IXTL2X180N10T

Preliminary Technical Information IXTL2x180N10T TrenchTM Power MOSFET Common-Gate Pair VDSS ID25 = = RDS(on) ≤ 100V 2x100A Ω 9mΩ (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 100 100 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 IL(RMS) IDM TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM 100 75 450 A A A IA EAS TC = 25°C TC = 25°C 25 750 A mJ PD TC = 25°C 150 W dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 3 V/ns -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s FC Mounting Force 20..120 /9..27 N/lb. 8 g Weight Features Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z 175°C Operating Temperature z Avalanche Rated z High Current Handling Capability z Fast Intrinsic Rectifier z Low RDS(on) and QG z Advantages z z z High Power Density Easy to Mount Space Savings Applications z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 100 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 50A, Note 1 TJ = 150°C © 2012 IXYS CORPORATION, All Rights Reserved V 4.5 V ± 200 nA 5 250 μA μA z z z z z 9 mΩ z Automotive - Motor Drives - DC/DC Conversion - 42V Power Bus - ABS Systems DC/DC Converters and Off-Line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications Distributed Power Architechtures and VRMs Electronic Valve Train Systems High Voltage Synchronous Recifier DS99752B(05/12) IXTL2x180N10T Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 70 VDS = 10V, ID = 60A, Note 1 Ciss 110 S 6900 pF 923 pF 162 pF 3.0 Ω 33 ns 54 ns 42 ns 31 ns 151 nC 39 nC 45 nC VGS = 0V, VDS = 25V, f = 1MHz Coss Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 25A td(off) RG = 3.3Ω (External) tf Qg(on) VGS = 10V, VDS = 0.5 • VDSS, ID = 25A Qgs ISOPLUS I5-PakTM (IXTL) Outline Qgd 1,5 = Drain 2,4 = Source 3 = Gate 6 = Isolated 1.0 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 180 A ISM Repetitive, Pulse Width Limited by TJM 450 A VSD IF = 50A, VGS = 0V, Note 1 1.0 V trr 60 IF = 25A, VGS = 0V ns -di/dt = 100A/μs, VR = 50V Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.