HGTP1N120BN

HGTD1N120BNS, HGTP1N120BN Data Sheet January 2000 File Number 4649.2 5.3A, 1200V, NPT Series N-Channel IGBT The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49316. Features • 5.3A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Avalanche Rated • Temperature Compensating SABER™ Model Thermal Impedance SPICE Model www.intersil.com • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER HGTD1N120BNS HGTP1N120BN PACKAGE TO-252AA TO-220AB BRAND 1N120B 1N120BN Packaging JEDEC TO-220AB E C G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA in tape and reel, i.e. HGTD1N120BNS9A COLLECTOR (FLANGE) Symbol C G JEDEC TO-252AA COLLECTOR (FLANGE) E G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 SABER™ is a trademark of Analogy, Inc. HGTD1N120BNS, HGTP1N120BN Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified ALL TYPES Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 3) at VGE = 13V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 1200 5.3 2.7 6 ±20 ±30 6A at 1200V 60 0.476 10 -55 to 150 300 260 8 13 UNITS V A A A V V W W/oC mJ oC oC oC µs µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Single Pulse; VGE = 15V; Pulse width limited by maximum junction temperature. 2. ICE = 7A, L = 400µH, VGE = 15V, TJ = 25oC. 3. VCE(PK) = 840V, TJ = 125oC, RG = 82Ω. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250µA, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES TC = 25oC TC = 125oC TC = 150oC TC = 25oC TC = 150oC MIN 1200 15 6.0 6 TYP 20 2.5 3.8 7.1 9.2 14 15 MAX 250 1.0 2.9 4.3 ±250 20 21 UNITS V V µA µA mA V V V nA A V nC nC Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage VCE(SAT) IC = 1.0A VGE = 15V Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge VGE(TH) IGES SSOA VGEP QG(ON) IC = 50µA, VCE = VGE VGE = ±20V TJ = 150oC, RG = 82Ω, VGE = 15V, L = 2mH, VCE(PK) = 1200V IC = 1.0A, VCE = 0.5 BVCES IC = 1.0A VCE = 0.5 BVCES VGE = 15V VGE = 20V 2 HGTD1N120BNS, HGTP1N120BN Electrical Specifications PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 5) Turn-On Energy (Note 5) Turn-Off Energy (Note 4) Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 5) Turn-On Energy (Note 5) Turn-Off Energy (Note 4) Thermal Resistance Junction To Case NOTES: 4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18. TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF RθJC IGBT and Diode at TJ = 150oC ICE = 1.0 A VCE = 0.8 BVCES VGE = 15V RG = 82Ω L = 4mH Test Circuit (Figure 18) TEST CONDITIONS IGBT and Diode at TJ = 25oC ICE = 1.0A VCE = 0.8 BVCES VGE = 15V RG = 82Ω L = 4mH Test Circuit (Figure 18) MIN TYP 15 11 67 226 70 172 90 13 11 75 258 145 385 120 MAX 20 14 76 300 187 123 17 15 88 370 440 175 2.1 UNITS ns ns ns ns J J J ns ns ns ns J J J oC/W Typical Performance Curves 6 ICE , DC COLLECTOR CURRENT (A) (Unless Otherwise Specified) ICE, COLLECTOR TO EMITTER CURRENT (A) 7 6 5 4 3 2 1 0 VGE = 15V 5 4 3 2 1 0 TJ = 150oC, RG = 82Ω, VGE = 15V, L = 2mH 25 50 75 100 125 150 0 200 400 600 800 1000 1200 1400 TC , CASE TEMPERATURE (oC) VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA 3 HGTD1N120BNS, HGTP1N120BN Typical Performance Curves 300 fMAX, OPERATING FREQUENCY (kHz) 200 100 (Unless Otherwise Specified) (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) TJ = 150oC, RG = 82Ω, L = 4mH, VCE = 960V TC = 75oC, VGE = 15V IDEAL DIODE TC 75oC 75oC 