HGTG18N120BN

HGTG18N120BN Data Sheet January 2000 File Number 4518.3 54A, 1200V, NPT Series N-Channel IGBT The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49288. Features • 54A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Avalanche Rated • Temperature Compensating SABER™ Model www.intersil.com Packaging JEDEC STYLE TO-247 E Ordering Information PART NUMBER HGTG18N120BN PACKAGE TO-247 BRAND G18N120BN C G NOTE: When ordering, use the entire part number. Symbol C G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 SABER™ is a trademark of Analogy, Inc. HGTG18N120BN Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG18N120BN Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 1200 54 26 160 ±20 ±30 100A at 1200V 390 3.12 125 -55 to 150 260 8 15 UNITS V A A A V V W W/oC mJ oC oC µs µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. ICE = 25A, L = 400µH, TJ = 25oC. 3. VCE(PK) = 960V, TJ = 125oC, RG = 3Ω. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250µA, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES TC = 25oC TC = 125oC TC = 150oC TC = 25oC TC = 150oC MIN 1200 15 6.0 100 TYP 250 2.45 3.8 7.0 10.5 165 220 23 17 170 90 0.8 1.9 1.8 MAX 250 3 2.7 4.2 ±250 200 250 28 22 200 140 1.0 2.4 2.2 UNITS V V µA µA mA V V V nA A V nC nC ns ns ns ns mJ mJ mJ Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage VCE(SAT) IC = 18A, VGE = 15V Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge VGE(TH) IGES SSOA VGEP QG(ON) IC = 150µA, VCE = VGE VGE = ±20V TJ = 150oC, RG = 3Ω, VGE = 15V, L = 200µH, VCE(PK) = 1200V IC = 18A, VCE = 0.5 BVCES IC = 18A, VCE = 0.5 BVCES VGE = 15V VGE = 20V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 5) Turn-On Energy (Note 5) Turn-Off Energy (Note 4) td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF IGBT and Diode at TJ = 25oC ICE = 18A VCE = 0.8 BVCES VGE = 15V RG = 3Ω L = 1mH Test Circuit (Figure 18) 2 HGTG18N120BN Electrical Specifications PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 5) Turn-On Energy (Note 5) Turn-Off Energy (Note 4) Thermal Resistance Junction To Case NOTES: 4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Fig. 18. TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF RθJC TEST CONDITIONS IGBT and Diode at TJ = 150oC ICE = 18A VCE = 0.8 BVCES VGE = 15V RG = 3Ω L = 1mH Test Circuit (Figure 18) MIN TYP 21 17 205 140 0.85 3.7 2.6 MAX 26 22 240 200 1.1 4.9 3.1 0.32 UNITS ns ns ns ns mJ mJ mJ oC/W Typical Performance Curves 60 ICE , DC COLLECTOR CURRENT (A) Unless Otherwise Specified ICE , COLLECTOR TO EMITTER CURRENT (A) 120 100 80 60 40 20 0 TJ = 150oC, RG = 3Ω, VGE = 15V, L = 200µH VGE = 15V 50 40 30 20 10 0 25 50 75 100 125 150 0 200 400 600 800 1000 1200 1400 TC , CASE TEMPERATURE (oC) VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA tSC , SHORT CIRCUIT WITHSTAND TIME (µs) fMAX, OPERATING FREQUENCY (kHz) TJ = 150oC, RG = 3Ω, L = 1mH, V CE = 960V TC = 75oC, VGE = 15V, IDEAL DIODE 100 50 VCE = 960V, RG = 3Ω, TJ = 125oC 25 ISC 20 250 200 15 tSC 10 150 10 1 5 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) TC fMAX2 = (PD - PC) / (EON2 + EOFF) o PC = CONDUCTION DISSIPATION 75oC 75 C (DUTY FACTOR = 50%) 110oC RØJC = 0.32oC/W, SEE NOTES 110oC 10 20 VGE 15V 12V 15V 12V 30 40 100 5 12 13 14 15 16 50 ICE, COLLECTOR TO EMITTER CURRENT (A) VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME 3 ISC, PEAK SHORT