DPG60C400QB

DPG60C400QB HiPerFRED² VRRM = I FAV = 2x 30 A t rr = 45 ns 400 V High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG60C400QB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-3P ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline compatible with TO-247 ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b DPG60C400QB Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 400 V 400 V VR = 400 V TVJ = 25°C 1 µA VR = 400 V TVJ = 150°C 0.2 mA IF = 30 A TVJ = 25°C 1.41 V IF = 60 A 1.69 V IF = 30 A 1.13 V IF = 60 A TVJ = 150 °C TC = 135 °C rectangular 1.46 V T VJ = 175 °C 30 A TVJ = 175 °C 0.76 V 10.7 mΩ d = 0.5 for power loss calculation only 0.95 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 200 V f = 1 MHz TVJ = 25°C 39 pF TVJ = 25 °C 4 A TVJ = 125 °C 8.5 A TVJ = 25 °C 45 ns TVJ = 125 °C 85 ns CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.3 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 30 A; VR = 270 V -di F /dt = 200 A/µs 160 360 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20200211b DPG60C400QB Package Ratings TO-3P Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 50 Unit A -55 175 °C -55 150 °C 150 °C 1) 5 Weight MD mounting torque FC mounting force with clip Product Marking Logo Part Number Date Code Lot# g 0.8 1.2 Nm 20 120 N Part description D P G 60 C 400 QB IXYS yywwZ = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-3P (3) 1234 Location Ordering Standard Ordering Number DPG60C400QB Similar Part DPG60C400HB DPG80C400HB Equivalent Circuits for Simulation I V0 R0 Marking on Product DPG60C400QB Package TO-247AD (3) TO-247AD (3) * on die level Delivery Mode Tube Code No. 501908 Voltage class 400 400 T VJ = 175°C Fast Diode V 0 max threshold voltage 0.76 V R0 max slope resistance * 8.1 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b DPG60C400QB Outlines TO-3P 1 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b DPG60C400QB Fast Diode 1.0 80 60 A TVJ = 125°C VR = 270 V 70 30 A 0.8 60 30 A 50 IF 60 A TVJ = 125°C 20 V = 270 V R Qrr TVJ = 150°C IRR 0.6 40 15 A [μC] [A] 30 12 [A] 0.4 20 15 A 16 8 25°C 10 0.2 0.0 0.4 0.8 1.2 1.6 4 0 2.0 VF [V] Fig. 1 Forward current IF versus VF 200 400 600 0 1.6 140 400 600 700 TVJ = 125°C VR = 270 V 1.4 16 tfr 600 120 1.2 TVJ = 125°C VR = 270 V IF = 30 A VFR 14 500 12 100 tfr 400 10 [ns] 80 [ns] 300 8 15 A 30 A 200 6 60 A 100 4 1.0 trr Kf 0.8 200 -diF /dt [A/μs] Fig. 3 Typ. reverse recovery current IRR versus -diF /dt -diF /dt [A/μs] Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt VFR 0.6 IRR [V] 0.4 60 Qrr 0.2 0.0 40 0 40 80 120 160 0 0 Fig. 4 Typ. dynamic parameters Qrr, IRR versus TVJ 60 A TVJ = 125°C VR = 270 V 40 400 600 0 400 2 600 Fig. 6 Typ. forward recov. voltage VFR & time tfr versus diF /dt Fig. 5 Typ. reverse recov. time trr versus -diF /dt 1.0 30 A 0.8 15 A ZthJC 0.6 30 200 -diF /dt [A/μs] -diF /dt [A/μs] TVJ [°C] 50 200 Erec [K/W] 0.4 20 [μJ] 10 0.2 0 0.0 0 200 400 600 -diF /dt [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 1 10 100 1000 1000 0 t [ms] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b