IXFK48N60Q3

IXFK48N60Q3 IXFX48N60Q3 Q3-Class HiperFETTM Power MOSFET VDSS ID25 RDS(on) trr D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier G = =   600V 48A 140m 300ns TO-264 (IXFK) S G D Symbol Test Conditions VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 48 A IDM TC = 25C, Pulse Width Limited by TJM 120 A IA TC = 25C 48 A EAS TC = 25C 2 J dv/dt IS  IDM, VDD  VDSS, TJ  150C 50 V/ns PD TC = 25C 1000 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g S Maximum Ratings TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 Tab PLUS247 (IXFX) G    BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 4mA 3.5  IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 V    200 nA TJ = 125C © 2020 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Applications V 6.5 Low Intrinsic Gate Resistance Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages  Characteristic Values Min. Typ. Max. D = Drain Tab = Drain Features  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Tab S G = Gate S = Source  (PLUS247) D 25 A 1 mA   DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls 140 m DS100348A(1/20) IXFK48N60Q3 IXFX48N60Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 20 VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 36 S 7020 pF 790 pF 70 pF Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf 0.13 Qgs  37 ns 11 ns 40 ns 9 ns 140 nC 54 nC 60 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 (External) Qg(on)  VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.125C/W RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 48 A Repetitive, Pulse Width Limited by TJM 192 A IF = IS, VGS = 0V, Note 1 1.4 V IF = 24A, -di/dt = 100A/s 2.2 15.4 VR = 100V, VGS = 0V 300 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK48N60Q3 IXFX48N60Q3 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 50 VGS = 10V VGS = 10V 100 40 80 I D - Amperes I D - Amperes 9V 30 20 8V 9V 60 40 8V 10 20 7V 7V 6V 0 0 1 2 3 4 0 5 6 0 7 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 24A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 50 3.4 VGS = 10V 8V VGS = 10V 3.0 RDS(on) - Normalized I D - Amperes 40 30 20 7V 2.6 2.2 I D = 48A 1.8 I D = 24A 1.4 1.0 10 0.6 6V 5V 0 0 3.0 2 4 6 8 10 14 16 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 24A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature VGS = 10V 125 150 125 150 50 o TJ = 125 C 2.6 40 2.2 I D - Amperes R DS(on) - Normalized 0.2 12 1.8 o TJ = 25 C 1.4 30 20 10 1.0 0 0.6 0 10 20 30 40 50 60 70 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 80 90 100 110 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFK48N60Q3 IXFX48N60Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 80 70 70 60 o TJ = - 40 C 50 g f s - Siemens I D - Amperes 60 50 o 40 TJ = 125 C o 25 C o - 40 C 30 o 25 C 40 o 125 C 30 20 20 10 10 0 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 0 10 20 VGS - Volts 40 50 60 70 80 I D - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 160 16 140 14 120 12 100 10 VGS - Volts I S - Amperes 30 80 60 VDS = 300V I D = 24A I G = 10mA 8 6 o TJ = 125 C 40 4 o TJ = 25 C 20 2 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 50 VSD - Volts 100 150 200 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 100,000 RDS(on) Limit Ciss 10,000 100 I D - Amperes Capacitance - PicoFarads f = 1 MHz Coss 1,000 100µs 10 1ms Crss 100 25µs 1 o TJ = 150 C o TC = 25 C Single Pulse 10ms 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 V DS - Volts 1,000 IXFK48N60Q3 IXFX48N60Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: F_48N60Q3(R8) 6-22-11 IXFK48N60Q3 IXFX48N60Q3 TO-264 Outline D B E A Q S 0R Q1 D 0R1 1 2 L1 3 C L A1 b1 J M C A M b b2 c e = Gate 2,4 = Drain 3 = Source 1 0P1 BACK SIDE A KM D BM 0P 4 PLUS247TM Outline A E A2 E1 Q D2 R D 1 2 4 3 L1 L A1 C b b2 3 PLCS e 2 PLCS 2 PLCS b4 1 = Gate 2,4 = Drain 3 = Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFK48N60Q3 IXFX48N60Q3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved