IXGN200N60B3

IXGN200N60B3 GenX3TM 600V IGBT VCES = 600V IC110 = 200A VCE(sat) ≤ 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 IC110 ILRMS ICM TC = 25°C TC = 110°C Terminal Current Limit TC = 25°C, 1ms 300 200 200 1200 A A A A ICM = 300 A SSOA VGE = 15V, TVJ = 125°C, RG = 1Ω (RBSOA) Clamped Inductive Load PC TC = 25°C VCE ≤ VCES G Ec C G = Gate, C = Collector, E = Emitter c Either Emitter Terminal can be used as Main or Kelvin Emitter Features 830 W - 55 ... +150 °C TJM 150 °C z Tstg - 55 ... +150 °C z 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. z 30 g z TJ VISOL 50/60Hz IISOL ≤ 1mA Md Mounting Torque Terminal Connection Torque (M4) t = 1min t = 1s Weight z z z z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) IC ICES VCE = VCES, VGE = 0V Characteristic Values Min. Typ. Max. = 250μA, VCE = VGE 3.0 5.0 TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC IC = 100A, VGE = 15V, Note 1 = 200A, TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved Advantages V z 50 μA z 5 mA ±100 nA 1.35 1.65 1.75 1.50 International Standard Package miniBLOC UL Recognized Aluminium Nitride Isolation - High Power Dissipation Isolation Voltage 3000 V~ Very High Current IGBT Low VCE(sat) for Minimum on-state Conduction Losses MOS Gate Turn-On - Drive Simplicity Low Collector-to-Case Capacitance (< 50 pF) Low Package Inductance (< 5 nH) - Easy to Drive and to Protect V V V High Power Density Low Gate Drive Requirement Applications • Switch-Mode and Resonant-Mode Power Supplies • Uninterruptible Power Supplies (UPS) • DC Choppers • AC Motor Speed Drives • DC Servo and Robot Drives DS99941B(8/09) IXGN200N60B3 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 95 IC = 60A, VCE = 10 V, Note 1 Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz SOT-227B miniBLOC 160 S 26 nF 1260 pF 97 pF Cres Qg(on) 750 nC 115 nC Qgc 245 nC td(on) 44 ns Qge tri Eon td(off) IC = 100V, VGE = 15 V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 100A, VGE = 15V 83 ns 1.6 mJ 310 450 ns 183 300 ns Eoff 2.9 4.5 mJ td(on) 42 tfi tri Eon td(off) tfi VCE = 300V, RG = 1Ω ns Inductive load, TJ = 125°C 80 ns IC = 100A, VGE = 15V 2.4 mJ VCE = 300V, RG = 1Ω Eoff 430 ns 300 ns 4.2 mJ RthJC 0.15 °C/W RthCK 0.05 °C/W Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGN200N60B3 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ T J = 25ºC 200 VGE = 15V 11V 9V 160 VGE = 15V 11V 9V 300 7V 250 IC - Amperes 7V IC - Amperes @ T J = 25ºC 350 120 80 200 150 6V 6V 100 40 50 5V 5V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 1 2 3 4 @ T J =125ºC I 1.15 VCE(sat) - Normalized IC - Amperes 8 9 VGE = 15V 1.20 9V 120 7V 80 = 200A C 1.10 I 1.05 = 150A C 1.00 0.95 I C = 100A 0.90 40 0.85 5V 0 0.80 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 160 3.4 TJ = 25ºC 140 3.0 120 I 2.2 C IC - Amperes 2.6 VCE - Volts 7 1.25 VGE = 15V 13V 11V 160 6 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics 200 5 VCE - Volts VCE - Volts = 200A 150A 100A 1.8 TJ = 125ºC 25ºC - 40ºC 100 80 60 40 1.4 20 1.0 0 5 6 7 8 9 10 11 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 12 13 14 15 3.5 4.0 4.5 5.0 VGE - Volts 