IXGX50N120C3H1

Preliminary Technical Information IXGK50N120C3H1 IXGX50N120C3H1 GenX3TM 1200V IGBTs w/ Diode High-Speed PT IGBTs for 20 - 50 kHz Switching VCES = IC100 = VCE(sat) ≤ tfi(typ) = 1200V 50A 4.2V 64ns TO-264 (IXGK) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM G C E Maximum Ratings 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 IC100 IF110 ICM TC TC TC TC 95 50 58 240 A A A A IA EAS TC = 25°C TC = 25°C 40 750 A mJ SSOA (RBSOA) VGE = 15V, TJ = 125°C, RG = 3Ω Clamped Inductive Load ICM = 100 VCE ≤ VCES A PC TC = 25°C 460 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 20..120/4.5..14.6 Nm/lb.in. N/lb. 10 6 g g = 25°C ( Chip Capability ) = 100°C = 110°C = 25°C, 1ms TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Md FC Mounting Torque ( IXGK ) Mounting Force ( IXGX ) Weight TO-264 PLUS247 Tab PLUS247 (IXGX) G G C G = Gate C = Collector E Tab E = Emitter Tab = Collector Features z z z z z z Optimized for Low Switching Losses Square RBSOA High Avalanche Capability Avalanche Rated Anti-Parallel Ultra Fast Diode International Standard Packages Advantages z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) IC ICES VCE = VCES, VGE = 0V Characteristic Values Min. Typ. Max. = 250μA, VCE = VGE 3.0 Note 1,TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC z = 40A, VGE = 15V, Note 2 TJ = 125°C 2.6 5.0 V 250 14 μA mA z ±100 nA z 4.2 V V z Applications z z z z z © 2012 IXYS CORPORATION, All Rights Reserved High Power Density Low Gate Drive Requirement High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100163A(08/12) IXGK50N120C3H1 IXGX50N120C3H1 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. IC = 40A, VCE = 10V, Note 2 Cies Coes Cres 24 VCE = 25V, VGE = 0V, f = 1MHz Qg Qge 40 S 4250 455 120 pF pF pF 196 nC 24 nC 84 nC 31 36 2.0 123 64 ns ns mJ ns ns IC = 50A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri Eon td(off) tfi Inductive load, TJ = 25°C IC = 40A, VGE = 15V VCE = 0.5 • VCES, RG = 2Ω Note 3 Eoff td(on) tri Eon td(off) tfi Eoff 0.63 Inductive load, TJ = 125°C IC = 40A, VGE = 15V VCE = 0.5 • VCES, RG = 2Ω Note 3 RthJC RthCK TO-264 Outline 1.2 Terminals: 1 = Gate 2,4 = Collector 3 = Emitter mJ 23 37 3.0 170 315 2.1 ns ns mJ ns ns mJ 0.15 0.27 °C/W °C/W PLUS247TM Outline Reverse Diode (SONIC-FRD) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VF IF = 50A, VGE = 0V, Note 1 IRM trr Characteristic Values Min. Typ. Max. 2.1 TJ = 125°C IF = 50A, VGE = 0V, -diF/dt = 2500A/μs, VR = 800V 2.4 2.3 V V 50 A 75 ns RthJC 0.30 °C/W Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. Notes: 1. Part must be heatsunk for high-temp ICES measurement. 2. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 3. Switching times & energy loses may increase for higher VCE(Clamp), TJ or RG. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGK50N120C3H1 IXGX50N120C3H1 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 275 100 VGE = 15V 13V 11V 90 80 225 9V IC - Amperes 60 7V 50 11V 200 70 IC - Amperes VGE = 15V 13V 250 40 30 175 9V 150 125 100 7V 75 20 50 10 25 5V 0 5V 0 0 1 2 3 4 5 6 0 3 6 9 15 18 21 24 27 30 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125ºC 100 1.3 VGE = 15V 13V 11V 90 80 VGE = 15V 1.2 VCE(sat) - Normalized 9V 70 IC - Amperes 12 VCE - Volts VCE - Volts 60 7V 50 40 30 1.1 I C = 100A I C = 50A I C = 25A 1.0 0.9 0.8 0.7 20 5V 10 0.6 0 0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 25 50 75 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 125 150 