IXTP160N10T

Preliminary Technical Information IXTA160N10T IXTP160N10T TrenchTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated = 100V = 160A   7.0m TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 100 V VDGR TJ = 25C to 175C, RGS = 1M 100 V VGSS VGSM Continuous Transient  20  30 V V ID25 IL(RMS) IDM TC = 25C (Chip Capability) Lead Current Limit, RMS TC = 25C, Pulse Width Limited by TJM 160 120 430 A A A IA TC = 25C 25 A EAS TC = 25C 500 mJ dV/dt IS  IDM, VDD  VDSS,TJ  175C 3 V/ns PD TC = 25C 430 W TO-220 (IXTP) G D S G = Gate S = Source   C  TJM 175  C  Tstg -55 ... +175  C TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220) Weight TO-263 TO-220 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 g g D = Drain Tab = Drain Features -55 ... +175 TJ D (Tab)   Ultra-Low On Resistance Avalanche Rated Low Package Inductance - Easy to Drive and to Protect 175C Operating Temperature Fast Intrinsic Diode Advantages    Easy to Mount Space Savings High Power Density Applications Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 100 VGS(th) VDS = VGS, ID = 250A 2.5 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V V 4.5 V             200 nA 5 A 250  A TJ = 150C RDS(on)  VGS = 10V, ID = 25A, Notes 1& 2 6.1 7.0 m       © 2018 IXYS CORPORATION, All rights reserved Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems Distributed Power Architechtures and VRMs Electronic Valve Train Systems High Current Switching Applications High Voltage Synchronous Recifier DS99650A(11/18) IXTA160N10T IXTP160N10T Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 65 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 25A RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 25A Qgd E 102 S 6600 pF 880 pF 135 pF 33 ns 61 ns 49 ns 42 ns 132 nC 37 nC 40 nC C2 A E1 L1 D1 D 1 2 L2 3 b b2 A1 4 H L3 c e 0.43 [11.0] e 0 0.34 [8.7] 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 0.20 [5.0] 0.10 [2.5] 0.12 [3.0] 0.06 [1.6] 0.35C/W RthJC RthCH TO-263 Outline TO-220 0.50  C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 160 A ISM Repetitive, Pulse Width Limited by TJM 430 A VSD IF = 25A, VGS = 0V, Note 1 1.0 V trr IF = 25A, VGS = 0V 60 TO-220 Outline E A oP ns A1 H1 Q D2 D -di/dt = 100A/s, VR = 50V D1 E1 A2 EJECTOR PIN L1 L Notes: 1. Pulse test, t  300s; duty cycle, d  2%. e 3X b c e1 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. 3X b2 1 - Gate 2,4 - Drain 3 - Source PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA160N10T IXTP160N10T Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 160 VGS = 10V 9V 8V 140 120 8V 200 I D - Amperes 7V I D - Amperes VGS = 10V 9V 250 100 80 60 6V 7V 150 100 40 6V 50 20 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 0 1 2 3 160 6 7 8 3.0 VGS = 10V 8V 140 VGS = 10V 2.6 120 7V RDS(on) - Normalized I D - Amperes 5 Fig. 4. RDS(on) Normalized to ID = 160A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 150oC 100 80 6V 60 40 20 2.2 I D = 160A I D = 80A 1.8 1.4 1.0 0.6 5V 0 0.2 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 80A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 140 3.4 VGS = 10V 15V 3.0 120 o External Lead Current Limit TJ = 175 C 100 2.6 I D - Amperes RDS(on) - Normalized 4 VDS - Volts VDS - Volts 2.2 1.8 1.4 80 60 40 o TJ = 25 C 20 1.0 0 0.6 0 50 100 150 200 I D - Amperes © 2018 IXYS CORPORATION, All rights reserved 250 300 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 175 IXTA160N10T IXTP160N10T Fig. 7. Input Admittance Fig. 8. Transconductance 200 140 180 o 120 TJ = - 40 C 100 25 C 160 g f s - Siemens I D - Amperes 140 120 100 80 o TJ = 150 C o 25 C o - 40 C 60 40 o 80 o 150 C 60 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 50 100 VGS - Volts 200 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 300 VDS = 50V 9 250 I D = 25A 8 I G = 10mA 7 200 VGS - Volts I S - Amperes 150 I D - Amperes 150 o TJ = 150 C 100 6 5 4 3 o TJ = 25 C 2 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 0 20 40 VSD - Volts 80 100 120 140 Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1 10,000 Ciss f = 1 MHz Z(th)JC - K / W Capacitance - PicoFarads 60 QG - NanoCoulombs Coss 1,000 0.1 Crss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTA160N10T IXTP160N10T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 90 75 RG = 5 VGS = 10V 80 70 VDS = 50V t r - Nanoseconds t r - Nanoseconds 65 70 60 50 I D = 50A 40 60 55 RG = 5 VGS = 10V 50 VDS = 50V 45 o 40 I D = 25A 30 o TJ = 25 C TJ = 125 C 35 20 30 25 35 45 55 65 75 85 95 105 115 125 25 30 35 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 65 60 o TJ = 125 C, VGS = 10V 110 50 I D = 25A 90 45 70 40 50 35 110 VDS = 50V I D = 25A 70 100 I D = 50A 60 90 50 80 I D = 25A 40 t d ( o f f ) - Nanoseconds 55 I D = 50A td(off) RG = 5, VGS = 10V 80 t d ( o n ) - Nanoseconds VDS = 50V t r - Nanoseconds 120 tf 130 50 90 td(on) t f - Nanoseconds 150 45 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 170 tr 40 I D - Amperes 70 I D = 50A 30 6 8 10 12 14 16 18 25 20 45 55 65 75 85 95 105 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance tf RG = 5, VGS = 10V o TJ = 125 C 41 62 o 40 56 TJ = 125 C 39 o TJ = 25 C 38 30 35 40 I D - Amperes © 2018 IXYS CORPORATION, All rights reserved 45 50 o 190 VDS = 50V I D = 25A 110 160 I D = 50A 90 130 70 100 50 50 70 44 30 t d ( o f f ) - Nanoseconds 68 o TJ = 25 C t d ( o f f ) - Nanoseconds 42 td(off) TJ = 125 C, VGS = 10V 130 74 VDS = 50V 60 125 220 td(off) t f - Nanoseconds 43 115 150 80 tf 25 35 RG - Ohms 44 t f - Nanoseconds 30 30 4 40 4 6 8 10 12 14 16 18 20 RG - Ohms IXYS REF: T_160N10T (5V)11-16-06-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.