KTA1504
TRANSISTOR (PNP)
SOT–23
FEATURES Complementary to KTC3875 Low Noise Excellent hFE Linearity
1. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -50 -50 -5 -150 150 833 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃
2. EMITTER 3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test IC=-1mA, IB=0 IE=-100µA, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2mA IC=-100mA, IB=-10mA VCE=-10V,IC=-1mA, VCB=-10V, IE=0, f=1MHz 80 7 70 conditions Min -50 -50 -5 -0.1 -0.1 400 -0.3 V MHz pF Typ Max Unit V V V µA µA IC=-100µA, IE=0
CLASSIFICATION OF hFE
RANK RANGE MARKING O 70–140 ASO Y 120–240 ASY GR 200–400 ASG
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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