Fig. 6. Input Admittance 90 8.0 7.5 80 TJ = 25ºC 7.0 70 IC - Amperes 6.5 VCE - Volts 100 TJ - Degrees Centigrade 6.0 I 5.5 C = 100A 5.0 60 50 TJ = 125ºC 25ºC - 40ºC 40 30 4.5 50A 20 4.0 10 3.5 25A 3.0 0 5 6 7 8 9 10 11 VGE - Volts © 2012 IXYS CORPORATION, All Rights Reserved 12 13 14 15 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 7.0 7.5 IXGK50N120C3H1 IXGX50N120C3H1 Fig. 8. Gate Charge Fig. 7. Transconductance 60 16 TJ = - 40ºC I C = 50A 12 25ºC 40 VGE - Volts g f s - Siemens VCE = 600V 14 50 125ºC 30 20 I G = 10mA 10 8 6 4 10 2 0 0 0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140 160 IC - Amperes QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 180 200 10,000 Capacitance - PicoFarads 100 Cies 80 IC - Amperes 1,000 Coes 100 60 40 Cres 20 f = 1 MHz 10 0 5 10 15 20 25 30 35 40 TJ = 125ºC RG = 3Ω dv / dt < 10V / ns 0 200 400 VCE - Volts 600 800 1000 1200 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 IXGK50N120C3H1 IXGX50N120C3H1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 4.0 11 5.5 5.0 VCE = 600V --- TJ = 125ºC , VGE = 15V I C 3.5 9 3.0 8 = 80A 4.0 7 3.5 6 3.0 5 I C = 40A 2.5 3 4 5 6 7 8 9 10 11 12 13 14 VCE = 600V 6 TJ = 125ºC 2.5 5 2.0 4 1.5 3 1 0 20 15 30 40 I C = 80A 500 9 450 8 400 7 350 2.4 6 2.0 5 1.6 4 I C = 40A t f i - Nanoseconds 2.8 80 600 tfi t d(off) - - - - 550 TJ = 125ºC, VGE = 15V 500 VCE = 600V 450 300 400 I 250 C = 40A 350 200 300 I 150 C = 80A 250 1.2 3 0.8 2 100 200 0.4 1 50 150 0 125 0 0.0 25 35 45 55 65 75 85 95 105 115 100 2 3 4 5 6 7 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 260 t d(off) - - - - 240 RG = 2Ω , VGE = 15V 350 250 180 TJ = 125ºC 160 150 140 100 120 TJ = 25ºC 100 0 80 30 40 50 60 IC - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 12 13 14 15 70 80 t d(off) - - - - RG = 2Ω , VGE = 15V 250 170 I C = 40A VCE = 600V 160 200 150 150 I C = 80A 140 100 130 50 120 0 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 110 125 t d(off) - Nanoseconds 200 20 300 t d(off) - Nanoseconds 300 50 11 180 tf i 220 VCE = 600V 200 10 350 t f i - Nanoseconds 400 9 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 450 tfi 8 RG - Ohms TJ - Degrees Centigrade t f i - Nanoseconds 70 t d(off) - Nanoseconds VCE = 600V 10 Eon - MilliJoules Eoff - MilliJoules ---- RG = 2Ω , VGE = 15V 3.2 60 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 4.0 3.6 50 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eon 2 TJ = 25ºC RG - Ohms Eoff 7 RG = 2Ω , VGE = 15V 0.0 2 2 ---- 0.5 3 1.5 Eon 1.0 4 2.0 8 Eoff Eon - MilliJoules 4.5 10 Eoff - MilliJoules Eon - Eoff Eon - MilliJoules Eoff - MilliJoules 6.0 IXGK50N120C3H1 IXGX50N120C3H1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 180 tr i 160 t d(on) - - - - 60 100 55 90 TJ = 125ºC, VGE = 15V C 45 = 80A 100 40 80 35 I C = 40A t r i - Nanoseconds I 28 26 50 24 40 22 30 20 20 18 16 40 25 20 20 10 15 0 3 4 5 6 7 8 9 10 11 12 13 14 15 14 20 RG - Ohms 30 TJ = 125ºC, 25ºC VCE = 600V 60 30 2 32 70 60 0 t d(on) - - - - t d(on) - Nanoseconds 120 tr i RG = 2Ω , VGE = 15V 80 50 VCE = 600V t d(on) - Nanoseconds t r i - Nanoseconds 140 34 30 40 50 60 70 80 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 140 32 tr i 120 t d(on) - - - 30 RG = 2Ω , VGE = 15V t r i - Nanoseconds 100 28 I C = 80A 80 26 60 24 I C = 40A 40 t d(on) - Nanoseconds VCE = 600V 22 20 25 35 45 55 65 75 85 95 105 115 20 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_50N120C3H1(7N)6-19-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.