HPMX-5001

1.5 – 2.5 GHz Upconverter/ Downconverter Technical Data HPMX-5001 Features • 2.7 V Single Supply Voltage • Low Power Consumption (60 mA in Transmit Mode, 39 mA in Receive Mode Typical) • 2 dBm Typical Transmit Power at 1900 MHz • Half-Frequency VCO with Frequency Doubler • 32/33 Dual-Modulus Prescaler • Flexible Chip Biasing, Including Standby Mode • TQFP-32 Surface Mount Package • Operation to 2.5 GHz • Use with Companion HPMX-5002 IF chip Plastic TQFP-32 Package General Description The HPMX-5001 Upconverter/ Downconverter provides RF system designers with all of the necessary features to perform an RF-to-IF downconversion for a receive path, as well as an IF-toRF upconversion for transmit mode. Designed to meet the unique needs of portable applications, the HPMX-5001 combines the qualities of flexible chip biasing, low power consumption, and true 2.7 V minimum supply voltage operation to provide superior performance and battery life. By incorporating the active elements of the VCO on-chip, as well as a 32/33 dual-modulus prescaler, overall system component count and costs are decreased. The 32-TQFP package insures that this high level of integration occupies a small amount of printed circuit board space. The HPMX-5001 can be used in either dual-conversion systems (with the HPMX-5002 IF Demodulator/Modulator) or single-conversion systems. The HPMX-5001 is manufactured using Hewlett-Packard’s HP-25 Silicon Bipolar Process with 25 GHz f T and 30 GHz fMax. -5001 HPMX WW YY ZZZ XXXX H Pin Configuration 32 1 25 24 H HPMX-5001 YYWW XXXX 8 9 16 Applications • DECT, UPCS and ISM Band Handsets and Basestations ZZZ 17 Functional Block Diagram RX IF OUT POWER DOWN CONTROL RX RF IN EXT. VCO TANK X2 TX RF OUT 32/33 RATIO SELECT TX IF IN PRESCALER OUT 5965-9105E 7-90 HPMX-5001 Absolute Maximum Ratings[1] Parameter VCC Supply Voltage Voltage at Any Pin[4] Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Min. -0.2 V -0.2 V Max. 8V VCC + 0.2 V 600 mW 15 dBm +150°C +125°C Thermal Resistance[2]: θjc = 100°C/W Notes: 1. Operation of this device in excess of any of these parameters may cause permanent damage. 2. TCASE = 25°C. 3. Derate at 10 mW/°C for TCASE > 90°C. 4. Except CMOS logic inputs – see Summary Characterization Information table. -55°C HPMX-5001 Guaranteed Electrical Specifications Unless otherwise noted, all parameters are guaranteed under the following conditions: VCC = 3.0 V. Test results are based upon use of networks shown in test board schematic diagram (see Figure 28). Typical values are for VCC = 3.0 V, TA = 25°C. Symbol GC Pout ICC Parameters and Test Conditions Receive Conversion Gain[1] Transmitter Power Output Input[2] 2:1 output VSWR Device Supply Current Transmit Mode Receive Mode Synth Mode Standby Mode (with DIVMC Set High) DIV Single-Ended Swing[3] Units dB dBm mA mA mA µA VPP Min. 12 0 Typ. 14 2 64 43 15 1 1 Max. 80 54 19 50 VDIV 0.7 Notes: 1. 50 Ω RF source, 100 MHz < IF < 300 MHz, 1.89 GHz RF. There is a 750 Ω resistor on chip between RXIF and RXIFB (pins 3 and 4). A matching network from 750 Ω to 50 Ω is used for this measurement. Insertion loss of the matching network is included in the net conversion gain figure. See Figure 28. 2. Signal injected into P3 in Figure 28 is -12.5 dBm. 3. DIV output AC coupled into a 2 kΩ || 10 pF load. See test board schematic diagram, Figure 28. 7-91 HPMX-5001 Summary Characterization Information Typical values measured on test board shown in Figure 28 at VCC = 3.0 V, TA = 25°C, RXIF = 110.592 MHz, TXRF = 1.89 GHz, unless otherwise noted. Symbol VIH VIL IIH IIL ts th tpd Receive Mode Gc NF IIP3 IP1dB Parameters and Test Conditions CMOS Input High Voltage (Can Be Pulled up as High as VCC + 7 V)[1] CMOS Input Low Voltage CMOS Input High Current CMOS Input Low Current DIVMC Setup Time[2,8] DIVMC Hold Time[2,8] DIV Propagation Delay[2,8] Mode Switching Time[3] Receive Conversion Gain [9] Noise Figure[4] Input Third Order Intercept Point Input 1 dB Gain Compression Point LO Leakage (2 x fVCO) at IF Port Input VSWR[5] Units V V µA µA ns ns ns µs dB dB dBm dBm dBm Typical ≥ VCC - 0.8 ≤ VCC - 1.9 -300 4 0