110oC 110oC VGE 15V 13V 15V 13V VCE = 840V, RG = 82Ω, TJ = 125oC tSC 18 18 16 16 14 ISC 14 10 5 0.5 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 2.1oC/W, SEE NOTES 1.0 2.0 3.0 12 12 10 13 13.5 14 14.5 VGE , GATE TO EMITTER VOLTAGE (V) 10 15 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 6 5 4 3 2 1 0 TC = 25oC 6 5 4 3 2 1 0 PULSE DURATION = 250µs DUTY CYCLE < 0.5%, VGE = 15V 0 2 4 6 8 10 TC = -55oC TC = 150oC TC = 25oC TC = -55oC TC = 150oC PULSE DURATION = 250µs DUTY CYCLE < 0.5%, VGE = 13V 0 2 4 6 8 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 1200 EON2 , TURN-ON ENERGY LOSS ( J) 1000 800 600 400 200 0 0.5 TJ = 150oC, VGE = 13V TJ = 150oC, VGE = 15V EOFF, TURN-OFF ENERGY LOSS ( J) RG = 82Ω, L = 4mH, VCE = 960V 250 RG = 82Ω, L = 4mH, VCE = 960V 200 TJ = 150oC, VGE = 13V OR 15V 150 TJ = 25oC, VGE = 13V OR 15V 100 TJ = 25oC, VGE = 13V TJ = 25oC, VGE = 15V 1 1.5 2 2.5 3 50 0 0.5 1 1.5 2 2.5 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 4 ISC, PEAK SHORT CIRCUIT CURRENT (A) 3 20 20 HGTD1N120BNS, HGTP1N120BN Typical Performance Curves 24 td(ON)I , TURN-ON DELAY TIME (ns) RG = 82Ω, L = 4mH, VCE = 960V 24 trI , RISE TIME (ns) 20 20 16 12 TJ = 25oC, TJ = 150oC, VGE = 15V 8 4 0.5 TJ = 25oC, TJ = 150oC, VGE = 13V (Unless Otherwise Specified) (Continued) 28 RG = 82Ω, L = 4mH, VCE = 960V 16 TJ 25oC 150oC VGE 12 13V 13V 25oC 15V 150oC 15V 8 0 1 1.5 2 2.5 3 ICE , COLLECTOR TO EMITTER CURRENT (A) 1 1.5 2 2.5 3 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 84 td(OFF)I , TURN-OFF DELAY TIME (ns) 80 76 72 68 64 60 56 RG = 82Ω, L = 4mH, VCE = 960V TJ = 150oC, VGE = 15V tfI , FALL TIME (ns) 360 RG = 82Ω, L = 4mH, VCE = 960V 320 280 240 200 160 2 2.5 3 120 0.5 TJ = 25oC, VGE = 13V OR 15V TJ = 150oC, VGE = 13V OR 15V TJ = 150oC, VGE = 13V TJ = 25oC, VGE = 15V TJ = 25oC, VGE = 13V 0.5 1 1.5 1 1.5 2 2.5 3 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT ICE, COLLECTOR TO EMITTER CURRENT (A) 16 14 12 10 8 6 4 2 0 7 DUTY CYCLE < 0.5%, VCE = 20V PULSE DURATION = 250µs TC = -55oC VGE , GATE TO EMITTER VOLTAGE (V) 18 15 VCE = 800V 12 VCE = 400V 9 VCE = 1200V TC = 25oC TC = 150oC 6 3 IG(REF) = 1mA, RL = 600Ω, TC = 25oC 0 0 4 8 12 16 20 8 9 10 11 12 13 14 15 VGE, GATE TO EMITTER VOLTAGE (V) QG , GATE CHARGE (nC) FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS 5 HGTD1N120BNS, HGTP1N120BN Typical Performance Curves 350 FREQUENCY = 1MHz 300 C, CAPACITANCE (pF) CIES 250 200 150 100 COES 50 CRES 0 0 5 10 15 20 25 (Unless Otherwise Specified) (Continued) ICE, COLLECTOR TO EMITTER CURRENT (A) 6 5 4 3 PULSE DURATION = 250µs DUTY CYCLE < 0.5%, TC = 110oC VGE = 15V VGE = 12V VGE = 10V 2 1 0 0 2 4 6 8 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE ZθJC , NORMALIZED THERMAL RESPONSE 2.0 1.0 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.005 10-5 10-4 10-3 10-2 SINGLE PULSE PD t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 10-1 100 t1 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms VGE RHRD4120 90% 10% EON2 L = 4mH RG = 82Ω + ICE 90% VCE VDD = 960V tfI td(OFF)I 10% td(ON)I trI EOFF ICE - FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 19. SWITCHING TEST WAVEFORMS 6 HGTD1N120BNS, HGTP1N120BN Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 19. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 7 ECCOSORBD is a Trademark of Emerson and Cumming, Inc.