SKW30N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability • Very soft, fast recovery anti-parallel EmCon diode • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1 for target applications • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKW30N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s Operating junction and storage temperature Tj , Tstg -55...+150 °C Ts 260 °C
2
C
G
E
PG-TO-247-3
VCE 600V
IC 30A
VCE(sat) 2.5V
Tj 150°C
Marking
Package
K30N60 PG-TO-247-3
Symbol VCE IC
Value 600 41 30
Unit V A
ICpuls IF
112 112
41 30 IFpuls VGE tSC Ptot 112 ±20 10 250 V µs W
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
1 2
J-STD-020 and JESD-022 Allowed number of short circuits: 1s. 1 Rev. 2_2 Sep 08
SKW30N60
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0 V , I C =500 µ A VCE(sat) V G E = 1 5 V, I C =30A T j = 25 ° C T j = 150 ° C Diode forward voltage VF VGE=0V, IF=30A T j = 25 ° C T j = 150 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C =700 µ A, V C E = V G E V C E = 60 0 V, V G E = 0 V T j = 25 ° C T j = 150 ° C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current1) IC(SC) V G E =15V, t S C ≤ 1 0 µ s V C C ≤ 6 0 0V, T j ≤ 1 50 ° C 300 A Ciss Coss Crss QGate LE V C E =25V, VGE=0V, f =1MHz V C C = 48 0 V, I C =30A V G E =15V 13 nH 1600 150 92 140 1920 180 110 182 nC pF IGES gfs V C E = 0 V , V G E =20V V C E =20V, I C =30A 20 40 3000 100 nA S 1.2 3 1.4 1.25 4 1.8 1.65 5 µA 1.7 2.1 2.5 2.4 3.0 600 V Symbol Conditions Value min. Typ. max. Unit RthJA 40 RthJCD 1 RthJC 0.5 K/W Symbol Conditions Max. Value Unit
1)
Allowed number of short circuits: 1s. 2 Rev. 2_2 Sep 08
SKW30N60
Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm dirr/dt T j = 25 ° C , V R = 20 0 V , I F =30A, d i F /d t = 200A/ µ s 400 32 368 610 5.5 180 nC A A/µs ns td(on) tr td(off) tf Eon Eoff Ets T j = 25 ° C , V C C = 40 0 V, I C =30A, V G E = 0 /1 5 V, R G = 11Ω , L σ 1 ) = 1 80nH , C σ 1 ) = 9 00p F Energy losses include “tail” and diode reverse recovery. 44 34 291 58 0.64 0.65 1.29 53 40 349 70 0.77 0.85 1.62 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm dirr/dt T j = 150 ° C V R = 20 0 V , I F =30A, d i F /d t = 200A/ µ s 520 56 464 1740 9.0 200 nC A A/µs ns td(on) tr td(off) tf Eon Eoff Ets T j = 150 ° C V C C = 40 0 V, I C =30A, V G E = 0 /1 5 V, RG= 11Ω, L σ 1 ) = 1 80nH , C σ 1 ) = 9 00p F Energy losses include “tail” and diode reverse recovery. 44 34 324 67 0.98 0.92 1.90 53 40 389 80 1.18 1.19 2.38 mJ ns Symbol Conditions Value min. typ. max. Unit
1)
Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E. 3 Rev. 2_2 Sep 08
SKW30N60
160A 140A 120A
Ic
100A
tp=4µs 15µs
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
100A 80A TC=80°C 60A 40A 20A 0A 10Hz TC=110°C
10A
50µs 200µs 1ms
1A DC
Ic
0.1A 1V 10V 100V
100Hz
1kHz
10kHz
100kHz
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 11Ω)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C)
300W
60A
250W
50A
Limited by bond wire
200W
IC, COLLECTOR CURRENT
50°C 75°C 100°C 125°C
POWER DISSIPATION
40A
150W
30A
100W
20A
Ptot,
50W
10A
0W 25°C
0A 25°C
50°C
75°C
