IXTP14N60PM

IXTP14N60PM PolarHVTM Power MOSFET VDSS ID25 RDS(on) = 600V = 7A Ω ≤ 550mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTP...M) OUTLINE Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ 600 600 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 7 42 A A IA EAS TC = 25°C TC = 25°C 14 900 A mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ =150°C 10 V/ns PD TC = 25°C 75 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 2.5 g TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight G Isolated Tab D S G = Gate S = Source D = Drain Features Plastic overmolded tab for electrical isolation International standard package Avalanche rated Fast Intrinsic Diode Low package inductance Advantages Easy to mount Space savings Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 600 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 7A, Note 1 Applications: V 5.5 V ±100 nA TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved 5 μA 100 μA Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor drives Robotics and servo controls 550 mΩ DS99738F(12/08) IXTP14N60PM Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 20V, ID = 7A, Note 1 7 13 S 2500 pF 215 pF 13 pF Resistive Switching Times 23 ns VGS = 10V, VDS = 0.5 VDSS, ID = 7A 27 ns 70 ns 26 ns 36 nC 16 nC 12 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf RG = 10Ω (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 VDSS, ID = 7A Qgd 1.66 °C/W RthJC Source-Drain Diode ISOLATED TO-220 (IXTP...M) 1 2 3 Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V 14 A ISM Repetitive, pulse width limited by TJM 42 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 14A, -di/dt = 100A/μs, VR = 100V, VGS = 0V 500 ns Notes:1. Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2 %. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTP14N60PM Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 30 14 VGS = 10V 9V 12 24 10 21 ID - Amperes ID - Amperes VGS = 10V 9V 27 8V 8 6 18 8V 15 12 9 4 7V 6 2 3 0 7V 0 0 1 2 3 4 5 6 7 8 0 3 6 9 15 18 21 24 27 30 Fig. 4. RDS(on) Normalized to ID = 7A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 14 3.2 VGS = 10V 8V VGS = 10V 2.8 RDS(on) - Normalized 12 10 ID - Amperes 12 VDS - Volts VDS - Volts 7V 8 6 4 2 2.4 I D = 14A 2.0 I D = 7A 1.6 1.2 0.8 6V 0.4 0 0 2 4 6 8 10 12 14 16 -50 18 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 7A Value vs. Drain Current 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 3.4 8 VGS = 10V 3.0 7 TJ = 125ºC 6 2.6 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 2.2 1.8 1.4 TJ = 25ºC 5 4 3 2 1.0 1 0 0.6 0 3 6 9 12 15 18 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 21 24 27 30 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade IXYS REF: F_14N60P(5J)12-22-08-G IXTP14N60PM Fig. 8. Transconductance Fig. 7. Input Admittance 50 27 45 24 40 21 g f s - Siemens ID - Amperes 35 TJ = 125ºC 25ºC - 40ºC 30 25 20 TJ = - 40ºC 25ºC 125ºC 18 15 12 9 15 6 10 3 5 0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 0 5 10 15 VGS - Volts 20 25 30 35 40 45 50 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 50 10 45 9 VDS = 300V 40 8 I G = 10mA 35 7 VGS - Volts IS - Amperes I D = 7A 30 25 TJ = 125ºC 20 6 5 4 3 15 2 TJ = 25ºC 10 1 5 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 4 8 VSD - Volts 12 16 20 24 28 32 36 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 100 Ciss 1,000 100 ID - Amperes Capacitance - PicoFarads RDS(on) Limit Coss 25µs 10 100µs 1ms 10ms 1 10 TJ = 150ºC Crss DC TC = 25ºC f = 1 MHz Single Pulse 1 0 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 VDS - Volts 1000 IXTP14N60PM Fig. 13. Maximum Transient Thermal Impedance 10.00 Z (th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2008 IXYS CORPORATION, All rights reserved IXYS REF: F_14N60P(5J)12-22-08-G Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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