IXFH36N60P

PolarHVTM HiPerFET Power MOSFET IXFH 36N60P IXFK 36N60P IXFT 36N60P VDSS = 600 V ID25 = 36 A Ω RDS(on) ≤ 190 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25° C 36 A IDM TC = 25° C, pulse width limited by TJM 80 A IAR TC = 25° C 36 A EAR TC = 25° C 50 mJ EAS TC = 25° C 1.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 20 V/ns PD TC = 25° C 650 W -55 ... +150 150 -55 ... +150 °C °C °C TJ TJM Tstg Md Mounting torque (TO-247 & TO-264) Weight TO-247 TO-268 TO-264 TL TSOLD S D (TAB) G S D (TAB) TO-264 AA (IXFK) 6 5 10 g g g 300 260 °C °C G D l 5.0 V l ±200 nA 100 1000 µA µA 190 mΩ VGS(th) VDS = VGS, ID = 4 mA 3.0 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % D = Drain Tab = Drain Features V 600 (TAB) S G = Gate S = Source l VGS = 0 V, ID = 250 µA l International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l © 2006 IXYS All rights reserved D TO-268 (IXFT) Case Style Characteristic Values Min. Typ. Max. BVDSS TJ = 125° C G 1.13/10 Nm/lb.in. 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Symbol Test Conditions (TJ = 25° C, unless otherwise specified) TO-247 (IXFH) Easy to mount Space savings High power density DS99383E(02/06) IXFH 36N60P IXFK 36N60P IXFT 36N60P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = 0.5 ID25, pulse test 25 Ciss Coss 39 S 5800 pF 570 pF 30 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 30 ns tr VGS = 10 V, VDS = 0.5 ID25 25 ns td(off) RG =2 Ω (External) 80 ns 22 ns 102 nC 34 nC 36 nC tf Qg(on) VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgs Qgd 0.19 ° C/W RthJC RthCS RthCS TO-247 TO-264 ° C/W ° C/W 0.21 0.15 Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 36 A ISM Repetitive 80 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = 25A, -di/dt = 100 A/µs 200 ns QRM IRM VR = 100V 0.8 6.0 TO-247 AD (IXFH) Outline 1 2 3 Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC TO-264 (IXFK) Outline µC A TO-268 (IXFT)Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFH 36N60P IXFK 36N60P IXFT 36N60P Fig. 2. Extended Output Characteristics Fig. 1. Output Characteristics @ 25ºC @ 25ºC 36 90 VGS = 10V 7V 28 70 24 60 6V 20 VGS = 10V 80 I D - Amperes I D - Amperes 32 16 12 8 8V 7V 50 40 6V 30 20 4 10 5V 0 5V 0 0 1 2 3 4 5 6 7 0 3 6 9 Fig. 3. Output Characteristics @ 125ºC 18 21 24 27 30 3.1 VGS = 10V 32 2.8 7V R D S ( o n ) - Normalized 28 I D - Amperes 15 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 36 6V 24 20 16 12 5V 8 4 VGS = 10V 2.5 2.2 1.9 I D = 36A 1.6 I D = 18A 1.3 1 0.7 0 0.4 0 2 4 6 8 10 12 14 16 -50 -25 V D S - Volts 50 75 100 125 150 40 VGS = 10V 3.0 25 Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID 3.4 0 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to 35 TJ = 125ºC 30 2.6 I D - Amperes R D S ( o n ) - Normalized 12 V D S - Volts V D S - Volts 2.2 1.8 1.4 25 20 15 10 TJ = 25ºC 1.0 5 0 0.6 0 10 20 30 40 50 I D - Amperes © 2006 IXYS All rights reserved 60 70 80 90 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFH 36N60P IXFK 36N60P IXFT 36N60P Fig. 8. Transconductance Fig. 7. Input Adm ittance 55 70 50 60 45 35 30 25 20 TJ = 125ºC 15 25ºC -40ºC 10 25ºC 125ºC 50 g f s - Siemens I D - Amperes 40 TJ = -40ºC 40 30 20 10 5 0 0 3.5 4 4.5 5 5.5 6 6.5 0 10 20 V G S - Volts 100 10 90 9 VDS = 300V 80 8 I D = 18A 70 7 I G = 10mA 60 50 40 TJ = 125ºC 50 60 70 6 5 4 3 2 20 TJ = 25ºC 10 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 V S D - Volts 1 1.1 0 1.2 10 20 30 40 50 60 70 80 90 100 110 Q G - nanoCoulombs Fig. 12. Maxim um Transient Therm al Resistance Fig. 11. Capacitance 1.00 10000 C iss R( t h ) J C - ºC / W Capacitance - picoFarads 40 Fig. 10. Gate Charge VG S - Volts I S - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 30 30 I D - Amperes 1000 C oss 100 f = 1MHz 0.10 C rss 10 0.01 0 5 10 15 20 25 V D S - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 100 Pulse Width - milliseconds 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.