IXTA10N60P

IXTA10N60P IXTP10N60P PolarTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 600V = 10A Ω ≤ 740mΩ TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 600 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 10 A IDM TC = 25°C, Pulse Width Limited by TJM 25 A IA TC = 25°C 10 A EAS TC = 25°C 500 mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 200 W D (Tab) TO-220AB (IXTP) G G = Gate S = Source -55 ... +150 °C TJM 150 °C Features Tstg -55 ... +150 °C z 300 260 °C °C z 1.13 / 10 Nm/lb.in. 2.5 3.0 g g TJ TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 Seconds Md Mounting Torque (TO-220) Weight TO-263 TO-220 z z z z z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 600 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = ± 30V, VDS = 0V IDSS 5 TJ = 125°C RDS(on) V V ±100 nA VDS = VDSS, VGS = 0V VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 D = Drain Tab = Drain International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG Low RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance μA 50 μA 740 mΩ Easy to Mount Space Savings Applications z z z z z z © 2010 IXYS CORPORATION, All Rights Reserved D (Tab) Advantages z z 5.5 DS DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications DS99330F(04/10) IXTA10N60P IXTP10N60P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 6 VDS = 10V, ID = 0.5 • ID25, Note 1 TO-263 Outline 11 S 1720 pF 160 pF 14 pF 23 ns 27 ns 65 ns tf 21 ns Qg(on) 32 nC 12 nC 10 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) Qgs Resistive Switching Time VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10Ω (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.62 °C/W RthJC RthCH TO-220 °C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 10 A ISM Repetitive, Pulse Width Limited by TJM 30 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 10A, VGS = 0V 500 TO-220 Outline ns -di/dt = 100A/μs, VR = 100V Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. Pins: 1 - Gate 3 - Source 2 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA10N60P IXTP10N60P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 24 10 VGS = 10V VGS = 10V 7V 9 20 8 7V 6V ID - Amperes ID - Amperes 7 6 5 4 6V 12 8 3 2 4 5V 5V 1 0 0 0 1 2 3 4 5 6 7 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = 5A Value vs. Junction Temperature 10 2.6 VGS = 10V 9 2.4 VGS = 10V 2.2 R DS(on) - Normalized 8 6V 7 ID - Amperes 16 6 5 4 5V 3 2.0 I D = 10A 1.8 I D = 5A 1.6 1.4 1.2 1.0 2 0.8 1 0.6 0.4 0 0 1 2 3 4 5 6 7 8 9 10 11 12 -50 13 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 5A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 12 3.0 VGS = 10V 10 TJ = 125ºC 2.2 ID - Amperes R DS(on) - Normalized 2.6 1.8 1.4 8 6 4 TJ = 25ºC 1.0 2 0.6 0 0 5 10 15 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 20 25 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTA10N60P IXTP10N60P Fig. 8. Transconductance Fig. 7. Input Admittance 16 22 TJ = - 40ºC 20 14 18 16 g f s - Siemens ID - Amperes 12 TJ = 125ºC 25ºC - 40ºC 10 8 6 25ºC 14 125ºC 12 10 8 6 4 4 2 2 0 0 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0 6.4 0 2 4 6 VGS - Volts 8 10 12 14 16 ID - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 30 10 9 25 VDS = 300V I D = 5A 8 VGS - Volts IS - Amperes I G = 10mA 7 20 15 6 5 4 TJ = 125ºC 10 3 TJ = 25ºC 2 5 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 5 10 15 VSD - Volts 20 25 30 35 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1 10,000 1,000 Ciss Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz 100 Coss 0.1 10 Crss 1 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXF_10N60P (4J)4-18-10-D Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.