KTC4375

KTC4375 TRANSISTOR (NPN) FEATURES Low voltage SOT-89 1. BASE 2. COLLECTOR 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 30 30 5 1.5 0.5 150 -55-150 Units V V V A W ℃ ℃ 3. EMITTER ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE fT Cob Test conditions MIN 30 30 5 0.1 0.1 100 320 2 1 120 40 V V MHz pF TYP MAX UNIT V V V μA μA IC=1mA,IE=0 IC=10mA,IB=0 IE=1mA,IC=0 VCB=30V,IE=0 VEB=5V,IC=0 VCE=2V,IC=0.5A IC=1.5A,IB=30mA VCE=2V,IC=0.5A VCE=2V,IC=500mA VCB=10V,IE=0,f=1MHz CLASSIFICATION OF Rank Range Marking １　 JinYu hFE(1) O 100-200 GO Y 160-320 GY semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ KTC4375 Typical Characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５