CIRCUIT CURRENT (A) 30 300 HGTG18N120BN Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A) 80 Unless Otherwise Specified (Continued) ICE, COLLECTOR TO EMITTER CURRENT (A) 100 TC = -55oC 80 TC = 150oC 60 TC = 25oC 60 TC = -55oC 40 TC = 25oC TC = 150oC 20 DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250µs 0 0 2 4 6 8 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 40 20 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs 0 0 2 4 6 8 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 12 EON2 , TURN-ON ENERGY LOSS (mJ) 10 EOFF, TURN-OFF ENERGY LOSS (mJ) RG = 3Ω, L = 1mH, VCE = 960V TJ = 150oC, VGE = 12V, VGE = 15V 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 5 RG = 3Ω, L = 1mH, VCE = 960V TJ = 150oC, VGE = 12V OR 15V 8 6 4 2 TJ = 25oC, VGE = 12V, VGE = 15V 0 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A) TJ = 25oC, VGE = 12V OR 15V 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 40 tdI , TURN-ON DELAY TIME (ns) RG = 3Ω, L = 1mH, VCE = 960V TJ = 25oC, TJ = 150oC, VGE = 12V 120 RG = 3Ω, L = 1mH, VCE = 960V 100 trI , RISE TIME (ns) 80 60 40 20 TJ = 25oC, TJ = 150oC, VGE = 12V 35 30 25 20 TJ = 25oC, TJ = 150oC, VGE = 15V 15 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A) TJ = 25oC OR TJ = 150oC, VGE = 15V 0 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 4 HGTG18N120BN Typical Performance Curves 350 td(OFF)I , TURN-OFF DELAY TIME (ns) Unless Otherwise Specified (Continued) 250 225 RG = 3Ω, L = 1mH, VCE = 960V RG = 3Ω, L = 1mH, VCE = 960V 300 VGE = 12V, VGE = 15V, TJ = 150oC 250 tfI , FALL TIME (ns) 200 175 150 125 100 75 VGE = 12V, VGE = 15V, TJ = 25oC 50 25 30 35 40 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A) TJ = 25oC, VGE = 12V OR 15V TJ = 150oC, VGE = 12V OR 15V 200 150 100 5 10 15 20 25 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT ICE, COLLECTOR TO EMITTER CURRENT (A) 200 PULSE DURATION = 250µs 150 VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE < 0.5%, VCE = 20V 20 IG(REF) = 2mA, RL = 33.3Ω, TC = 25oC 15 VCE = 1200V VCE = 800V 100 TC = 25oC 50 TC = 150oC 0 6 7 8 9 10 11 12 13 14 15 VGE, GATE TO EMITTER VOLTAGE (V) TC = -55oC 10 VCE = 400V 5 0 0 50 100 QG , GATE CHARGE (nC) 150 200 FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS ICE, COLLECTOR TO EMITTER CURRENT (A) 6 FREQUENCY = 1MHz 5 C, CAPACITANCE (nF) CIES 4 3 2 1 0 0 5 10 15 20 25 VCE , COLLECTOR TO EMITTER VOLTAGE (V) 30 25 20 DUTY CYCLE < 0.5%, TC = 110oC PULSE DURATION = 250µs VGE = 15V OR 12V VGE = 10V 15 10 5 0 0 1 2 3 4 5 VCE , COLLECTOR TO EMITTER VOLTAGE (V) CRES COES FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE 5 HGTG18N120BN Typical Performance Curves ZθJC , NORMALIZED THERMAL RESPONSE Unless Otherwise Specified (Continued) 100 0.5 0.2 0.1 10-1 0.05 0.02 0.01 SINGLE PULSE 10-2 10-5 10-4 10-3 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 10-2 10-1 PD t2 100 t1 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms HGTG18N120BND 90% VGE L = 1mH VCE RG = 3Ω + VDD = 960V ICE 90% 10% td(OFF)I tfI trI td(ON)I EOFF 10% EON2 FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 19. SWITCHING TEST WAVEFORMS 6 HGTG18N120BN Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2 . EON2 and EOFF are defined in the switching waveforms shown in Figure 19. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 7 ECCOSORBD is a Trademark of Emerson and Cumming, Inc.