239AS8 & HMC239AS8E are low-cost GaAs MMic SPDt switches in 8-lead SOic packages. the switch can control signals from Dc to 2.5 Ghz. it is especially suited for low or medium power applications which require extremely fast switching with minimal insertion loss. the two control voltages require a minimal amount of Dc current which is optimal for battery powered radio systems. RF1 and RF2 are reflective shorts when “Off”. Electrical Specifications, TA = +25 °C, Vctl = 0 / -5V, 50 Ohm System Parameter Frequency Dc - 0.1 Ghz Dc - 0.5 Ghz Dc - 1.0 Ghz Dc - 2.0 Ghz Dc - 2.5 Ghz Dc - 0.5 Ghz Dc - 1.0 Ghz Dc - 2.0 Ghz Dc - 2.5 Ghz Dc - 1.0 Ghz Dc - 2.0 Ghz Dc - 2.5 Ghz 0 / -5V control 0.5 - 1.0 Ghz 0.5 - 2.5 Ghz 0.5 - 1.0 Ghz 0.5 - 2.5 Ghz Dc - 2.5 Ghz tRiSe, tFALL (10 / 90% RF) tON, tOFF (50% ctL to 10 / 90% RF) 2 10 10 ns ns 33 26 18 14 18 17 15 25 23 45 44 Min. typ. 0.4 0.4 0.5 0.6 0.7 36 29 21 17 21 21 20 29 27 50 49 49 Max. 0.6 0.6 0.7 0.8 1.0 Units dB dB dB dB dB dB dB dB dB dB dB dB dBm dBm dBm dBm insertion Loss isolation Return Loss input Power for 1 dB compression input third Order intercept (two-tone input Power = +7 dBm each tone) Switching characteristics 0 / -5V control 0-1 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC239AS8 / 239AS8E v00.0311 GaAs MMIC SPDT SWITCH DC - 2.5 GHz Insertion Loss 0 -0.5 INSERTION LOSS (dB) -1 -1.5 -2 -2.5 -3 0 1 2 3 FREQUENCY (GHz) ISOLATION (dB) Isolation 0 -10 -20 RF1 -30 -40 -50 -60 0 1 2 3 FREQUENCY (GHz) RF2 Return Loss 0 Input 0.1 and 1.0 dB Compression vs. Control Voltage 35 P1dB at 900 MHz P1dB at 1900 MHz RETURN LOSS (dB) -10 COMPRESSION (dBm) 30 P0.1dB at 900 MHz -20 P0.1dB at 1900 MHz 25 -30 -40 0 1 2 3 FREQUENCY (GHz) 20 -4 -5 -6 -7 -8 -9 CONTROL VOLTAGE (Vdc) Input Third Order Distortion vs. Control Voltage 55 Truth Table *control input Voltage tolerances are ± 0.2 Vdc. control input* A (Vdc) -5 B (Vdc) 0 -5 0 -6 0 -7 0 -8 control current ia (μA) -5 5 -12 12 -20 20 -32 32 Ib (μA) 5 -5 12 -12 20 -20 32 -32 Signal Path State RF to RF1 ON OFF ON OFF ON OFF ON OFF RF to RF2 OFF ON OFF ON OFF OM OFF ON IP3 (dBm) 50 900 MHz 0 -6 1900 MHz 0 -7 0 45 -4 -5 -6 -7 -8 -9 CONTROL VOLTAGE (Vdc) -8 0 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 0-2 SwitcheS - SPDt - SMt HMC239AS8 / 239AS8E v00.0311 GaAs MMIC SPDT SWITCH DC - 2.5 GHz Compression vs. Bias Voltage carrier at 900 Mhz carrier at 1900 Mhz input Power for 0.1 dB compression (dBm) 27 28 30 input Power for 1.0 dB compression (dBm) 29 30 32 Distortion vs. Bias Voltage control input (Vdc) -5 -8 third Order intercept (dBm) +7 dBm each tone 900 Mhz 50 50 1900 Mhz 49 49 SwitcheS - SPDt - SMt control input (Vdc) -5 -6 -8 input Power for 0.1 dB compression (dBm) 28 29 31 input Power for 1.0 dB compression (dBm) 30 31 33 Absolute Maximum Ratings Max. input Power (VctL = 0 / -8V) 0.05 Ghz 0.5 - 2 Ghz +27 dBm +34 dBm +2 to -12 Vdc -65 to +150 °c -40 to +85 °c Control Voltage Range (A & B) Storage temperature Operating temperature caution: Do not operate in 1 dB compression at power levels above +30 dBm and do not “hot switch” power levels greater than +20 dBm (Vctl= -5 Vdc). Outline Drawing eLectROStAtic SeNSitiVe DeVice OBSeRVe hANDLiNG PRecAUtiONS NOteS: 1. LeADFRAMe MAteRiAL: cOPPeR ALLOY 2. DiMeNSiONS ARe iN iNcheS [MiLLiMeteRS] 3. DiMeNSiON DOeS NOt iNcLUDe MOLDFLASh OF 0.15 mm PeR SiDe. 4. DiMeNSiON DOeS NOt iNcLUDe MOLDFLASh OF 0.25 mm PeR SiDe. 5. ALL GROUND LeADS MUSt Be SOLDeReD tO PcB RF GROUND. Package Information Part Number hMc239AS8 hMc239AS8e Package Body Material Low Stress injection Molded Plastic RohS-compliant Low Stress injection Molded Plastic Lead Finish Sn / Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] hMc239A XXXX hMc239A XXXX [2] [1] Max peak reflow temperature of 235 °c [2] Max peak reflow temperature of 260 °c [3] 4-Digit lot number XXXX 0-3 F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC239AS8 / 239AS8E v00.0311 GaAs MMIC SPDT SWITCH DC - 2.5 GHz Typical Application Circuit Simple driver using inexpensive standard logic ics provides fast switching using minimum Dc current. Evaluation Circuit Board List of Materials for Evaluation PCB 101782 item J1 - J3 J4 - J6 c1 - c3 U1 PcB [2] Description PcB Mount SMA RF connector Dc Pin 330 pF capacitor, 0402 Pkg. hMc239AS8 / hMc239AS8e SPDt Switch 101780 evaluation PcB [1] [1] Reference this number when ordering complete evaluation PCB [2] circuit Board Material: Rogers 4350 The circuit board used in the application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 Ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from hittite Microwave corporation upon request. F or price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 0-4 SwitcheS - SPDt - SMt