HGTP5N120BND

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IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Features • 21A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . . . 175ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Thermal Impedance SPICE Model Temperature Compensating SABER™ Model www.fairchildsemi.com • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC STYLE TO-247 Formerly Developmental Type TA49306. E Ordering Information PART NUMBER C COLLECTOR (FLANGE) PACKAGE G BRAND HGTG5N120BND TO-247 5N120BND HGTP5N120BND TO-220AB 5N120BND NOTE: When ordering, use the entire part number. i.e., HGTG5N120BND. JEDEC TO-220AB (ALTERNATE VERSION) Symbol C COLLECTOR (FLANGE) E G G C E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2003 Fairchild Semiconductor Corporation HGTG5N120BND, HGTP5N120BND, Rev. B1 HGTG5N120BND, HGTP5N120BND Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG5N120BND HGTP5N120BND UNITS 1200 V At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 21 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 10 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES 40 A ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM ±30 V Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 30A at 1200V Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 167 W Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33 W/oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC 300 oC 260 oC Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 8 µs Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 15 µs Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 840V, TJ = 125oC, RG = 25Ω. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current SYMBOL BVCES ICES VCE(SAT) VGE(TH) IGES TEST CONDITIONS IC = 250µA, VGE = 0V VCE = 1200V IC = 5A, VGE = 15V - V - - 250 µA TC = 125oC - 100 - µA TC = 150oC - - 1.5 mA TC = 25oC - 2.45 2.7 V TC = 150oC - 3.7 4.2 V 6.0 6.8 - V - - ±250 nA 30 - - A - 10.5 - V VGE = 15V - 53 65 nC VGE = 20V - 60 72 nC - 22 25 ns - 15 20 ns - 160 180 ns - 130 160 ns - 450 600 µJ - 390 450 µJ VGE = ±20V SSOA Gate to Emitter Plateau Voltage VGEP IC = 5A, VCE = 600V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time td(ON)I trI td(OFF)I Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 3) EOFF ©2003 Fairchild Semiconductor Corporation UNITS - IC = 45µA, VCE = VGE IC = 5A, VCE = 600V MAX 1200 Switching SOA QG(ON) TYP TC = 25oC TJ = 150oC, RG = 25Ω, VGE = 15V, L = 5mH, VCE(PK) = 1200V On-State Gate Charge MIN IGBT and Diode at TJ = 25oC, ICE = 5A, VCE = 960V, VGE = 15V, RG = 25Ω, L = 5mH, Test Circuit (Figure 20) HGTG5N120BND, HGTP5N120BND, Rev. B1 HGTG5N120BND, HGTP5N120BND Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 3) EOFF Diode Forward Voltage VEC Diode Reverse Recovery Time trr Thermal Resistance Junction To Case RθJC TEST CONDITIONS MIN TYP MAX UNITS - 20 25 ns - 15 20 ns - 182 280 ns - 175 200 ns - 1000 1300 µJ - 560 800 µJ IEC = 10A - 2.70 3.50 V IEC = 7A, dlEC/dt = 200A/µs - 50 65 ns IEC = 1A, dlEC/dt = 200A/µs - 30 40 ns IGBT - - 0.75 oC/W Diode - - 1.75 oC/W IGBT and Diode at TJ = 150oC, ICE = 5A, VCE = 960V, VGE = 15V, RG = 25Ω, L = 5mH, Test Circuit (Figure 20) NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Unless Otherwise Specified ICE , DC COLLECTOR CURRENT (A) 25 VGE = 15V 20 15 10 5 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE ©2003 Fairchild Semiconductor Corporation 150 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 35 TJ = 150oC, RG = 25Ω, VGE = 15V, L = 5mH 30 25 20 15 10 5 0 0 200 400 600 800 1000 1200 1400 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA HGTG5N120BND, HGTP5N120BND, Rev. B1 HGTG5N120BND, HGTP5N120BND Unless Otherwise Specified (Continued) TJ = 150oC, RG = 25Ω, L = 5mH, V CE = 960V TC = 75oC, VGE = 15V TC VGE IDEAL DIODE 75oC 15V 75oC 12V 200 100 50 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.75oC/W, SEE NOTES 10 2 TC VGE 110oC 15V 110oC 12V 6 8 4 ICE , COLLECTOR TO EMITTER CURRENT (A) 80 40 VCE = 840V, RG = 25Ω, TJ = 125oC 35 70 ISC 30 60 25 50 20 40 tSC 15 10 10 30 10 DUTY CYCLE