5.5 6.0 6.5 IXGN200N60B3 Fig. 8. Gate Charge Fig. 7. Transconductance 16 240 TJ = - 40ºC 200 I C = 100A I G = 10mA 12 160 VGE - Volts 25ºC g f s - Siemens VCE = 300V 14 125ºC 120 10 8 6 80 4 40 2 0 0 0 20 40 60 80 100 120 140 160 180 200 0 100 200 IC - Amperes 300 400 500 600 700 800 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 350 100,000 10,000 250 IC - Amperes Capacitance - PicoFarads 300 Cies 1,000 Coes 200 150 100 100 TJ = 125ºC 50 Cres f = 1 MHz 10 0 5 10 15 20 25 30 35 40 RG = 1Ω dv / dt < 10V / ns 0 100 200 VCE - Volts 300 400 500 600 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.000 0.100 0.010 0.001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 IXGN200N60B3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 4.5 5.0 3.5 3.0 Eoff 4.5 = 100A 3.0 2.5 Eon - Eoff 3.0 --- 2.0 TJ = 125ºC , VGE = 15V VCE = 300V 2.5 1.5 I C = 50A 2.0 1.0 1.5 2 3 4 5 6 7 8 9 2.1 TJ = 125ºC 3.0 2.5 1.5 2.0 1.2 TJ = 25ºC 1.5 0.6 0.5 0.3 50 10 55 60 65 70 2.7 1.5 2.0 1.2 1.5 t f i - Nanoseconds Eoff - MilliJoules 2.5 Eon - MilliJoules 1.8 1000 290 I C 0.6 0.5 65 75 85 95 105 115 800 270 700 260 I C 500 240 0.3 125 400 230 300 1 2 3 4 5 6 7 8 9 10 RG - Ohms Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 320 500 300 480 TJ = 125ºC 420 220 RG = 1Ω , VGE = 15V 400 200 VCE = 300V 380 180 360 160 TJ = 25ºC 140 340 480 VCE = 300V 280 440 240 400 I C = 50A, 100A 200 360 160 320 320 120 50 55 60 65 70 75 80 85 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 90 95 300 100 120 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 280 125 t d(off) - Nanoseconds 240 td(off) - - - - RG = 1Ω, VGE = 15V 320 t d(off) - Nanoseconds 440 520 tf i 460 260 td(off) - - - - 360 t f i - Nanoseconds 280 t f i - Nanoseconds 600 = 50A TJ - Degrees Centigrade tfi 900 = 100A 280 250 I C = 50A 1100 300 0.9 1.0 1200 t d(off) - Nanoseconds I C = 100A 55 0.0 100 1300 2.1 45 95 td(off) - - - TJ = 125ºC, VGE = 15V VCE = 300V 310 3.0 35 90 tfi 320 2.4 VCE = 300V 25 85 330 ---- RG = 1Ω , VGE = 15V 3.5 80 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 4.5 4.0 75 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eon 0.9 1.0 RG - Ohms Eoff 1.8 0.0 0.5 1 2.4 VCE = 300V 3.5 Eon - MilliJoules 3.5 2.7 RG = 1Ω , VGE = 15V 4.0 Eon - MilliJoules Eoff - MilliJoules C Eoff - MilliJoules I 4.0 ---- Eon IXGN200N60B3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 150 td(on) - - - - 46 RG = 1Ω , VGE = 15V C 100 = 100A 90 80 I C = 50A 6 7 8 9 42 TJ = 25ºC, 125ºC 40 40 38 20 30 50 5 60 40 60 4 44 50 70 30 70 50 10 RG - Ohms 55 60 65 70 75 80 85 90 95 t d(on) - Nanoseconds I t d(on) - Nanoseconds 110 3 td(on) - - - - VCE = 300V VCE = 300V 2 80 120 TJ = 125ºC, VGE = 15V 1 48 tr i t r i - Nanoseconds tr i 130 t r i - Nanoseconds 90 140 36 100 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 90 48 80 46 t r i - Nanoseconds 70 44 tr i td(on) - - - - RG = 1Ω , VGE = 15V 60 42 VCE = 300V 50 40 I C = 50A 40 t d(on) - Nanoseconds I C = 100A 38 30 25 35 45 55 65 75 85 95 105 115 36 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_200N60B3(97)3-28-08-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.