100°C
125°C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj ≤ 150°C)
4
Rev. 2_2
Sep 08
SKW30N60
90A 80A 70A 90A 80A 70A
IC, COLLECTOR CURRENT
60A 50A 40A 30A 20A 10A 0A 0V
IC, COLLECTOR CURRENT
VGE=20V 15V 13V 11V 9V 7V 5V
60A 50A 40A 30A 20A 10A 0A 0V
VGE=20V 15V 13V 11V 9V 7V 5V
1V
2V
3V
4V
5V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25°C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150°C)
90A 80A
Tj=+25°C -55°C +150°C
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
100A
4.0V
3.5V
IC = 60A
IC, COLLECTOR CURRENT
70A 60A 50A 40A 30A 20A 10A 0A 0V 2V 4V 6V
3.0V
2.5V
IC = 30A
2.0V
1.5V
8V
10V
1.0V
-50°C
0°C
50°C
100°C
150°C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 10V)
Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
5
Rev. 2_2
Sep 08
SKW30N60
1000ns
1000ns td(off)
td(off)
t, SWITCHING TIMES
100ns
tf
t, SWITCHING TIMES
100ns
tf td(on) tr
td(on) tr
10ns
10A
20A
30A
40A
50A
60A
10ns 0Ω
10Ω
20Ω
30Ω
40Ω
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, RG = 11Ω, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, IC = 30A, Dynamic test circuit in Figure E)
1000ns
5.5V
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V -50°C 0°C 50°C 100°C 150°C typ. max.
td(off)
t, SWITCHING TIMES
100ns tf tr td(on)
min.
10ns 0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 30A, RG = 11Ω, Dynamic test circuit in Figure E)
Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.7mA)
6
Rev. 2_2
Sep 08
SKW30N60
5.0mJ 4.5mJ
*) Eon and Ets include losses due to diode recovery.
4.0mJ
Ets*
3.5mJ
*) Eon and Ets include losses due to diode recovery.
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
4.0mJ 3.5mJ 3.0mJ 2.5mJ 2.0mJ 1.5mJ 1.0mJ 0.5mJ 0.0mJ 10A 20A 30A 40A 50A 60A 70A Eon* Eoff
3.0mJ 2.5mJ 2.0mJ 1.5mJ 1.0mJ 0.5mJ 0.0mJ 0Ω Eoff Eon* Ets*
10Ω
20Ω
30Ω
40Ω
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, RG = 11Ω, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, IC = 30A, Dynamic test circuit in Figure E)
3.0mJ
10 K/W
0
2.5mJ
ZthJC, TRANSIENT THERMAL IMPEDANCE
*) Eon and Ets include losses due to diode recovery.
D=0.5
-1
E, SWITCHING ENERGY LOSSES
10 K/W
0.2 0.1 0.05
2.0mJ
Ets*
1.5mJ Eon* Eoff 0.5mJ
10 K/W 0.01
-3
-2
0.02
1.0mJ
10 K/W single pulse
R,(1/W) 0.3681 0.0938 0.0380
R1
τ, (s) 0.0555 -3 1.26*10 -4 1.49*10
R2
C 1= τ1/R 1
C 2= τ2/R 2
0.0mJ 0°C
50°C
100°C
150°C
10 K/W 1µs
-4
10µs
100µs
1ms
10ms 100ms
1s
Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 30A, RG = 11Ω, Dynamic test circuit in Figure E)
tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T)
7
Rev. 2_2
Sep 08
SKW30N60
25V
20V
120V 480V
1nF
Ciss
VGE, GATE-EMITTER VOLTAGE
15V
C, CAPACITANCE
Coss 100pF Crss
10V
5V
0V 0nC
50nC
100nC
150nC
200nC
10pF 0V
10V
20V
30V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 30A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz)
25 µ s
500A
tsc, SHORT CIRCUIT WITHSTAND TIME
20 µ s
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
450A 400A 350A 300A 250A 200A 150A 100A 50A 0A 10V 12V 14V 16V 18V 20V
15 µ s
10 µ s
5µ s
0µ s 1 0V
11V
12V
13V
14V
15V
VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 600V, start at Tj = 25°C)
VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (VCE ≤ 600V, Tj = 150°C)
8
Rev. 2_2
Sep 08
SKW30N60
700ns
3500nC
600ns
Qrr, REVERSE RECOVERY CHARGE
IF = 60A
3000nC
trr, REVERSE RECOVERY TIME
500ns
2500nC
IF = 60A IF = 30A
400ns
IF = 30A
2000nC
300ns
1500nC
IF = 15A
200ns
IF = 15A
1000nC
100ns
500nC
0ns 100A/µs
300A/µs
500A/µs
700A/µs
900A/µs
0nC 100A/µs
300A/µs
500A/µs
700A/µs
900A/µs
d i F /d t , DIODE CURRENT SLOPE Figure 21. Typical reverse recovery time as a function of diode current slope (VR = 200V, Tj = 125°C, Dynamic test circuit in Figure E)
d i F /d t , DIODE CURRENT SLOPE Figure 22. Typical reverse recovery charge as a function of diode current slope (VR = 200V, Tj = 125°C, Dynamic test circuit in Figure E)
24A
1000A/µs
20A
16A
IF = 60A IF = 30A IF = 15A
DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT
Irr, REVERSE RECOVERY CURRENT
800A/µs
600A/µs
12A
400A/µs
8A
dirr/dt,
4A
200A/µs
0A 100A/µs
300A/µs
500A/µs
700A/µs
900A/µs
0A/µs 1 00A/µs
300A/µs
500A/µs
700A/µs
900A/µs
d i F /d t , DIODE CURRENT SLOPE Figure 23. Typical reverse recovery current as a function of diode current slope (VR = 200V, Tj = 125°C, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR = 200V, Tj = 125°C, Dynamic test circuit in Figure E)
9
Rev. 2_2
Sep 08
SKW30N60
60A
2.0V
50A
I F = 6 0A VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
40A 150°C 30A 100°C 20A 25°C 10A -55°C
1.5V
I F = 30A
0A 0.0V
0.5V
1.0V
1.5V
2.0V
1.0V
-40°C
0°C
40°C
80°C
120°C
VF, FORWARD VOLTAGE Figure 25. Typical diode forward current as a function of forward voltage
Tj, JUNCTION TEMPERATURE Figure 26. Typical diode forward voltage as a function of junction temperature
ZthJCD, TRANSIENT THERMAL IMPEDANCE
10 K/W D=0.5 0.2 10 K/W
-1
0
0.1 0.05 0.02 R,(1/W) 0.270 0.231 0.221 0.203 0.070
R1
10 K/W
-2
0.01
τ, (s) 0.157 -2 2.08*10 -3 2.29*10 -4 2.04*10 -5 1.03*10
R2
single pulse
C1=τ1/R1 C2=τ2/R2
10 K/W 1µs
-3
10µs
100µs
1ms
10ms 100ms
1s
tp, PULSE WIDTH Figure 27. Diode transient thermal impedance as a function of pulse width (D = tp / T)
10
Rev. 2_2
Sep 08
SKW30N60
PG-TO247-3
M
M
MIN 4.90 2.27 1.85 1.07 1.90 1.90 2.87 2.87 0.55 20.82 16.25 1.05 15.70 13.10 3.68 1.68 5.44 3 19.80 4.17 3.50 5.49 6.04
MAX 5.16 2.53 2.11 1.33 2.41 2.16 3.38 3.13 0.68 21.10 17.65 1.35 16.03 14.15 5.10 2.60
MIN 0.193 0.089 0.073 0.042 0.075 0.075 0.113 0.113 0.022 0.820 0.640 0.041 0.618 0.516 0.145 0.066 0.214 3
MAX 0.203 0.099 0.083 0.052 0.095 0.085 0.133 0.123 0.027 0.831 0.695 0.053 0.631 0.557 0.201 0.102
Z8B00003327 0
0
55 7.5mm
20.31 4.47 3.70 6.00 6.30
0.780 0.164 0.138 0.216 0.238
0.799 0.176 0.146 0.236 0.248
17-12-2007 03
11
Rev. 2_2
Sep 08
SKW30N60
i,v diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
τ1
Tj (t) p(t)
r1
r2
τ2
τn
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance Lσ =180nH a nd Stray capacity C σ =900pF.
Published by Infineon Technologies AG,
12
Rev. 2_2
Sep 08
SKW30N60
Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved.
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13
Rev. 2_2
Sep 08