IXFK64N50Q3

IXFK64N50Q3 IXFX64N50Q3 Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS ID25 D RDS(on) trr S TO-264 (IXFK) = =   500V 64A 85m 250ns G G D S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA 64 A 160 A TC = 25C 64 A EAS TC = 25C 4 J dv/dt IS  IDM, VDD  VDSS, TJ  150C 50 V/ns PD TC = 25C 1000 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) Tab PLUS247 (IXFX) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features 1.13/10 Nm/lb.in  20..120 /4.5..27 N/lb  10 6 g g   Low Intrinsic Gate Resistance Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1   V 6.5 V 200 nA TJ = 125C © 2019 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings 50 A 2 mA 85 m Applications      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls DS100346A(12/19) IXFK64N50Q3 IXFX64N50Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 25 VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 42 6950 pF 937 pF 93 pF Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf 0.13 Qgs   36 ns 11 ns 46 ns 9 ns 145 nC 50 nC 67 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 (External) Qg(on) S VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.125C/W RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 64 A Repetitive, Pulse Width Limited by TJM 256 A IF = IS, VGS = 0V, Note 1 1.4 V IF = 32A, -di/dt = 100A/s 1.54 14 VR = 100V, VGS = 0V 250 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK64N50Q3 IXFX64N50Q3 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C VGS = 10V 9V 60 140 V GS = 10V 120 50 40 I D - Amperes I D - Amperes 9V 100 8V 30 80 60 8V 20 40 7V 10 7V 20 6V 6V 0 0 0 1 2 3 4 5 0 6 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 32A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 3.4 VGS = 10V 8V 60 VGS = 10V 3.0 50 2.6 RDS(on) - Normalized I D - Amperes 20 VDS - Volts VDS - Volts 40 7V 30 20 I D = 64A 2.2 I D = 32A 1.8 1.4 1.0 6V 10 0.6 5V 0 0.2 0 3.0 2 4 6 8 10 12 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 32A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 70 V GS = 10V 60 o TJ = 125 C 50 2.2 1.8 o TJ = 25 C I D - Amperes RDS(on) - Normalized 2.6 40 30 1.4 20 1.0 10 0 0.6 0 20 40 60 80 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 100 120 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFK64N50Q3 IXFX64N50Q3 Fig. 8. Transconductance Fig. 7. Input Admittance 100 80 90 o TJ = - 40 C 70 80 60 o g f s - Siemens I D - Amperes 70 60 50 o TJ = 125 C 40 o 25 C 30 o 125 C 40 30 20 o 20 25 C 50 - 40 C 10 10 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 0 10 20 30 VGS - Volts 40 50 60 70 80 90 100 I D - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 200 16 180 14 VDS = 250V I D = 32A 160 I G = 10mA 12 120 V GS - Volts I S - Amperes 140 100 80 o TJ = 125 C 10 8 6 60 4 o TJ = 25 C 40 2 20 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 50 VSD - Volts 100 150 200 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 100,000 RDS(on) Limit Ciss 10,000 100 I D - Amperes Capacitance - PicoFarads f = 1 MHz 1,000 Coss 25µs 100µs 10 100 o TJ = 150 C C rss o TC = 25 C Single Pulse 10 1ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 V DS - Volts 1,000 IXFK64N50Q3 IXFX64N50Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Z ( th )J C - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2019 IXYS CORPORATION, All Rights Reserved IXYS REF: F_64N50Q3(R8)6-17-11 IXFK64N50Q3 IXFX64N50Q3 TO-264 Outline D B E A Q S 0R Q1 D 0R1 1 2 L1 3 C L A1 b1 J M C AM b b2 c e = Gate 2,4 = Drain 3 = Source 1 0P1 BACK SIDE A K M D BM 0P 4 PLUS247TM Outline A E A2 E1 Q D2 R D 1 2 4 3 L1 L A1 C b b2 3 PLCS e 2 PLCS 2 PLCS b4 1 = Gate 2,4 = Drain 3 = Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFK64N50Q3 IXFX64N50Q3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2019 IXYS CORPORATION, All Rights Reserved