IXGR6N170A

Advance Technical Information IXGR6N170A High Voltage IGBT VCES IC25 VCE(sat) tfi(typ) (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 5.5 A IC110 TC = 110°C 2.5 A ICM TC = 25°C, 1ms 18 A SSOA VGE = 15V, TVJ = 125°C, RG = 33Ω ICM = 12 A (RBSOA) Clamped Inductive Load tSC TJ = 125°C, VCE = 1200 V, VGE = 15 V, RG = 33Ω 10 μs PC TC = 25°C 50 W - 55 ... +150 °C TJM 150 °C Tstg - 55 ... +150 °C 2500 3000 V~ V~ 20..120/4.5..27 N/lb = = ≤ = 1700V 5.5A 7.0V 32ns ISOPLUS247TM G C Isolated Tab E G = Gate E = Emitter C = Collector @ 0.8 • VCES TJ VISOL 50/60 Hz, RMS, t = 1minute IISOL < 1mA t = 20 seconds FC Mounting Force TL Maximum Lead Temperature for Soldering 300 °C TSOLD 1.6mm (0.062 in.) from Case for 10s 260 °C 5 g Weight Features z z z Advantages z z z Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 1700 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = 0.8 • VCES, VGE = 0V Note 2, TJ = 125°C IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 3A, VGE = 15V, Note 1 TJ = 125°C © 2010 IXYS CORPORATION, All Rights Reserved z z V 5.4 5.0 V 10 500 μA μA ±100 nA 7.0 V V High Power Density Low Gate Drive Requirement Applications z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V~ Electrical Isolation z z Power Inverters UPS Motor Drives SMPS PFC Circuits Welding Machines DS100279(08/09) IXGR6N170A Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs IC = 6A, VCE = 20V, Note 1 Cies Coes Cres Characteristic Values Min. Typ. Max. 2.0 3.5 S VCE = 25V, VGE = 0V, f = 1MHz 390 20 7 pF pF pF IC = 6A, VGE = 15V, VCE = 0.5 • VCES 18.5 2.8 8.2 nC nC nC 46 ns 40 0.59 ns mJ Qg Qge Qgc td(on) tri Eon Inductive load, TJ = 25°C IC = 6A, VGE = 15V td(off) VCE = 0.5 • VCES, RG = 33Ω tfi Note 3 Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 125°C IC = 6A, VGE = 15V VCE = 0.5 • VCES, RG = 33Ω Note 3 RthJC RthCK Notes: ISOPLUS247 (IXGR) Outline 220 400 ns 32 65 ns 0.18 0.36 mJ 48 43 0.62 230 41 0.25 ns ns mJ ns ns mJ 0.15 2.5 °C/W °C/W 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Part must be heatsunk for high-temp Ices measurement. 3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGR6N170A Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 24 12 VGE = 15V 13V 11V 10 VGE = 15V 20 13V 16 IC - Amperes IC - Amperes 8 9V 6 4 7V 2 11V 12 9V 8 7V 4 5V 0 0 0 2 4 6 8 10 12 0 5 10 15 25 30 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 12 2.0 VGE = 15V 13V 11V VGE = 15V 1.8 VCE(sat) - Normalized 10 IC - Amperes 20 VCE - Volts VCE - Volts 8 9V 6 4 7V I C = 12A I C =6A I C = 3A 1.6 1.4 1.2 1.0 0.8 2 0.6 5V 0.4 0 0 2 4 6 8 10 12 -50 14 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 12 18 TJ = 25ºC 16 10 I 12 C IC - Amperes VCE - Volts 14 = 12A 10 8 6 4 8 TJ = 125ºC 25ºC - 40ºC 6A 2 6 3A 4 0 6 8 10 12 14 16 VGE - Volts © 2010 IXYS CORPORATION, All Rights Reserved 18 20 3.5 4.5 5.5 6.5 VGE - Volts 7.5 8.5 9.5 IXGR6N170A Fig. 8. Gate Charge Fig. 7. Transconductance 16 5 TJ = - 40ºC VCE = 850V 14 I C = 6A 3 25ºC 12 125ºC 10 VGE - Volts g f s - Siemens 4 2 I G = 1mA 8 6 4 1 2 0 0 0 2 4 6 8 10 0 12 2 4 6 IC - Amperes 8 10 12 14 16 18 20 QG - NanoCoulombs Fig. 9. Reverse-Bias Safe Operating Area Fig. 10. Capacitance 1,000 12 Capacitance - PicoFarads IC - Amperes 10 8 6 4 TJ = 125ºC 2 Cies 100 Coes 10 Cres RG = 33Ω dv / dt < 10V / ns 0 200 f = 1 MHz 1 400 600 800 1000 1200 1400 1600 1800 0 5 10 VCE - Volts 15 20 25 30 35 40 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance 10 Z(th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXGR6N170A Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance --- TJ = 125ºC , VGE = 15V VCE = 850V 0.6 C 3 0.6 2.5 0.5 = 12A 0.5 2 0.4 1.5 0.3 I C = 6A 0.2 0.1 30 40 50 60 70 80 90 100 110 3.5 Eoff Eon ---- 3 RG = 33Ω , VGE = 15V VCE = 850V 0.4 2.5 2 TJ = 125ºC, 25ºC E on - MilliJoules I 0.7 Eon - MilliJoules Eo f f - MilliJoules Eon - Eoff 0.7 3.5 E o f f - MilliJoules 0.8 Fig. 13. Inductive Switching Energy Loss vs. Collector Current 0.3 1.5 1 0.2 1 0.5 0.1 0.5 0 120 0 0 6 RG - Ohms 7 8 9 10 11 12 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 2.00 0.7 Eoff Eon 0.6 VCE = 850V ---- 1.75 RG = 33Ω , VGE = 15V 0.5 1.50 1.25 I C = 12A 0.4 1.00 0.3 E on - MilliJoules E o f f - MilliJoules 0.8 0.75 I C = 6A 0.2 0.50 0.1 25 35 45 55 65 75 85 95 105 115 0.25 125 TJ - Degrees Centigrade © 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: G_6N170A(2N)8-12-10-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.